Gérard Ghibaudo

74 papers C 1Journal 34Unranked 39

Year	Rank	Type	Title / Venue / Authors
2023	—	`conf`	Experimental Study of Self-Heating Effect in InGaAs HEMTs for Quantum Technologies Down to 10K. IRPS F. Serra Di Santa Maria, Francis Balestra, Christoforos G. Theodorou, Gérard Ghibaudo, Cezar B. Zota, Eunjung Cha
2022	—	`conf`	In-depth electrical characterization of deca-nanometer InGaAs MOSFET down to cryogenic temperatures for low-power quantum applications. ESSDERC F. Serra Di Santa Maria, Christoforos G. Theodorou, Francis Balestra, Gérard Ghibaudo, Eunjung Cha, Cezar B. Zota
2021	—	`conf`	"Pinch to Detect": A Method to Increase the Number of Detectable RTN Traps in Nano-scale MOSFETs. IRPS Angeliki Tataridou, Gérard Ghibaudo, Christoforos G. Theodorou
2021	—	`conf`	Parasitic Capacitance Analysis in Short Channel GaN MIS-HEMTs. ESSDERC Roméo Kom Kammeugne, Charles Leroux, Tadeu Mota Frutuoso, Jacques Cluzel, Laura Vauche, Cyrille Le Royer, Romain Gwoziecki, Xavier Garros, Fred Gaillard, Matthew Charles, Edwige Bano, Gérard Ghibaudo
2021	—	`conf`	Reliable method for low field temperature dependent mobility extraction at Al2O3/GaN interface. ESSDERC Bledion Rrustemi, Aby-Gaël Viey, Marie-Anne Jaud, François Triozon, William Vandendaele, Charles Leroux, Jacques Cluzel, S. Martin, Cyrille Le Royer, Romain Gwoziecki, Roberto Modica, Ferdinando Iucolano, Fred Gaillard, Thierry Poiroux, Gérard Ghibaudo
2021	—	`conf`	Study on the difference between ID(VG) and C(VG) pBTI shifts in GaN-on-Si E-mode MOSc-HEMT. IRPS Aby-Gaël Viey, William Vandendaele, Marie-Anne Jaud, Jean Coignus, Jacques Cluzel, Alexis Krakovinsky, Simon Martin, Jérome Biscarrat, Romain Gwoziecki, Veronique Sousa, Fred Gaillard, Roberto Modica, Ferdinando Iucolano, Matteo Meneghini, Gaudenzio Meneghesso, Gérard Ghibaudo
2021	—	`conf`	VERILOR: A Verilog-A Model of Lorentzian Spectra for Simulating Trap-related Noise in CMOS Circuits. ESSDERC Angeliki Tataridou, Gérard Ghibaudo, Christoforos G. Theodorou
2019	—	`conf`	Influence of Gate Length on pBTI in GaN-on-Si E-Mode MOSc-HEMT. IRPS Aby-Gaël Viey, William Vandendaele, Marie-Anne Jaud, Romain Gwoziecki, Alphonse Torres, Marc Plissonnier, Fred Gaillard, Gérard Ghibaudo, Roberto Modica, Ferdinando Iucolano, Matteo Meneghini, Gaudenzio Meneghesso
2018	—	`conf`	Analysis of Gate Current Wafer Level Variability in Advanced FD-SOI MOSFETs. ESSDERC Krishna Pradeep, Theano A. Karatsori, Thierry Poiroux, Andre Juge, Patrick Scheer, Gilles Gouget, Emmanuel Josse, Gérard Ghibaudo
2018	J	`jnl`	New NBTI models for degradation and relaxation kinetics valid over extended temperature and stress/recovery ranges. Microelectron. Reliab. D. Nouguier, X. Federspiel, Gérard Ghibaudo, M. Rafik, David Roy
2018	—	`conf`	Performance & reliability of 3D architectures (πfet, Finfet, Ωfet). IRPS Antoine Laurent, Xavier Garros, Sylvain Barraud, J. Pelloux-Prayer, Mikaël Cassé, Fred Gaillard, X. Federspiel, David Roy, E. Vincent, Gérard Ghibaudo
2018	—	`conf`	Static and Low Frequency Noise Characterization of InGaAs MOSFETs and FinFETs on Insulator. ESSDERC Theano A. Karatsori, K. Bennamane, Christoforos G. Theodorou, L. Czornomaz, Jean Fompeyrine, Cezar B. Zota, Clarissa Convertino, Gérard Ghibaudo
