Hassan Afzali-Kusha

13 papers A* 1Journal 5Unranked 6
YearRankTypeTitle / Venue / Authors
2023 J jnl
X-NVDLA: Runtime Accuracy Configurable NVDLA Based on Applying Voltage Overscaling to Computing and Memory Units.
IEEE Trans. Circuits Syst. I Regul. Pap.
Hassan Afzali-Kusha, Massoud Pedram
2022 — ch.
Design Techniques for Approximate Realization of Data-Flow Graphs.
Approximate Computing
Marzieh Vaeztourshizi, Hassan Afzali-Kusha, Mehdi Kamal, Massoud Pedram
2022 — conf
X-NVDLA: Runtime Accuracy Configurable NVDLA based on Employing Voltage Overscaling Approach.
ISQED
Hassan Afzali-Kusha, Massoud Pedram
2020 J jnl
Design Exploration of Energy-Efficient Accuracy-Configurable Dadda Multipliers With Improved Lifetime Based on Voltage Overscaling.
IEEE Trans. Very Large Scale Integr. Syst.
Hassan Afzali-Kusha, Marzieh Vaeztourshizi, Mehdi Kamal, Massoud Pedram
2020 — conf
Low-power Accuracy-configurable Carry Look-ahead Adder Based on Voltage Overscaling Technique.
ISQED
Hassan Afzali-Kusha, Mehdi Kamal, Massoud Pedram
2018 — conf
A 125mV 2ns-access-time 16Kb SRAM design based on a 6T hybrid TFET-FinFET cell.
ISQED
Hassan Afzali-Kusha, Alireza Shafaei, Massoud Pedram
2018 — conf
Energy Consumption and Lifetime Improvement of Coarse-Grained Reconfigurable Architectures Targeting Low-Power Error-Tolerant Applications.
ACM Great Lakes Symposium on VLSI
Hassan Afzali-Kusha, Omid Akbari, Mehdi Kamal, Massoud Pedram
2018 J jnl
Energy and Reliability Improvement of Voltage-Based, Clustered, Coarse-Grain Reconfigurable Architectures by Employing Quality-Aware Mapping.
IEEE J. Emerg. Sel. Topics Circuits Syst.
Hassan Afzali-Kusha, Omid Akbari, Mehdi Kamal, Massoud Pedram
2016 A* conf
Minimizing the energy-delay product of SRAM arrays using a device-circuit-architecture co-optimization framework.
DAC
Alireza Shafaei, Hassan Afzali-Kusha, Massoud Pedram
2016 — conf
Optimizing the Operating Voltage of Tunnel FET-Based SRAM Arrays Equipped with Read/Write Assist Circuitry.
ACM Great Lakes Symposium on VLSI
Hassan Afzali-Kusha, Alireza Shafaei, Massoud Pedram
2015 J jnl
A near-threshold 7T SRAM cell with high write and read margins and low write time for sub-20 nm FinFET technologies.
Integr.
Mohammad Ansari, Hassan Afzali-Kusha, Behzad Ebrahimi, Zainalabedin Navabi, Ali Afzali-Kusha, Massoud Pedram
2015 — conf
High-performance and high-yield 5 nm underlapped FinFET SRAM design using P-type access transistors.
ISQED
Roohollah Yarmand, Behzad Ebrahimi, Hassan Afzali-Kusha, Ali Afzali-Kusha, Massoud Pedram
2015 J jnl
Workload and temperature dependent evaluation of BTI-induced lifetime degradation in digital circuits.
Microelectron. Reliab.
Behzad Eghbalkhah, Mehdi Kamal, Hassan Afzali-Kusha, Ali Afzali-Kusha, M. B. Ghaznavi-Ghoushchi, Massoud Pedram