Guido Groeseneken

93 papers A 2C 3Misc 1Journal 41Unranked 46

Year	Rank	Type	Title / Venue / Authors
2025	J	`jnl`	A 1.8-V GPIO With Design-Technology-Reliability Co-Optimization in Sub-3-nm GAA-NS Technology. IEEE J. Solid State Circuits Wen-Chieh Chen, Shih-Hung Chen, Man-Ching Huang, Shu-Wei Chang, Geert Hellings, Guido Groeseneken
2024	—	`conf`	Insight into Latchup Risk in 28nm Planar Bulk Technology for Quantum Computing Applications. IRPS Kateryna Serbulova, Zi-En Qiu, Shih-Hung Chen, Alexander Grill, Kuo-Hsing Kao, Jo De Boeck, Guido Groeseneken
2023	—	`conf`	Investigating Nanowire, Nanosheet and Forksheet FET Hot-Carrier Reliability via TCAD Simulations: Invited Paper. IRPS Michiel Vandemaele, Ben Kaczer, Erik Bury, Jacopo Franco, Adrian Chasin, Alexander Makarov, Hans Mertens, Geert Hellings, Guido Groeseneken
2023	—	`conf`	Upcoming Challenges of ESD Reliability in DTCO with BS-PDN Routing via BPRs. VLSI Technology and Circuits Wen-Chieh Chen, S.-H. Chen, Anabela Veloso, Kateryna Serbulova, Geert Hellings, Guido Groeseneken
2022	—	`conf`	Enabling Active Backside Technology for ESD and LU Reliability in DTCO/STCO. VLSI Technology and Circuits Kateryna Serbulova, S.-H. Chen, Geert Hellings, Anabela Veloso, Anne Jourdain, Dimitri Linten, Jo De Boeck, Guido Groeseneken, Julien Ryckaert, Geert Van der Plas, Eric Beyne, Eugenio Dentoni Litta, Naoto Horiguchi
2022	—	`conf`	Simulation Comparison of Hot-Carrier Degradation in Nanowire, Nanosheet and Forksheet FETs. IRPS Michiel Vandemaele, Ben Kaczer, Stanislav Tyaginov, Erik Bury, Adrian Vaisman Chasin, Jacopo Franco, Alexander Makarov, Hans Mertens, Geert Hellings, Guido Groeseneken
2022	—	`conf`	Wafer-Level Aging of InGaAs/GaAs Nano-Ridge p-i-n Diodes Monolithically Integrated on Silicon. IRPS Ping-Yi Hsieh, Artemisia Tsiara, Barry J. O'Sullivan, Didit Yudistira, Marina Baryshnikova, Guido Groeseneken, Bernardette Kunert, Marianna Pantouvaki, Joris Van Campenhout, Ingrid De Wolf
2021	—	`conf`	Physics-based device aging modelling framework for accurate circuit reliability assessment. IRPS Zhicheng Wu, Jacopo Franco, Brecht Truijen, Philippe Roussel, Stanislav Tyaginov, Michiel Vandemaele, Erik Bury, Guido Groeseneken, Dimitri Linten, Ben Kaczer
2021	—	`conf`	The properties, effect and extraction of localized defect profiles from degraded FET characteristics. IRPS Michiel Vandemaele, Ben Kaczer, Stanislav Tyaginov, Jacopo Franco, Robin Degraeve, Adrian Vaisman Chasin, Zhicheng Wu, Erik Bury, Yang Xiang, Hans Mertens, Guido Groeseneken
2021	—	`conf`	Understanding the memory window in 1T-FeFET memories: a depolarization field perspective. IMW K. Kaczmarek, Marie Garcia Bardon, Y. Xiang, Laurent Breuil, Nicolo Ronchi, Bertrand Parvais, Guido Groeseneken, Jan Van Houdt
2020	—	`conf`	The Influence of Gate Bias on the Anneal of Hot-Carrier Degradation. IRPS Michiel Vandemaele, Kai-Hsin Chuang, Erik Bury, Stanislav Tyaginov, Guido Groeseneken, Ben Kaczer
