Hangbing Lv

20 papers Journal 10Unranked 9
YearRankTypeTitle / Venue / Authors
2026 — conf
A 1.2GHz 12.77GB/s/mm
ISSCC
Yue Cao, Jinghao Jiang, Haijun Jiang, Qian Zhang, Xuanzhi Liu, Jinhui Cheng, Zhongze Han, Xiping Jiang, Fengguo Zuo, Song Wang, Fujun Bai, Yixin Guo, Chunmeng Dou, Jianguo Yang, Hangbing Lv, Qi Liu, Ming Liu
2024 J jnl
A 9-Mb HZO-Based Embedded FeRAM With 10-Cycle Endurance and 5/7-ns Read/Write Using ECC-Assisted Data Refresh and Offset-Canceled Sense Amplifier.
IEEE J. Solid State Circuits
Qiqiao Wu, Yue Cao, Qing Luo, Haijun Jiang, Zhongze Han, Yongkang Han, Chunmeng Dou, Hangbing Lv, Qi Liu, Jianguo Yang, Ming Liu
2023 — conf
A 9Mb HZO-Based Embedded FeRAM with 10
ISSCC
Jianguo Yang, Qing Luo, Xiaoyong Xue, Haijun Jiang, Qiqiao Wu, Zhongze Han, Yue Cao, Yongkang Han, Chunmeng Dou, Hangbing Lv, Qi Liu, Ming Liu
2023 J jnl
A Hf0.5Zr0.5O2 ferroelectric capacitor-based half-destructive read scheme for computing-in-memory.
Sci. China Inf. Sci.
Yulin Zhao, Yuan Wang, Donglin Zhang, Zhongze Han, Qiao Hu, Xuanzhi Liu, Qingting Ding, Jinhui Cheng, WenJun Zhang, Yue Cao, Ruixi Zhou, Qing Luo, Jianguo Yang, Hangbing Lv
2023 J jnl
Ultralow-Power Compact Artificial Synapse Based on a Ferroelectric Fin Field-Effect Transistor for Spatiotemporal Information Processing.
Adv. Intell. Syst.
Zhaohao Zhang, Guohui Zhan, Weizhuo Gan, Yan Cheng, Xumeng Zhang, Yue Peng, Jianshi Tang, Fan Zhang, Jiali Huo, Gaobo Xu, Qingzhu Zhang, Zhenhua Wu, Yan Liu, Hangbing Lv, Qi Liu, Genquan Han, Huaxiang Yin, Jun Luo, Wenwu Wang
2022 J jnl
A 28 nm 512 Kb adjacent 2T2R RRAM PUF with interleaved cell mirroring and self-adaptive splitting for high density and low BER cryptographic key in IoT devices.
Microelectron. J.
Jianguo Yang, Ruijun Lin, Keji Zhou, Yuejun Zhang, Xiaoyong Xue, Hangbing Lv
2021 — conf
24.2 A 14nm-FinFET 1Mb Embedded 1T1R RRAM with a 0.022µ m
ISSCC
Jianguo Yang, Xiaoyong Xue, Xiaoxin Xu, Qiao Wang, Haijun Jiang, Jie Yu, Danian Dong, Feng Zhang, Hangbing Lv, Ming Liu
2021 J jnl
High-Density 3-D Stackable Crossbar 2D2R nvTCAM With Low-Power Intelligent Search for Fast Packet Forwarding in 5G Applications.
IEEE J. Solid State Circuits
Keji Zhou, Xiaoyong Xue, Jianguo Yang, Xiaoxin Xu, Hangbing Lv, Ming-e Jing, Jing Li, Xiaoyang Zeng, Ming Liu
2021 J jnl
Investigation of weight updating modes on oxide-based resistive switching memory synapse towards neuromorphic computing applications.
Sci. China Inf. Sci.
Qingting Ding, Tiancheng Gong, Jie Yu, Xiaoxin Xu, Xiaoyan Li, Hangbing Lv, Jianguo Yang, Qing Luo, Peng Yuan, Feng Zhang, Ming Liu
2021 — conf
Scaling Potential Analysis for the CMOS Compatible Ox-RRAM.