2018	J	`jnl`	Study of forward AC stress degradation of GaN-on-Si Schottky diodes. Microelectron. Reliab. Thomas Lorin, William Vandendaele, Romain Gwoziecki, Charlotte Gillot, Jérome Biscarrat, Gérard Ghibaudo, Fred Gaillard
2017	J	`jnl`	Physically-based evaluation of aging contributions in HC/FN-programmed 40 nm NOR Flash technology. Microelectron. Reliab. Giulio Torrente, Jean Coignus, Alexandre Vernhet, Jean-Luc Ogier, David Roy, Gérard Ghibaudo
2017	—	`conf`	Precise EOT regrowth extraction enabling performance analysis of low temperature extension first devices. ESSDERC Jessy Micout, Quentin Rafhay, Xavier Garros, Mikaël Cassé, Jean Coignus, Luca Pasini, Cao-Minh Vincent Lu, Nils Rambal, Claire Fenouillet-Béranger, Laurent Brunet, G. Romano, R. Gassilloud, Perrine Batude, Maud Vinet, Gérard Ghibaudo
2016	—	`conf`	Electrical characterization of FDSOI CMOS devices. ESSDERC Gérard Ghibaudo
2016	J	`jnl`	Hot carrier degradation modeling of short-channel n-FinFETs suitable for circuit simulators. Microelectron. Reliab. Ioannis Messaris, Theano A. Karatsori, Nikolaos Fasarakis, Christoforos G. Theodorou, Spiros Nikolaidis, Gérard Ghibaudo, C. A. Dimitriadis
2016	—	`conf`	Noise-induced dynamic variability in nano-scale CMOS SRAM cells. ESSDERC Christoforos G. Theodorou, Mouenes Fadlallah, Xavier Garros, Charalambos A. Dimitriadis, Gérard Ghibaudo
2016	—	`conf`	RAPIDO Testing and Modeling of Assisted Write and Read Operations for SRAMs. NATW Joseph Nguyen, David Turgis, David Bonciani, Brice Lhomme, Yann Carminati, Olivier Callen, Guillaume Guirleo, Lorenzo Ciampolini, Gérard Ghibaudo
2016	—	`conf`	Statistical characterization of drain current local and global variability in sub 15nm Si/SiGe Trigate pMOSFETs. ESSDERC R. Lavieville, Theano A. Karatsori, Christoforos G. Theodorou, Sylvain Barraud, C. A. Dimitriadis, Gérard Ghibaudo
2015	—	`conf`	Analysis of the SET and RESET states drift of phase-change memories by low frequency noise measurements. IRPS Sarra Souiki-Figuigui, Veronique Sousa, Gérard Ghibaudo, Gabriele Navarro, Martin Coué, Luca Perniola, P. Zuliani, Roberto Annunziata
2015	—	`conf`	Effective work function engineering by sacrificial lanthanum diffusion on HfON-based 14 nm NFET devices. ESSDERC Carlos Suarez-Segovia, Charles Leroux, Florian Domengie, Karen Dabertrand, Vincent Joseph, Giovanni Romano, Pierre Caubet, Stephane Zoll, Olivier Weber, Gérard Ghibaudo, Gilles Reimbold, Michel Haond
2015	—	`conf`	Impact of short-channel effects on velocity overshoot in MOSFET. NEWCAS Gaspard Hiblot, Quentin Rafhay, Frédéric Boeuf, Gérard Ghibaudo
2015	—	`conf`	Low-frequency noise in bare SOI wafers: Experiments and model. ESSDERC Luca Pirro, Irina Ionica, Sorin Cristoloveanu, Gérard Ghibaudo
2015	—	`conf`	New LFN and RTN analysis methodology in 28 and 14nm FD-SOI MOSFETs. IRPS Christoforos G. Theodorou, Eleftherios G. Ioannidis, Sébastien Haendler, Nicolas Planes, Emmanuel Josse, Charalambos A. Dimitriadis, Gérard Ghibaudo
2015	—	`conf`	On the impact of OxRAM-based synapses variability on convolutional neural networks performance. NANOARCH Daniele Garbin, Elisa Vianello, Olivier Bichler, M. Azzaz, Quentin Rafhay, Philippe Candelier, Christian Gamrat, Gérard Ghibaudo, Barbara De Salvo, Luca Perniola