2019	—	`conf`	Accelerated Capture and Emission (ACE) Measurement Pattern for Efficient BTI Characterization and Modeling. IRPS Zhicheng Wu, Jacopo Franco, Dieter Claes, Gerhard Rzepa, Philippe J. Roussel, Nadine Collaert, Guido Groeseneken, Dimitri Linten, Tibor Grasser, Ben Kaczer
2019	—	`conf`	Experimental calibration of the temperature dependence of the heterojunction bandgap in III-V tunneling devices. DRC Jasper Bizindavyi, Anne S. Verhulst, Quentin Smets, Bart Sorée, Guido Groeseneken
2019	—	`conf`	Full (V IRPS Michiel Vandemaele, Ben Kaczer, Stanislav Tyaginov, Zlatan Stanojevic, Alexander Makarov, Adrian Vaisman Chasin, Erik Bury, Hans Mertens, Dimitri Linten, Guido Groeseneken
2019	—	`conf`	Monolithically integrated GaN power ICs designed using the MIT virtual source GaNFET (MVSG) compact model for enhancement-mode p-GaN gate power HEMTs, logic transistors and resistors. ESSDERC Shuzhen You, Xiangdong Li, Stefaan Decoutere, Guido Groeseneken, Zhanfei Chen, Jun Liu, Yuki Yamashita, Kazutoshi Kobayashi
2019	—	`conf`	Tunnel FETs using Phosphorene/ReS2 heterostructures. DRC Yashwanth Balaji, Quentin Smets, Dennis Lin, Inge Asselberghs, Iuliana P. Radu, Guido Groeseneken
2018	J	`jnl`	A Cautionary Note When Looking for a Truly Reconfigurable Resistive RAM PUF. IACR Trans. Cryptogr. Hardw. Embed. Syst. Kai-Hsin Chuang, Robin Degraeve, Andrea Fantini, Guido Groeseneken, Dimitri Linten, Ingrid Verbauwhede
2018	—	`conf`	A multi-bit/cell PUF using analog breakdown positions in CMOS. IRPS Kai-Hsin Chuang, Erik Bury, Robin Degraeve, Ben Kaczer, T. Kallstenius, Guido Groeseneken, Dimitri Linten, Ingrid Verbauwhede
2018	—	`conf`	Impact of calibrated band-tails on the subthreshold swing of pocketed TFETs. DRC Jasper Bizindavyi, Anne S. Verhulst, Bart Soree, Guido Groeseneken
2018	—	`conf`	Impact of slow and fast oxide traps on In0.53Ga0.47As device operation studied using CET maps. IRPS Vamsi Putcha, Jacopo Franco, Abhitosh Vais, Ben Kaczer, S. Sioncke, Dimitri Linten, Guido Groeseneken
2018	—	`conf`	Investigation of the endurance of FE-HfO2 devices by means of TDDB studies. IRPS Karine Florent, A. Subirats, Simone Lavizzari, Robin Degraeve, Umberto Celano, Ben Kaczer, Luca Di Piazza, Mihaela Ioana Popovici, Guido Groeseneken, Jan Van Houdt
2017	—	`conf`	ESD characterisation of a-IGZO TFTs on Si and foil substrates. ESSDERC Nian Wang, Shih-Hung Chen, Geert Hellings, Kris Myny, Soeren Steudel, Mirko Scholz, Roman Boschke, Dimitri Linten, Guido Groeseneken
2017	—	`conf`	From planar to vertical capacitors: A step towards ferroelectric V-FeFET integration. ESSDERC Karine Florent, Simone Lavizzari, Luca Di Piazza, Mihaela Ioana Popovici, Goedele Potoms, Tom Raymaekers, Guido Groeseneken, Jan Van Houdt
2017	—	`conf`	Tunneling transistors based on MoS2/MoTe2 Van der Waals heterostructures. ESSDERC Yashwanth Balaji, Quentin Smets, Cesar J. Lockhart de la Rosa, Anh Khoa Augustin Lu, Daniele Chiappe, Tarun Agarwal, Dennis Lin, Cedric Huyghebaert, Iuliana P. Radu, Dan Mocuta, Guido Groeseneken
