Hervé Blanck

17 papers Journal 15Unranked 2
YearRankTypeTitle / Venue / Authors
2022 — conf
Deep level effects and degradation of 0.15 μm RF AlGaN/GaN HEMTs with Mono-layer and Bi-layer AlGaN backbarrier.
IRPS
Zhan Gao, Francesca Chiocchetta, Carlo De Santi, Nicola Modolo, Fabiana Rampazzo, Matteo Meneghini, Gaudenzio Meneghesso, Enrico Zanoni, Hervé Blanck, H. Stieglauer, D. Sommer, Benoit Lambert, Jan Grünenpütt, O. Kordina, J.-T. Chen, J.-C. Jacquet, Cedric Lacam, S. Piotrowicz
2022 — conf
GaN RF HEMT Reliability: Impact of Device Processing on I-V Curve Stability and Current Collapse.
IRPS
Francesca Chiocchetta, Carlo De Santi, Fabiana Rampazzo, Kalparupa Mukherjee, Jan Grünenpütt, Daniel Sommer, Hervé Blanck, Benoit Lambert, Andrea Gerosa, Gaudenzio Meneghesso, Enrico Zanoni, Matteo Meneghini
2018 J jnl
On-wafer RF stress and trapping kinetics of Fe-doped AlGaN/GaN HEMTs.
Microelectron. Reliab.
Mehdi Rzin, Alessandro Chini, Carlo De Santi, Matteo Meneghini, A. Hugger, Marc Hollmer, H. Stieglauer, M. Madel, J. Splettstößer, Daniel Sommer, Jan Grünenpütt, K. Beilenhoff, Hervé Blanck, J.-T. Chen, O. Kordina, Gaudenzio Meneghesso, Enrico Zanoni
2017 J jnl
High resolution physical analysis of ohmic contact formation at GaN-HEMT devices.
Microelectron. Reliab.
Andreas Graff, Michél Simon-Najasek, Frank Altmann, Ján Kuzmík, Dagmar Gregusová, S. Hascik, Helmut Jung, T. Baur, Jan Grünenpütt, Hervé Blanck
2016 J jnl
Correlation of gate leakage and local strain distribution in GaN/AlGaN HEMT structures.
Microelectron. Reliab.
Mikael Broas, Andreas Graff, Michél Simon-Najasek, David Poppitz, Frank Altmann, Helmut Jung, Hervé Blanck
2015 J jnl
Study of hot electrons in AlGaN/GaN HEMTs under RF Class B and Class J operation using electroluminescence.
Microelectron. Reliab.
Tommaso Brazzini, Michael A. Casbon, Huarui Sun, Michael J. Uren, Jonathan Lees, Paul J. Tasker, Helmut Jung, Hervé Blanck, Martin Kuball
2014 J jnl
Failure signatures on 0.25 μm GaN HEMTs for high-power RF applications.
Microelectron. Reliab.
Antonio Stocco, Stefano Dalcanale, Fabiana Rampazzo, Matteo Meneghini, Gaudenzio Meneghesso, Jan Grünenpütt, Benoit Lambert, Hervé Blanck, Enrico Zanoni
2014 J jnl
Proton induced trapping effect on space compatible GaN HEMTs.
Microelectron. Reliab.
Antonio Stocco, Simone Gerardin, Davide Bisi, Stefano Dalcanale, Fabiana Rampazzo, Matteo Meneghini, Gaudenzio Meneghesso, Jan Grünenpütt, Benoit Lambert, Hervé Blanck, Enrico Zanoni
2013 J jnl
Analysis of Schottky gate degradation evolution in AlGaN/GaN HEMTs during HTRB stress.
Microelectron. Reliab.
Laurent Brunel, Benoit Lambert, P. Mezenge, J. Bataille, D. Floriot, Jan Grünenpütt, Hervé Blanck, D. Carisetti, Y. Gourdel, Nathalie Malbert, Arnaud Curutchet, Nathalie Labat
2013 J jnl
Qualification of 50 V GaN on SiC technology for RF power amplifiers.
Microelectron. Reliab.
P. J. van der Wel, T. Rödle, Benoit Lambert, Hervé Blanck, Maximilian Dammann
2012 J jnl
Improved thermal management for GaN power electronics: Silver diamond composite packages.
Microelectron. Reliab.
Mustapha Faqir, Tim Batten, T. Mrotzek, S. Knippscheer, M. Massiot, M. Buchta, Hervé Blanck, Stéphane Rochette, Olivier Vendier, Martin Kuball
2012 J jnl
Reliability data's of 0.5 μm AlGaN/GaN on SiC technology qualification.
Microelectron. Reliab.
Benoit Lambert, Jim Thorpe, Reza Behtash, Bernd Schauwecker, Franck Bourgeois, Helmut Jung, Joëlle Bataille, Patrick Mezenge, Cyril Gourdon, Catherine Ollivier, Didier Floriot, Hervé Blanck
2012 J jnl
Reliability studies on GaN HEMTs with sputtered Iridium gate module.
Microelectron. Reliab.
Richard Lossy, Hervé Blanck, Joachim Würfl
2010 J jnl
Reliability of high voltage/high power L/S-band Hbt technology.
Microelectron. Reliab.
Benoit Lambert, G. Jonsson, J. Bataille, C. Ollivier, P. Mezenge, H. Derewonko, H. Thomas, D. Floriot, Hervé Blanck, C. Moreau
2008 J jnl
GaAs Industry in Europe - Technologies, Trends and New Developments.
IEICE Trans. Electron.
Helmut Jung, Hervé Blanck, Wolfgang Bösch, Jim Mayock
2002 J jnl
Exploring the limits of Arrhenius-based life testing with heterojunction bipolar transistor technology.
Microelectron. Reliab.
R. Petersen, Ward De Ceuninck, Jan D'Haen, Marc D'Olieslaeger, Luc De Schepper, Olivier Vendier, Hervé Blanck, Dominique Pons
2001 J jnl
Determination of the thermal resistance and current exponent of heterojunction bipolar transistors for reliability evaluation.
Microelectron. Reliab.
R. Petersen, Ward De Ceuninck, Luc De Schepper, Olivier Vendier, Hervé Blanck, Dominique Pons