IMW
Xiaoxin Xu, Wenxuan Sun, Jie Yu, Jinru Lai, Danian Dong, Hangbing Lv
2020 — conf
A 28nm 1.5Mb Embedded 1T2R RRAM with 14.8 Mb/mm
VLSI Circuits
Jianguo Yang, Xiaoyong Xue, Xiaoxin Xu, Hangbing Lv, Feng Zhang, Xiaoyang Zeng, Meng-Fan Chang, Ming Liu
2020 J jnl
A Low Power 4T2C nvSRAM With Dynamic Current Compensation Operation Scheme.
IEEE Trans. Very Large Scale Integr. Syst.
Chao Liu, Jianguo Yang, Pengfei Jiang, Qiao Wang, Donglin Zhang, Tiancheng Gong, Qingting Ding, Yuling Zhao, Qing Luo, Xiaoyong Xue, Hangbing Lv, Ming Liu
2020 J jnl
Ion-Gated Transistor: An Enabler for Sensing and Computing Integration.
Adv. Intell. Syst.
Xianbao Bu, Han Xu, Dashan Shang, Yue Li, Hangbing Lv, Qi Liu
2019 J jnl
A 0.75 V reference clamping sense amplifier for low-power high-density ReRAM with dynamic pre-charge technique.
IEICE Electron. Express
Jiahao Yin, Chunmeng Dou, Danian Dong, Jie Yu, Xiaoxin Xu, Qing Luo, Tiancheng Gong, Lu Tai, Peng Yuan, Xiaoyong Xue, Ming Liu, Hangbing Lv
2019 — conf
A 28nm 512Kb adjacent 2T2R RRAM PUF with interleaved cell mirroring and self-adaptive splitting for extremely low bit error rate of cryptographic key.
A-SSCC
Xiaoyong Xue, Jianguo Yang, Yuejun Zhang, Mingyu Wang, Hangbing Lv, Xiaoyang Zeng, Ming Liu
2019 — conf
A High Reliability 500 µW Resistance-to-Digital Interface Circuit for SnO2 Gas Sensor IoT Applications.
ASICON
Jianguo Yang, Xiaowen Li, Qingting Ding, Xiaoyong Xue, Xiaoxin Xu, Qing Luo, Hangbing Lv, Ming Liu
2019 — ch.
Resistive Switching Devices: Mechanism, Performance and Integration.
Handbook of Memristor Networks
Ming Liu, Qi Liu, Hangbing Lv, Shibing Long
2018 — conf
Nonvolatile Crossbar 2D2R TCAM with Cell Size of 16.3 F
A-SSCC
Keji Zhou, Xiaoyong Xue, Jianguo Yang, Xiaoxin Xu, Hangbing Lv, Mingyu Wang, Ming-e Jing, Wenjun Liu, Xiaoyang Zeng, Steve S. Chung, Jing Li, Ming Liu
2017 — conf
A 0.13μm 64Mb HfOx ReRAM using configurable ramped voltage write and low read-disturb sensing techniques for reliability improvement.
CICC
Xiaowei Han, Qian Jia, Hongbin Sun, Longfei Wang, Huaqiang Wu, Yimao Cai, Feng Zhang, Yongyi Xie, Fangxu Dong, Xiaoguang Wang, Xiaofei Xue, Li Pang, Xiaoqing Zhao, Mengnan Wu, Pu Bai, Qi Liu, Hangbing Lv, Bing Yu, Chao Zhao, He Qian, Ru Huang, Ming Liu, Yumei Zhou, Nanning Zheng, Qiwei Ren
2006 J jnl
Electronic properties of GST for non-volatile memory.
Microelectron. J.
Hangbing Lv, Peng Zhou, Yinyin Lin, Tingao Tang, Baowei Qiao, Yunfeng Lai, Jie Feng, Bingchu Cai, Bomy Chen