2017	J	`jnl`	Will Chips of the Future Learn How to Feel Pain and Cure Themselves? IEEE Des. Test Francky Catthoor, Guido Groeseneken
2016	—	`conf`	Non-uniform strain in lattice-mismatched heterostructure tunnel field-effect transistors. ESSDERC Devin Verreck, Anne S. Verhulst, Bart Soree, Nadine Collaert, Anda Mocuta, Aaron Thean, Guido Groeseneken
2015	—	`conf`	Characterization and simulation methodology for time-dependent variability in advanced technologies. CICC Pieter Weckx, Ben Kaczer, Praveen Raghavan, Jacopo Franco, Marko Simicic, Philippe J. Roussel, Dimitri Linten, Aaron Thean, Diederik Verkest, Francky Catthoor, Guido Groeseneken
2015	—	`conf`	Characterization of time-dependent variability using 32k transistor arrays in an advanced HK/MG technology. IRPS Pieter Weckx, Ben Kaczer, C. Chen, Jacopo Franco, Erik Bury, Kaushik Chanda, J. Watt, Philippe J. Roussel, Francky Catthoor, Guido Groeseneken
2015	J	`jnl`	Comparison of NBTI aging on adder architectures and ring oscillators in the downscaling technology nodes. Microprocess. Microsystems Halil Kükner, Pieter Weckx, Sébastien Morrison, Jacopo Franco, Maria Toledano-Luque, Moonju Cho, Praveen Raghavan, Ben Kaczer, Doyoung Jang, Kenichi Miyaguchi, Marie Garcia Bardon, Francky Catthoor, Liesbet Van der Perre, Rudy Lauwereins, Guido Groeseneken
2015	—	`conf`	ESD characterization of planar InGaAs devices. IRPS Zhigang Ji, Dimitri Linten, Roman Boschke, Geert Hellings, S. H. Chen, AliReza Alian, D. Zhou, Yves Mols, Tsvetan Ivanov, Jacopo Franco, Ben Kaczer, X. Zhang, R. Gao, Jianfu Zhang, Weidong Zhang, Nadine Collaert, Guido Groeseneken
2015	—	`conf`	ESD protection diodes in optical interposer technology. ICICDT Roman Boschke, Guido Groeseneken, Mirko Scholz, Shih-Hung Chen, Geert Hellings, Peter Verheyen, Dimitri Linten
2015	—	`conf`	Engineering of a TiN\Al2O3\(Hf, Al)O2\Ta2O5\Hf RRAM cell for fast operation at low current. ESSDERC C. Y. Chen, Ludovic Goux, Andrea Fantini, Robin Degraeve, Augusto Redolfi, Guido Groeseneken, Malgorzata Jurczak
2015	—	`conf`	Four point probe ramped voltage stress as an efficient method to understand breakdown of STT-MRAM MgO tunnel junctions. IRPS Simon Van Beek, Koen Martens, Philippe Roussel, Gabriele Luca Donadio, Johan Swerts, Sofie Mertens, Gouri Sankar Kar, Tai Min, Guido Groeseneken
2015	—	`conf`	Impact of time-dependent variability on the yield and performance of 6T SRAM cells in an advanced HK/MG technology. ICICDT Pieter Weckx, Ben Kaczer, Philippe J. Roussel, Francky Catthoor, Guido Groeseneken
2015	—	`conf`	NBTI in Si0.55Ge0.45 cladding p-FinFETs: Porting the superior reliability from planar to 3D architectures. IRPS Jacopo Franco, Ben Kaczer, Philippe J. Roussel, Erik Bury, Hans Mertens, Romain Ritzenthaler, Tibor Grasser, Naoto Horiguchi, Aaron Thean, Guido Groeseneken