2015	—	`conf`	Optimization of Trigate-On-Insulator MOSFET aspect ratio with MASTAR. ESSDERC Gaspard Hiblot, Quentin Rafhay, Loic Gaben, Gérard Ghibaudo, Frédéric Boeuf
2015	—	`conf`	Physical understanding of low frequency degradation of NMOS TDDB in High-k metal gate stack-based technology. Implication on lifetime assessment. IRPS A. Bezza, M. Rafik, David Roy, X. Federspiel, P. Mora, Cheikh Diouf, Vincent Huard, Gérard Ghibaudo
2015	J	`jnl`	Physically-based extraction methodology for accurate MOSFET degradation assessment. Microelectron. Reliab. Giulio Torrente, Jean Coignus, Sophie Renard, Alexandre Vernhet, Gilles Reimbold, David Roy, Gérard Ghibaudo
2014	J	`jnl`	Characterization Methodology for MOSFET Local Systematic Variability in Presence of Statistical Variability. J. Low Power Electron. Omar Jonani Franco Piliado, Giancarlo Castaneda, Andre Juge, Gérard Ghibaudo
2014	—	`conf`	Impact of Random Telegraph Signals on 6T high-density SRAM in 28nm UTBB FD-SOI. ESSDERC Kaya Can Akyel, Lorenzo Ciampolini, Olivier Thomas, David Turgis, Gérard Ghibaudo
2014	—	`conf`	Impact of quantum modulation of the inversion charge in the MOSFET subthreshold regime. ESSDERC Gaspard Hiblot, Quentin Rafhay, Frédéric Boeuf, Gérard Ghibaudo
2014	—	`conf`	Statistical analysis of dynamic variability in 28nm FD-SOI MOSFETs. ESSDERC Eleftherios G. Ioannidis, Sébastien Haendler, Christoforos G. Theodorou, Nicolas Planes, Charalabos A. Dimitriadis, Gérard Ghibaudo
2014	—	`conf`	The importance of the spacer region to explain short channels mobility collapse in 28nm Bulk and FDSOI technologies. ESSDERC Frederic Monsieur, Yvan Denis, Denis Rideau, Vincent Quenette, Gilles Gouget, Clément Tavernier, Hervé Jaouen, Gérard Ghibaudo, Joris Lacord
2013	—	`conf`	Influence of device scaling on low-frequency noise in SOI tri-gate N- and p-type Si nanowire MOSFETs. ESSDERC Masahiro Koyama, Mikaël Cassé, Remi Coquand, Sylvain Barraud, Gérard Ghibaudo, Hiroshi Iwai, Gilles Reimbold
2013	—	`conf`	Low-temperature transport characteristics in SOI and sSOI nanowires down to 8nm width: Evidence of IDS and mobility oscillations. ESSDERC Remi Coquand, Sylvain Barraud, Mikaël Cassé, Masahiro Koyama, Virginie Maffini-Alvaro, Marie-Pierre Samson, Lucie Tosti, Xavier Mescot, Gérard Ghibaudo, Stéphane Monfray, Frédéric Boeuf, Olivier Faynot, Barbara De Salvo
2013	C	`conf`	Multiple-pulse dynamic stability and failure analysis of low-voltage 6T-SRAM bitcells in 28nm UTBB-FDSOI. ISCAS Kaya Can Akyel, Lorenzo Ciampolini, Olivier Thomas, Bertrand Pelloux-Prayer, Shishir Kumar, Philippe Flatresse, Christophe Lecocq, Gérard Ghibaudo
2012	—	`conf`	Analytical modeling of parasitics in monolithically integrated 3D inverters. ICICDT Joris Lacord, Perrine Batude, Gérard Ghibaudo, Frédéric Boeuf
2012	—	`conf`	Compact modeling for the transcapacitances of undoped or lightly doped nanoscale cylindrical surrounding gate MOSFETs. ICECS Nikolaos Fasarakis, Andreas Tsormpatzoglou, Dimitrios H. Tassis, Konstantinos Papathanasiou, C. A. Dimitriadis, Gérard Ghibaudo
2012	—	`conf`	Impact of front-back gate coupling on low frequency noise in 28 nm FDSOI MOSFETs. ESSDERC Christoforos G. Theodorou, Eleftherios G. Ioannidis, Sébastien Haendler, Nicolas Planes, Franck Arnaud, Jalal Jomaah, Charalambos A. Dimitriadis, Gérard Ghibaudo
