Heiner Ryssel

11 papers Journal 11
YearRankTypeTitle / Venue / Authors
2013 J jnl
Conduction mechanisms in thermal nitride and dry gate oxides grown on 4H-SiC.
Microelectron. Reliab.
Zahir Ouennoughi, C. Strenger, F. Bourouba, V. Haeublein, Heiner Ryssel, Lothar Frey
2011 J jnl
Investigation of the reliability of 4H-SiC MOS devices for high temperature applications.
Microelectron. Reliab.
Martin Le-Huu, Holger Schmitt, Stefan Noll, Michael Grieb, Frederik F. Schrey, Anton J. Bauer, Lothar Frey, Heiner Ryssel
2007 J jnl
Quantitative oxide charge determination by photocurrent analysis.
Microelectron. Reliab.
Mathias Rommel, Anton J. Bauer, Heiner Ryssel
2005 J jnl
Electrical properties of hafnium silicate films obtained from a single-source MOCVD precursor.
Microelectron. Reliab.
Martin Lemberger, Albena Paskaleva, Stefan Zürcher, Anton J. Bauer, Lothar Frey, Heiner Ryssel
2003 J jnl
Electrical characterization of zirconium silicate films obtained from novel MOCVD precursors.
Microelectron. Reliab.
Albena Paskaleva, Martin Lemberger, Stefan Zürcher, Anton J. Bauer, Lothar Frey, Heiner Ryssel
2001 J jnl
Electrical reliability aspects of through the gate implanted MOS structures with thin oxides.
Microelectron. Reliab.
Michael P. M. Jank, Martin Lemberger, Anton J. Bauer, Lothar Frey, Heiner Ryssel
2001 J jnl
Reliability of ultrathin nitrided oxides grown in low pressure N
Microelectron. Reliab.
Matthias Beichele, Anton J. Bauer, Heiner Ryssel
2001 J jnl
Suppression of boron penetration through thin gate oxides by nitrogen implantation into the gate electrode in PMOS devices.
Microelectron. Reliab.
S. Strobel, Anton J. Bauer, Matthias Beichele, Heiner Ryssel
1998 J jnl
Monte Carlo simulation of silicon amorphization during ion implantation.
IEEE Trans. Comput. Aided Des. Integr. Circuits Syst.
Walter Bohmayr, Alexander Burenkov, Jürgen Lorenz, Heiner Ryssel, Siegfried Selberherr
1990 J jnl
Simulation of silicon semiconductor processing.
Eur. Trans. Telecommun.
Peter Pichler, Heiner Ryssel
1985 J jnl
COMPOSITE -- A Complete Modeling Program of Silicon Technology.
IEEE Trans. Comput. Aided Des. Integr. Circuits Syst.
Jürgen Lorenz, Joachim Pelka, Heiner Ryssel, Albert Sachs, Albert Seidl, Milos Svoboda