2015	—	`conf`	Origins and implications of increased channel hot carrier variability in nFinFETs. IRPS Ben Kaczer, Jacopo Franco, M. Cho, Tibor Grasser, Philippe J. Roussel, Stanislav Tyaginov, M. Bina, Yannick Wimmer, Luis-Miguel Procel, Lionel Trojman, Felice Crupi, Gregory Pitner, Vamsi Putcha, Pieter Weckx, Erik Bury, Z. Ji, An De Keersgieter, Thomas Chiarella, Naoto Horiguchi, Guido Groeseneken, Aaron Thean
2015	—	`conf`	The defect-centric perspective of device and circuit reliability - From individual defects to circuits. ESSDERC Ben Kaczer, Jacopo Franco, Pieter Weckx, Philippe Roussel, Erik Bury, Moonju Cho, Robin Degraeve, Dimitri Linten, Guido Groeseneken, Halil Kukner, Praveen Raghavan, Francky Catthoor, Gerhard Rzepa, Wolfgang Gös, Tibor Grasser
2015	—	`conf`	The relationship between border traps characterized by AC admittance and BTI in III-V MOS devices. IRPS Abhitosh Vais, Koen Martens, Jacopo Franco, Dennis Lin, AliReza Alian, Philippe Roussel, S. Sioncke, Nadine Collaert, Aaron Thean, Marc M. Heyns, Guido Groeseneken, Kristin De Meyer
2015	—	`conf`	Time dependent dielectric breakdown (TDDB) evaluation of PE-ALD SiN gate dielectrics on AlGaN/GaN recessed gate D-mode MIS-HEMTs and E-mode MIS-FETs. IRPS Tian-Li Wu, Denis Marcon, Brice De Jaeger, Marleen Van Hove, Benoit Bakeroot, Steve Stoffels, Guido Groeseneken, Stefaan Decoutere, Robin Roelofs
2014	—	`conf`	Degradation analysis of datapath logic subblocks under NBTI aging in FinFET technology. ISQED Halil Kukner, Moustafa A. Khatib, Sebastien Morrison, Pieter Weckx, Praveen Raghavan, Ben Kaczer, Francky Catthoor, Liesbet Van der Perre, Rudy Lauwereins, Guido Groeseneken
2014	J	`jnl`	Determination of energy and spatial distribution of oxide border traps in In Microelectron. Reliab. Chunmeng Dou, Dennis Lin, Abhitosh Vais, Tsvetan Ivanov, Han-Ping Chen, Koen Martens, Kuniyuki Kakushima, Hiroshi Iwai, Yuan Taur, Aaron Thean, Guido Groeseneken
2014	J	`jnl`	Energy distribution of positive charges in high-k dielectric. Microelectron. Reliab. Sharifah Wan Muhamad Hatta, Zhigang Ji, Jianfu Zhang, Weidong Zhang, Norhayati Soin, Ben Kaczer, Stefan De Gendt, Guido Groeseneken
2014	—	`conf`	Impact of etch stop layer on negative bias illumination stress of amorphous Indium Gallium Zinc Oxide transistors. ESSDERC Ajay Bhoolokam, Manoj Nag, Adrian Vaisman Chasin, Soeren Steudel, Jan Genoe, Gerwin H. Gelinck, Guido Groeseneken, Paul Heremans
2014	C	`conf`	NBTI Aging on 32-Bit Adders in the Downscaling Planar FET Technology Nodes. DSD Halil Kukner, Pieter Weckx, Sebastien Morrison, Praveen Raghavan, Ben Kaczer, Francky Catthoor, Liesbet Van der Perre, Rudy Lauwereins, Guido Groeseneken
2014	J	`jnl`	Physical origin of current collapse in Au-free AlGaN/GaN Schottky Barrier Diodes. Microelectron. Reliab. Jie Hu, Steve Stoffels, Silvia Lenci, Nicolo Ronchi, Rafael Venegas, Shuzhen You, Benoit Bakeroot, Guido Groeseneken, Stefaan Decoutere
