Haimeng Huang

13 papers Journal 8Unranked 5
YearRankTypeTitle / Venue / Authors
2026 J jnl
A Novel 2.7 kV 3C-SiC/Ga2O3 Hetero-Channel E-mode MISFET With BFOM up to 5.17 GW/cm2.
Microelectron. J.
Bo Yi, Junfeng Duan, Shengnan Zhu, Wenbo Luo, Junji Cheng, Haimeng Huang, Hongqiang Yang
2025 J jnl
Design and Process Analysis of a Split-Gate Trench Power MOSFET With Bottom-Trench High-k Pillar Superjunction for Enhanced Performance.
IEEE Access
Yunteng Jiang, Zhentao Xiao, Zonghao Zhang, Junchen Zhang, Chenxing Wang, Wenjun Li, Haimeng Huang, Aynul Islam, Hongqiang Yang
2025 J jnl
Taylor modeling and comparative research containing aspect-ratio dependent optimization of three-dimensional Hk superjunction MOSFETs.
Microelectron. J.
Haimeng Huang, Zhentao Xiao, Zonghao Zhang, Chenxing Wang, Hongqiang Yang
2023 — conf
Comprehensive Comparison of Temperature Performances for SiC Trench MOSFET with Integrated Side-wall Schottky Diode and Heterojunction.
ASICON
Bo Yi, Haimeng Huang, Haoran Hu, Moufu Kong, Yilin Guo, Wenkun Shi, Junji Cheng, Hongqiang Yang
2023 J jnl
Modeling and simulation of an insulated-gate HEMT using p-SnO
Microelectron. J.
Bo Yi, Yi Xu, LiTian Zheng, Junji Cheng, Haimeng Huang, Moufu Kong, Hongqiang Yang
2023 — conf
Temperature Dependent Optimization for Specific On-Resistance for 900 V Superjunction MOSFETs: Numerical Calculation and Comparison.
ASICON
Zonghao Zhang, Xi Wang, Keqiang Ma, Siliang Wang, Chenxing Wang, Haoyang Zhou, Haimeng Huang, Junji Cheng, Bo Yi, Hongqiang Yang
2021 — conf
A Vertical Thin Layer pLDMOS with Linear doping realizing ultralow Ron, sp.
ASICON
Bo Yi, Zheng Wu, Junji Cheng, Haimeng Huang, Moufu Kong, Hongqiang Yang
2021 — conf
A split-gate SiC trench MOSFET with embedded unipolar diode for improved performances.
ASICON
Zheng Wu, Chao Xia, Bo Yi, Junji Cheng, Haimeng Huang, Moufu Kong, Hongqiang Yang, Wenkun Shi
2020 J jnl
Lateral Power Fin MOSFET With a High-k Passivation for Ultra-Low On-Resistance.
IEEE Access
Junji Cheng, Jingjie Lin, Weizhen Chen, Shiying Wu, Haimeng Huang, Bo Yi
2020 J jnl
Simulation study of an ultra-low specific on-resistance high-voltage pLDMOS with self-biased accumulation layer.
IEICE Electron. Express
Bo Yi, Yi Feng Peng, Qing Zhao, Moufu Kong, Junji Cheng, Haimeng Huang
2019 J jnl
Analytical Models of Breakdown Voltage and Specific On-Resistance for Vertical GaN Unipolar Devices.
IEEE Access
Haimeng Huang, Jun Huang, Huan Hu, Junji Cheng, Bo Yi
2019 J jnl
SiC trench MOSFET with integrated side-wall Schottky barrier diode having P
IEICE Electron. Express
Bo Yi, Hao Hu, Jia Lin, Junji Cheng, Haimeng Huang, Moufu Kong
2011 — conf
An analytical model for SOI triple RESURF devices.
ASICON
Haimeng Huang, Yongwei Wang, Xingbi Chen