2012	—	`conf`	New parameter extraction method based on split C-V for FDSOI MOSFETs. ESSDERC Imed Ben Akkez, Antoine Cros, Claire Fenouillet-Béranger, Frédéric Boeuf, Quentin Rafhay, Francis Balestra, Gérard Ghibaudo
2012	J	`jnl`	Reliability Characterization and Modeling Solution to Predict Aging of 40-nm MOSFET DC and RF Performances Induced by RF Stresses. IEEE J. Solid State Circuits Laurent Negre, David Roy, Florian Cacho, Patrick Scheer, Sebastien Jan, Samuel Boret, Daniel Gloria, Gérard Ghibaudo
2012	—	`conf`	Static and low frequency noise characterization of densely packed CNT-TFTs. ESSDERC Min-Kyu Joo, Un Jeong Kim, Dae-Young Jeon, So Jeong Park, Mireille Mouis, Gyu-Tae Kim, Gérard Ghibaudo
2012	—	`conf`	Study of carrier transport in strained and unstrained SOI tri-gate and omega-gate Si-nanowire MOSFETs. ESSDERC Masahiro Koyama, Mikaël Cassé, Remi Coquand, Sylvain Barraud, Hiroshi Iwai, Gérard Ghibaudo, Gilles Reimbold
2010	J	`jnl`	Unified soft breakdown MOSFETs compact model: From experiments to circuit simulation. Microelectron. Reliab. L. Gerrer, M. Rafik, G. Ribes, Gérard Ghibaudo, E. Vincent
2009	—	`conf`	Challenges and prospects of RF oscillators using silicon resonant tunneling diodes. ESSCIRC Emanuela Buccafurri, Abdelkrim Medjahdi, Françis Calmon, Raphael Clerc, Marco Pala, A. Poncet, Gérard Ghibaudo
2009	—	`conf`	Oxide Soft Breakdown : From device modeling to small circuit simulation. ESSCIRC L. Gerrer, Gérard Ghibaudo, G. Ribes
2008	J	`jnl`	Impact of inside spacer process on fully self-aligned 250 GHz SiGe: C HBTs reliability performances: a-Si vs. nitride. Microelectron. Reliab. Malick Diop, Nathalie Revil, M. Marin, Frederic Monsieur, Pascal Chevalier, Gérard Ghibaudo
2008	J	`jnl`	Impact of silicon nitride CESL on NLDEMOS transistor reliability. Microelectron. Reliab. Gaelle Beylier, Sylvie Bruyère, Darcy Benoit, Gérard Ghibaudo
2007	J	`jnl`	Accurate determination of flat band voltage in advanced MOS structure. Microelectron. Reliab. Charles Leroux, Gérard Ghibaudo, Gilles Reimbold
2007	J	`jnl`	Initial and PBTI-induced traps and charges in Hf-based oxides/TiN stacks. Microelectron. Reliab. Gilles Reimbold, Jérôme Mitard, Xavier Garros, Charles Leroux, Gérard Ghibaudo, François Martin
2007	J	`jnl`	Refined electrical analysis of two charge states transition characteristic of "borderless" silicon nitride. Microelectron. Reliab. Gaelle Beylier, Sylvie Bruyère, Darcy Benoit, Gérard Ghibaudo
2005	J	`jnl`	Electrical properties in low temperature range (5K-300K) of Tantalum Oxide dielectric MIM capacitors. Microelectron. Reliab. Emilie Deloffre, L. Montès, Gérard Ghibaudo, Sylvie Bruyère, Serge Blonkowski, Stéphane Bécu, Mickael Gros-Jean, Sébastien Crémer
2005	J	`jnl`	Evidence and modelling current dependence of defect generation probability and its impact on charge to breakdown. Microelectron. Reliab. G. Ribes, S. Bruyère, Mickael Denais, David Roy, Gérard Ghibaudo
2005	J	`jnl`	Multi-vibrational hydrogen release: Physical origin of T Microelectron. Reliab. G. Ribes, S. Bruyère, Mickael Denais, Frederic Monsieur, Vincent Huard, David Roy, Gérard Ghibaudo
2005	J	`jnl`	On the SILC mechanism in MOSFET's with ultrathin oxides. Microelectron. Reliab. D. Bauza, F. Rahmoune, R. Laqli, Gérard Ghibaudo