2014	J	`jnl`	Stability evaluation of Au-free Ohmic contacts on AlGaN/GaN HEMTs under a constant current stress. Microelectron. Reliab. Tian-Li Wu, Denis Marcon, Steve Stoffels, Shuzhen You, Brice De Jaeger, Marleen Van Hove, Guido Groeseneken, Stefaan Decoutere
2014	J	`jnl`	Use of SSTA Tools for Evaluating BTI Impact on Combinational Circuits. IEEE Trans. Very Large Scale Integr. Syst. Vinicius V. A. Camargo, Ben Kaczer, Gilson I. Wirth, Tibor Grasser, Guido Groeseneken
2013	—	`conf`	Impact of Al2O3 position on performances and reliability in high-k metal gated DRAM periphery transistors. ESSDERC Marc Aoulaiche, Eddy Simoen, Romain Ritzenthaler, Tom Schram, Hiroaki Arimura, Moonju Cho, Thomas Kauerauf, Guido Groeseneken, Naoto Horiguchi, Aaron Thean, Antonio Federico, Felice Crupi, Alessio Spessot, Christian Caillat, Pierre Fazan, Hyuokju Na, Y. Son, K. B. Noh
2013	J	`jnl`	Impact of duty factor, stress stimuli, gate and drive strength on gate delay degradation with an atomistic trap-based BTI model. Microprocess. Microsystems Halil Kükner, Pieter Weckx, Praveen Raghavan, Ben Kaczer, Francky Catthoor, Liesbet Van der Perre, Rudy Lauwereins, Guido Groeseneken
2013	—	`conf`	Quasi-3D method: Time-efficient TCAD and mixed-mode simulations on finFET technologies. CICC Geert Hellings, Shih-Hung Chen, Dimitri Linten, Mirko Scholz, Guido Groeseneken
2013	A	`conf`	Reliability challenges of real-time systems in forthcoming technology nodes. DATE Said Hamdioui, Michael Nicolaidis, Dimitris Gizopoulos, Arnaud Grasset, Guido Groeseneken, Philippe Bonnot
2012	—	`conf`	Analysis of the effect of cell parameters on the maximum RRAM array size considering both read and write. ESSDERC Leqi Zhang, Stefan Cosemans, Dirk J. Wouters, Guido Groeseneken, Malgorzata Jurczak
2012	J	`jnl`	BTI reliability of ultra-thin EOT MOSFETs for sub-threshold logic. Microelectron. Reliab. Jacopo Franco, S. Graziano, Ben Kaczer, Felice Crupi, Lars-Åke Ragnarsson, Tibor Grasser, Guido Groeseneken
2012	J	`jnl`	Buried Silicon-Germanium pMOSFETs: Experimental Analysis in VLSI Logic Circuits Under Aggressive Voltage Scaling. IEEE Trans. Very Large Scale Integr. Syst. Felice Crupi, Massimo Alioto, Jacopo Franco, Paolo Magnone, Ben Kaczer, Guido Groeseneken, Jérôme Mitard, Liesbeth Witters, Thomas Y. Hoffmann
2012	J	`jnl`	Defect-centric perspective of time-dependent BTI variability. Microelectron. Reliab. Maria Toledano-Luque, Ben Kaczer, Jacopo Franco, Philippe Roussel, Tibor Grasser, Guido Groeseneken
2012	C	`conf`	Impact of Duty Factor, Stress Stimuli, and Gate Drive Strength on Gate Delay Degradation with an Atomistic Trap-Based BTI Model. DSD Halil Kukner, Pieter Weckx, Praveen Raghavan, Ben Kaczer, Francky Catthoor, Liesbet Van der Perre, Rudy Lauwereins, Guido Groeseneken
