Hans Reisinger

17 papers Journal 5Unranked 12
YearRankTypeTitle / Venue / Authors
2024 — conf
A Recombination-Enhanced-Defect-Reaction-Based Model for the Gate Switching Instability in SiC MOSFETs.
IRPS
Tibor Grasser, Maximilian W. Feil, Katja Waschneck, Hans Reisinger, Judith Berens, Dominic Waldhör, A. Vasilev, Michael Waltl, Thomas Aichinger, M. Bockstedte, Wolfgang Gustin, Gregor Pobegen
2023 — conf
Modeling of NBTI Induced Threshold Voltage Shift Based on Activation Energy Maps Under Consideration of Variability.
IRPS
Christian Bogner, Christian Schlünder, Michael Waltl, Hans Reisinger, Tibor Grasser
2023 — conf
Towards Understanding the Physics of Gate Switching Instability in Silicon Carbide MOSFETs.
IRPS
Maximilian W. Feil, Katja Waschneck, Hans Reisinger, Judith Berens, Thomas Aichinger, Paul Salmen, Gerald Rescher, Wolfgang Gustin, Tibor Grasser
2022 — conf
Efficient Evaluation of the Time-Dependent Threshold Voltage Distribution Due to NBTI Stress Using Transistor Arrays.
IRPS
Christian Bogner, Tibor Grasser, Michael Waltl, Hans Reisinger, Christian Schlünder
2022 — conf
Optical Emission Correlated to Bias Temperature Instability in SiC MOSFETs.
IRPS
Maximilian W. Feil, Hans Reisinger, André Kabakow, Thomas Aichinger, Wolfgang Gustin, Tibor Grasser
2021 — conf
A new test procedure to realistically estimate end-of-life electrical parameter stability of SiC MOSFETs in switching operation.
IRPS
Paul Salmen, Maximilian W. Feil, Katja Waschneck, Hans Reisinger, Gerald Rescher, Thomas Aichinger
2020 — conf
Influence of high-voltage gate-oxide pulses on the BTI behavior of SiC MOSFETs.
IRPS
Sebastian Maaß, Hans Reisinger, Thomas Aichinger, Gerald Rescher
2019 — conf
From Device Aging Physics to Automated Circuit Reliability Sign Off.
IRPS
Christian Schlünder, Katja Waschneck, Peter Rotter, Susanne Lachenmann, Hans Reisinger, Franz Ungar, Georg Georgakos
2018 — conf
Characterization and physical modeling of the temporal evolution of near-interfacial states resulting from NBTI/PBTI stress in nMOS/pMOS transistors.
IRPS
Tibor Grasser, Bernhard Stampfer, Michael Waltl, Gerhard Rzepa, Karl Rupp, Franz Schanovsky, Gregor Pobegen, Katja Puschkarsky, Hans Reisinger, Barry J. O'Sullivan, Ben Kaczer
2018 — conf
Fast acquisition of activation energy maps using temperature ramps for lifetime modeling of BTI.
ESSDERC
Katja Puschkarsky, Hans Reisinger, Christian Schlünder, Wolfgang Gustin, Tibor Grasser
2018 J jnl
NBTI: Experimental investigation, physical modelling, circuit aging simulations and verification.
Microelectron. Reliab.
Christian Schlünder, Katja Puschkarsky, Gunnar Andreas Rott, Wolfgang Gustin, Hans Reisinger
2018 — conf
Understanding and modeling transient threshold voltage instabilities in SiC MOSFETs.
IRPS
Katja Puschkarsky, Tibor Grasser, Thomas Aichinger, Wolfgang Gustin, Hans Reisinger
2016 J jnl
Degradation and recovery of variability due to BTI.
Microelectron. Reliab.
Christian Schlünder, Jörg Berthold, Fabian Proebster, Andreas Martin, Wolfgang Gustin, Hans Reisinger
2014 — conf
Characterization and modeling of charge trapping: From single defects to devices.
ICICDT
Tibor Grasser, Gerhard Rzepa, Michael Waltl, Wolfgang Goes, Karina Rott, Gunnar Andreas Rott, Hans Reisinger, Jacopo Franco, Ben Kaczer
2014 J jnl
Mixture of negative bias temperature instability and hot-carrier driven threshold voltage degradation of 130 nm technology p-channel transistors.
Microelectron. Reliab.
Gunnar Andreas Rott, Karina Rott, Hans Reisinger, Wolfgang Gustin, Tibor Grasser
2012 J jnl
New insights on the PBTI phenomena in SiON pMOSFETs.
Microelectron. Reliab.
Karina Rott, Hans Reisinger, Stefano Aresu, Christian Schlünder, Klaus Kölpin, Wolfgang Gustin, Tibor Grasser
2009 J jnl
On the temperature and voltage dependence of short-term negative bias temperature stress.
Microelectron. Reliab.
Philipp Hehenberger, Paul-Jürgen Wagner, Hans Reisinger, Tibor Grasser