Guangxi Hu

15 papers Journal 7Unranked 8
YearRankTypeTitle / Venue / Authors
2026 J jnl
A compact bias-dependent body resistance model for partially depleted silicon-on-insulator MOSFETs.
Microelectron. J.
Tianye Yu, Gongteng Xiao, Yudi Zhao, Shiyou Chen, Guangxi Hu, Ye Lu
2025 J jnl
An efficient surface-potential-based compact model for dynamically depleted silicon-on-insulator MOSFETs.
Microelectron. J.
Tianye Yu, Gongteng Xiao, Yudi Zhao, Guangxi Hu, Hongtao Xu, Ye Lu
2025 — conf
Comprehensive Modeling and Investigation of Intrinsic Variation Source Fluctuation in 2D-Layered Thin Film Transistors.
IRPS
Tao Du, Wei Zhang, Xuanyao Fong, Guangxi Hu, Peng Zhou, Ye Lu
2023 J jnl
Knowledge-based neural network SPICE modeling for MOSFETs and its application on 2D material field-effect transistors.
Sci. China Inf. Sci.
Guodong Qi, Xinyu Chen, Guangxi Hu, Peng Zhou, Wenzhong Bao, Ye Lu
2022 — conf
Hand Gesture Recognition Using IR-UWB Radar with Spiking Neural Networks.
AICAS
Wang Shule, Yulong Yan, Haoming Chu, Guangxi Hu, Zhi Zhang, Zhuo Zou, Lirong Zheng
2019 — conf
A GaSb/In0.4Ga0.6As Heterojunction Z-Shaped Tunnel Field-Effect Transistor with High Performance.
ASICON
Jiarui Bao, Shuyan Hu, Guangxi Hu, Laigui Hu, Ran Liu, Lirong Zheng
2017 — conf
Analytical models for channel potential and drain current in AlGaN/GaN HEMT devices.
ASICON
Haisheng Qian, Guangxi Hu, Laigui Hu, Xing Zhou, Ran Liu, Li-Rong Zheng
2016 J jnl
Analytical models for channel potential, threshold voltage, and subthreshold swing of junctionless triple-gate FinFETs.
Microelectron. J.
Guangxi Hu, Shuyan Hu, Jianhua Feng, Ran Liu, Lingli Wang, Li-Rong Zheng
2015 — conf
Analytical models for threshold voltage, drain induced barrier lowering effect of junctionless triple-gate FinFETs.
ASICON
Guangxi Hu, Shuyan Hu, Jianhua Feng, Ran Liu, Lingli Wang, Li-Rong Zheng
2013 — conf
Analytic models for electric potential and subthreshold swing of the dual-material double-gate MOSFET.
ASICON
Ping Xiang, Zhihao Ding, Guangxi Hu, Hui Chol Ri, Ran Liu, Lingli Wang, Xing Zhou
2012 J jnl
Quantum mechanical effects on the threshold voltage of surrounding-gate MOSFETs.
Microelectron. J.
Guanghui Mei, Peicheng Li, Guangxi Hu, Ran Liu, Lingli Wang, Tingao Tang
2011 J jnl
An analytic model for channel potential and subthreshold swing of the symmetric and asymmetric double-gate MOSFETs.
Microelectron. J.
Zhihao Ding, Guangxi Hu, Jinglun Gu, Ran Liu, Lingli Wang, Tingao Tang
2011 — conf
Effects of unintended dopants on I-V characteristics of the double-gate MOSFETs, a simulation study.
ASICON
Peicheng Li, Guanghui Mei, Guangxi Hu, Ran Liu, Tingao Tang
2011 J jnl
Electric potential and threshold voltage models for double-gate Schottky-barrier source/drain MOSFETs.
Microelectron. J.
Peicheng Li, Guangxi Hu, Ran Liu, Tingao Tang
2011 — conf
Quantum mechanical effects on the threshold voltage of the evenly doped surrounding-gate MOSFETs.
ASICON
Guanghui Mei, Peicheng Li, Guangxi Hu, Ran Liu, Tingao Tang