2012	—	`conf`	Low-frequency noise assessment of the transport mechanisms in SiGe channel bulk FinFETs. ESSDERC Tommaso Romeo, Luigi Pantisano, Eddy Simoen, Raymond Krom, Mitsuhiro Togo, N. Horiguchi, Jérôme Mitard, Aaron Thean, Guido Groeseneken, Cor Claeys, Felice Crupi
2012	—	`conf`	Low-power DRAM-compatible Replacement Gate High-k/Metal Gate stacks. ESSDERC Romain Ritzenthaler, Tom Schram, Erik Bury, Jérôme Mitard, L.-Å. Ragnarsson, Guido Groeseneken, N. Horiguchi, Aaron Thean, Alessio Spessot, Christian Caillat, V. Srividya, Pierre Fazan
2012	—	`conf`	Superior reliability and reduced Time-Dependent variability in high-mobility SiGe channel pMOSFETs for VLSI logic applications. ICICDT Jacopo Franco, Ben Kaczer, Jérôme Mitard, Maria Toledano-Luque, Felice Crupi, Geert Eneman, Ph. J. Rousse, Tibor Grasser, M. Cho, Thomas Kauerauf, Liesbeth Witters, Geert Hellings, L.-Å. Ragnarsson, Naoto Horiguchi, Marc M. Heyns, Guido Groeseneken
2012	J	`jnl`	Understanding the Basic Advantages of Bulk FinFETs for Sub- and Near-Threshold Logic Circuits From Device Measurements. IEEE Trans. Circuits Syst. II Express Briefs Felice Crupi, Massimo Alioto, Jacopo Franco, Paolo Magnone, Mitsuhiro Togo, N. Horiguchi, Guido Groeseneken
2011	C	`conf`	Experimental analysis of buried SiGe pMOSFETs from the perspective of aggressive voltage scaling. ISCAS Felice Crupi, Massimo Alioto, Jacopo Franco, Paolo Magnone, Ben Kaczer, Guido Groeseneken, Jérôme Mitard, Liesbeth Witters, Thomas Y. Hoffmann
2011	J	`jnl`	Positive bias temperature instabilities on sub-nanometer EOT FinFETs. Microelectron. Reliab. P. C. Feijoo, Moonju Cho, Mitsuhiro Togo, E. San Andrés, Guido Groeseneken
2010	Misc	`conf`	Identifying the Bottlenecks to the RF Performance of FinFETs. VLSI Design Vaidyanathan Subramanian, Abdelkarim Mercha, Bertrand Parvais, Morin Dehan, Guido Groeseneken, Willy M. C. Sansen, Stefaan Decoutere
2010	J	`jnl`	Impact of design factors and environment on the ESD sensitivity of MEMS micromirrors. Microelectron. Reliab. Sandeep Sangameswaran, Jeroen De Coster, Guido Groeseneken, Ingrid De Wolf
2009	J	`jnl`	A CMOS circuit for evaluating the NBTI over a wide frequency range. Microelectron. Reliab. R. Fernández-García, Ben Kaczer, Guido Groeseneken
2009	J	`jnl`	A plug-and-play wideband RF circuit ESD protection methodology: T-diodes. Microelectron. Reliab. Dimitri Linten, Steven Thijs, Jonathan Borremans, Morin Dehan, David Trémouilles, Mirko Scholz, M. I. Natarajan, Piet Wambacq, Stefaan Decoutere, Guido Groeseneken
2009	J	`jnl`	ESD On-Wafer Characterization: Is TLP Still the Right Measurement Tool? IEEE Trans. Instrum. Meas. Mirko Scholz, Dimitri Linten, Steven Thijs, Sandeep Sangameswaran, Masanori Sawada, Toshiyuki Nakaei, Takumi Hasebe, Guido Groeseneken
2008	J	`jnl`	Editorial. Microelectron. Reliab. Guido Groeseneken, Ingrid De Wolf, A. J. Mouthaan, Jaap Bisschop
2008	A	`conf`	Emerging Yield and Reliability Challenges in Nanometer CMOS Technologies. DATE Georges G. E. Gielen, Pieter De Wit, Elie Maricau, Johan Loeckx, Javier Martín-Martínez, Ben Kaczer, Guido Groeseneken, Rosana Rodríguez, Montserrat Nafría
