Hadis Morkoç

15 papers Journal 15
YearRankTypeTitle / Venue / Authors
2012 J jnl
Window for better reliability of nitride heterostructure field effect transistors.
Microelectron. Reliab.
Arvydas Matulionis, Juozapas Liberis, Emilis Sermuksnis, Linas Ardaravicius, Artur Simukovic, Cemil Kayis, Congyong Zhu, Romualdo Ferreyra, Vitaliy Avrutin, Ümit Özgür, Hadis Morkoç
2010 J jnl
Bulk ZnO: Current Status, Challenges, and Prospects.
Proc. IEEE
Vitaliy Avrutin, Gene Cantwell, Jizhi Zhang, J. J. Song, Donald J. Silversmith, Hadis Morkoç
2010 J jnl
Challenges and Opportunities in GaN and ZnO Devices and Materials.
Proc. IEEE
Hadis Morkoç, Jen-Inn Chyi, Alois Krost, Yasushi Nanishi, Donald J. Silversmith
2010 J jnl
Doping Asymmetry Problem in ZnO: Current Status and Outlook.
Proc. IEEE
Vitaliy Avrutin, Donald J. Silversmith, Hadis Morkoç
2010 J jnl
Ferromagnetism in ZnO- and GaN-Based Diluted Magnetic Semiconductors: Achievements and Challenges.
Proc. IEEE
Vitaliy Avrutin, Natalia Izyumskaya, Ümit Özgür, Donald J. Silversmith, Hadis Morkoç
2010 J jnl
GaN-Based Light-Emitting Diodes: Efficiency at High Injection Levels.
Proc. IEEE
Ümit Özgür, Huiyong Liu, Xing Li, Xianfeng Ni, Hadis Morkoç
2010 J jnl
Growth of Bulk GaN and AlN: Progress and Challenges.
Proc. IEEE
Vitaliy Avrutin, Donald J. Silversmith, Yusuke Mori, Fumio Kawamura, Yasuo Kitaoka, Hadis Morkoç
2010 J jnl
Small Signal Equivalent Circuit Modeling for AlGaN/GaN HFET: Hybrid Extraction Method for Determining Circuit Elements of AlGaN/GaN HFET.
Proc. IEEE
Qian Fan, Jacob H. Leach, Hadis Morkoç
2010 J jnl
Status of Reliability of GaN-Based Heterojunction Field Effect Transistors.
Proc. IEEE
Jacob H. Leach, Hadis Morkoç
2010 J jnl
Wide Bandgap Semiconductor-Based Surface-Emitting Lasers: Recent Progress in GaN-Based Vertical Cavity Surface-Emitting Lasers and GaN-/ZnO-Based Polariton Lasers.
Proc. IEEE
Ryoko Shimada, Hadis Morkoç
2010 J jnl
ZnO Devices and Applications: A Review of Current Status and Future Prospects.
Proc. IEEE
Ümit Özgür, Daniel Hofstetter, Hadis Morkoç
2010 J jnl
n-Al0.15Ga0.85 N/p-6H-SiC heterostructure and based bipolar transistor.
Microelectron. Reliab.
Ya. I. Alivov, Qian Fan, Xianfeng Ni, Sergey A. Chevtchenko, I. B. Bhat, Hadis Morkoç
1995 J jnl
Emerging gallium nitride based devices.
Proc. IEEE
S. N. Mohammad, Arnel A. Salvador, Hadis Morkoç
1993 J jnl
Strained layer heterostructures, and their applications to MODFETs, HBTs, and lasers.
Proc. IEEE
Hadis Morkoç, Boris Sverdlov, Guang-Bo Gao
1986 J jnl
Modulation-doped GaAs/(Al, Ga)As heterojunction field-effect transistors: MODFETs.
Proc. IEEE
Timothy J. Drummond, William Ted Masselink, Hadis Morkoç