Gyuseong Kang - RankMe

11 papers A 1C 1Journal 4Unranked 5

Year	Rank	Type	Title / Venue / Authors
2026	—	`conf`	15.3 An 8nm eMRAM for Auto-G1 with a 125MHz Read Speed at 0.6V and 19.94Mb/mm ISSCC Hyunjin Shin, Gyuseong Kang, Yeseul Kim, Dohui Kim, Kyuseong Kim, Sunkyu Lee, Hangil Lee, Sanggyeong Won, Mijoung Kim, Jaeho Lee, Seungpil Ko, Jaechul Shim, Shinhee Han, Kiseok Suh, Sohee Hwang, HyunChang Lee, Jonghoon Jung, Sanghoon Baek
2024	—	`conf`	14nm FinFET Node Embedded MRAM Technology for Automotive Non-Volatile RAM Applications with Endurance Over 1E12-Cycles. VLSI Technology and Circuits Joosung Oh, Jaehyeon Park, Kiseok Suh, Kangmoon Lee, Sohee Hwang, Myeongjun Bak, Honghyun Kim, Baeseong Kwon, Dongkyu Lee, Minkwan Kim, Seungmo Noh, Jongmin Lee, Soomin Cho, Gyuseong Kang, Hyun-Jin Shin, Yongsung Ji, Atsushi Okada, Ung-Hwan Pi, KwangSeok Kim, Younghyun Kim, Jeong-Heon Park, Seungpil Ko, Tae-Young Lee, Kyungtae Nam, Minkwon Cho, Boyoung Seo, Shinhee Han, Yoonjong Song, Kangho Lee, Ja-Hum Ku
2024	—	`conf`	A 14nm 128Mb eMRAM Implemented with 17.88Mb/mm VLSI Technology and Circuits Gyuseong Kang, Hyunjin Shin, Sanggyeong Won, Dohui Kim, Kyuseong Kim, Soohoh Seol, Sunkyu Lee, Hangil Lee, Yeonho Jung, Jaechul Shim, Kiseok Suh, Sohee Hwang, Daehyun Jang, Sangyeop Baeck, Sei Seung Yoon
2023	—	`conf`	A 14nm 128Mb Embedded MRAM Macro achieved the Best Figure-Of-Merit with 80MHz Read operation and 18.1Mb/mm² implementation at 0.64V. VLSI Technology and Circuits Gyuseong Kang, Hyunjin Shin, Hyuntaek Jung, Sunkyu Lee, Jaeseung Choi, Sangyeop Baeck, Hyunsung Jung, Daeshik Kim, Sohee Hwang, Shinhee Han, Yongsung Ji, Sei Seung Yoon
2022	J	`jnl`	Stochastic SOT Device Based SNN Architecture for On-Chip Unsupervised STDP Learning. IEEE Trans. Computers Yunho Jang, Gyuseong Kang, Taehwan Kim, Yeongkyo Seo, Kyung-Jin Lee, Byong-Guk Park, Jongsun Park
2019	J	`jnl`	Charge-Recycling-Based Redundant Write Prevention Technique for Low-Power SOT-MRAM. IEEE Trans. Very Large Scale Integr. Syst. Gyuseong Kang, Jongsun Park
2018	C	`conf`	Charge-Recycling based Redundant Write Prevention Technique for Low Power SOT-MRAM. ISCAS Gyuseong Kang, Yunho Jang, Jongsun Park
2018	A	`conf`	Spin Orbit Torque Device based Stochastic Multi-bit Synapses for On-chip STDP Learning. ISLPED Gyuseong Kang, Yunho Jang, Jongsun Park
2017	—	`conf`	A DRAM based physical unclonable function capable of generating >10 CICC Qianying Tang, Chen Zhou, Woong Choi, Gyuseong Kang, Jongsun Park, Keshab K. Parhi, Chris H. Kim
2017	J	`jnl`	Embedded DRAM-Based Memory Customization for Low-Cost FFT Processor Design. IEEE Trans. Very Large Scale Integr. Syst. Gyuseong Kang, Woong Choi, Jongsun Park
2015	J	`jnl`	A Refresh-Less eDRAM Macro With Embedded Voltage Reference and Selective Read for an Area and Power Efficient Viterbi Decoder. IEEE J. Solid State Circuits Woong Choi, Gyuseong Kang, Jongsun Park