2008	—	`conf`	Inductor-based ESD protection under CDM-like ESD stress conditions for RF applications. CICC Steven Thijs, Mototsugu Okushima, Jonathan Borremans, Philippe Jansen, Dimitri Linten, Mirko Scholz, Piet Wambacq, Guido Groeseneken
2007	—	`conf`	FinFET technology for analog and RF circuits. ICECS Bertrand Parvais, Vaidyanathan Subramanian, Abdelkarim Mercha, Morin Dehan, Piet Wambacq, Willy Sansen, Guido Groeseneken, Stefaan Decoutere
2007	J	`jnl`	Gate oxide breakdown in FET devices and circuits: From nanoscale physics to system-level reliability. Microelectron. Reliab. Ben Kaczer, Robin Degraeve, Philippe Roussel, Guido Groeseneken
2007	J	`jnl`	NBTI reliability of Ni FUSI/HfSiON gates: Effect of silicide phase. Microelectron. Reliab. A. Shickova, Ben Kaczer, Anabela Veloso, Marc Aoulaiche, M. Houssa, Herman E. Maes, Guido Groeseneken, J. A. Kittl
2007	J	`jnl`	Negative bias temperature instabilities in HfSiO(N)-based MOSFETs: Electrical characterization and modeling. Microelectron. Reliab. M. Houssa, Marc Aoulaiche, Stefan De Gendt, Guido Groeseneken, Marc M. Heyns
2007	J	`jnl`	Reliability screening of high-k dielectrics based on voltage ramp stress. Microelectron. Reliab. A. Kerber, Luigi Pantisano, Anabela Veloso, Guido Groeseneken, Martin Kerber
2007	J	`jnl`	Transient voltage overshoot in TLP testing - Real or artifact? Microelectron. Reliab. David Trémouilles, Steven Thijs, Philippe Roussel, M. I. Natarajan, Vesselin K. Vassilev, Guido Groeseneken
2006	J	`jnl`	FinFET and MOSFET preliminary comparison of gate oxide reliability. Microelectron. Reliab. Raul Fernández, Rosana Rodríguez, Montserrat Nafría, Xavier Aymerich, Ben Kaczer, Guido Groeseneken
2006	J	`jnl`	Implementation of plug-and-play ESD protection in 5.5GHz 90nm RF CMOS LNAs - Concepts, constraints and solutions. Microelectron. Reliab. Steven Thijs, M. Natarajan Iyer, Dimitri Linten, Wutthinan Jeamsaksiri, T. Daenen, Robin Degraeve, Andries J. Scholten, Stefaan Decoutere, Guido Groeseneken
2005	J	`jnl`	ESD circuit model based protection network optimisation for extended-voltage NMOS drivers. Microelectron. Reliab. Vesselin K. Vassilev, Vladislav A. Vashchenko, Philippe Jansen, Guido Groeseneken, Marcel ter Beek
2005	J	`jnl`	ESD-RF co-design methodology for the state of the art RF-CMOS blocks. Microelectron. Reliab. Vesselin K. Vassilev, Steven Thijs, P. L. Segura, Piet Wambacq, Paul Leroux, Guido Groeseneken, M. I. Natarajan, Herman E. Maes, Michiel Steyaert
2005	J	`jnl`	Layout dependency induced deviation from Poisson area scaling in BEOL dielectric reliability. Microelectron. Reliab. Yunlong Li, Zsolt Tökei, Philippe Roussel, Guido Groeseneken, Karen Maex
2005	—	`conf`	RF ESD protection strategies - the design and performance trade-off challenges. CICC Philippe Jansen, Steven Thijs, Dimitri Linten, M. I. Natarajan, Vesselin K. Vassilev, Mingxu Liu, Ann Concannon, David Trémouilles, Takeshi Nakaie, Masanori Sawada, Vladislav A. Vashchenko, Marcel ter Beek, Takumi Hasebe, Stefaan Decoutere, Guido Groeseneken