2003	J	`jnl`	Charge trapping in SiO2/HfO2/TiN gate stack. Microelectron. Reliab. François Lime, Gérard Ghibaudo, B. Guillaumot
2003	J	`jnl`	Guest Editorial. Microelectron. Reliab. Gérard Ghibaudo, E. Vincent
2003	J	`jnl`	Influence of nitradation in ultra-thin oxide on the gate current degradation of N and PMOS devices. Microelectron. Reliab. M. Fadlallah, C. Petit, A. Meinertzhagen, Gérard Ghibaudo, M. Bidaud, O. Simonetti, F. Guyader
2003	J	`jnl`	On the role of holes in oxide breakdown mechanism in inverted nMOSFETs. Microelectron. Reliab. Frederic Monsieur, E. Vincent, Vincent Huard, S. Bruyère, David Roy, Thomas Skotnicki, G. Pananakakis, Gérard Ghibaudo
2002	J	`jnl`	Electrical noise and RTS fluctuations in advanced CMOS devices. Microelectron. Reliab. Gérard Ghibaudo, T. Boutchacha
2002	J	`jnl`	Gate oxide Reliability assessment optimization. Microelectron. Reliab. Frederic Monsieur, E. Vincent, David Roy, S. Bruyère, G. Pananakakis, Gérard Ghibaudo
2002	J	`jnl`	Origin of hot carrier degradation in advanced nMOSFET devices. Microelectron. Reliab. Bogdan Cretu, Francis Balestra, Gérard Ghibaudo, Georges Guégan
2002	J	`jnl`	Static and low frequency noise characterization of surface- and buried-mode 0.1 mum P and N MOSFETs. Microelectron. Reliab. M. Fadlallah, Gérard Ghibaudo, Jalal Jomaah, M. Zoaeter, Georges Guégan
2001	J	`jnl`	Body effect induced wear-out acceleration in ultra-thin oxides. Microelectron. Reliab. Sylvie Bruyère, David Roy, E. Robilliart, E. Vincent, Gérard Ghibaudo
2001	J	`jnl`	Determination of Dielectric Breakdown Weibull Distribution Parameters Confidence Bounds for Accurate Ultrathin Oxide Reliability Predictions. Microelectron. Reliab. Frederic Monsieur, E. Vincent, David Roy, S. Bruyère, G. Pananakakis, Gérard Ghibaudo
2001	J	`jnl`	Direct tunnelling models for circuit simulation. Microelectron. Reliab. P. O'Sullivan, Raphael Clerc, Kevin G. McCarthy, Alan Mathewson, Gérard Ghibaudo
2001	J	`jnl`	Electrical characterization and quantum modeling of MOS capacitors with ultra-thin oxides (1.4-3 nm). Microelectron. Reliab. Raphael Clerc, Alessandro S. Spinelli, Gérard Ghibaudo, Charles Leroux, G. Pananakakis
2001	J	`jnl`	Failures in ultrathin oxides: Stored energy or carrier energy driven? Microelectron. Reliab. S. Bruyère, Frederic Monsieur, David Roy, E. Vincent, Gérard Ghibaudo
2001	J	`jnl`	Improved analysis of low frequency noise in dynamic threshold MOS/SOI transistors. Microelectron. Reliab. Sébastien Haendler, Jalal Jomaah, Gérard Ghibaudo, Francis Balestra
2001	J	`jnl`	Low frequency noise and reliability properties pf 0.12 mum CMOS devices with Ta Microelectron. Reliab. M. Fadlallah, Arkadiusz Szewczyk, C. Giannakopoulos, Bogdan Cretu, Frederic Monsieur, T. Devoivre, Jalal Jomaah, Gérard Ghibaudo
2001	J	`jnl`	Stress induced leakage current at low field in ultra thin oxides. Microelectron. Reliab. François Lime, Gérard Ghibaudo, Georges Guégan
2001	J	`jnl`	Wear-out, breakdown occurrence and failure detection in 18-25 Å ultrathin oxides. Microelectron. Reliab. Frederic Monsieur, E. Vincent, G. Pananakakis, Gérard Ghibaudo
2000	—	`conf`	Numerical simulation and modeling of static characteristics and electrical noise in submicron MOS transistors. ICECS M. Fadlallah, Gérard Ghibaudo, Jalal Jomaah, M. Zoaeter