2004	J	`jnl`	A CAD assisted design and optimisation methodology for over-voltage ESD protection circuits. Microelectron. Reliab. Vesselin K. Vassilev, Vladislav A. Vashchenko, Philippe Jansen, B.-J. Choi, Ann Concannon, J.-J. Yang, Guido Groeseneken, M. I. Natarajan, Marcel ter Beek, Peter Hopper, Michiel Steyaert, Herman E. Maes
2004	J	`jnl`	Evidence for source side injection hot carrier effects on lateral DMOS transistors. Microelectron. Reliab. Stefano Aresu, Ward De Ceuninck, Geert Van den Bosch, Guido Groeseneken, Peter Moens, Jean Manca, D. Wojciechowski, P. Gassot
2003	J	`jnl`	High frequency characterization and modelling of the parasitic RC performance of two terminal ESD CMOS protection devices. Microelectron. Reliab. Vesselin K. Vassilev, Snezana Jenei, Guido Groeseneken, Rafael Venegas, Steven Thijs, Vincent De Heyn, M. Natarajan Iyer, Michiel Steyaert, Herman E. Maes
2002	J	`jnl`	Analysis and modeling of a digital CMOS circuit operation and reliability after gate oxide breakdown: a case study. Microelectron. Reliab. Ben Kaczer, Robin Degraeve, Mahmoud Rasras, An De Keersgieter, K. Van de Mieroop, Guido Groeseneken
2002	J	`jnl`	Significance of the failure criterion on transmission line pulse testing. Microelectron. Reliab. Bart Keppens, Vincent De Heyn, M. Natarajan Iyer, Vesselin K. Vassilev, Guido Groeseneken
2002	J	`jnl`	Statistical aspects of the degradation of LDD nMOSFETs. Microelectron. Reliab. E. Andries, R. Dreesen, Kris Croes, Ward De Ceuninck, Luc De Schepper, Guido Groeseneken, K. F. Lo, Marc D'Olieslaeger, Jan D'Haen
2001	J	`jnl`	A new degradation model and lifetime extrapolation technique for lightly doped drain nMOSFETs under hot-carrier degradation. Microelectron. Reliab. R. Dreesen, Kris Croes, Jean Manca, Ward De Ceuninck, Luc De Schepper, A. Pergoot, Guido Groeseneken
2001	J	`jnl`	Influence of gate length on ESD-performance for deep submicron CMOS technology. Microelectron. Reliab. Karlheinz Bock, Bart Keppens, Vincent De Heyn, Guido Groeseneken, L. Y. Ching, A. Naem
1999	J	`jnl`	Cost-effective cleaning and high-quality thin gate oxides. IBM J. Res. Dev. Marc M. Heyns, Twan Bearda, Ingrid Cornelissen, Stefan De Gendt, Robin Degraeve, Guido Groeseneken, Conny Kenens, D. Martin Knotter, Lee M. Loewenstein, Paul W. Mertens, Sofie Mertens, Marc Meuris, Tanya Nigam, Marc Schaekers, Ivo Teerlinck, Wilfried Vandervorst, Rita Vos, Klaus Wolke
1998	J	`jnl`	Novel level-identifying circuit for flash multilevel memories. IEEE J. Solid State Circuits Donato Montanari, Jan Van Houdt, Guido Groeseneken, Herman E. Maes
1989	J	`jnl`	Analysis and modeling of on-chip high-voltage generator circuits for use in EEPROM circuits. IEEE J. Solid State Circuits Johan S. Witters, Guido Groeseneken, Herman E. Maes