Giuseppe Currò

16 papers Journal 15Unranked 1
YearRankTypeTitle / Venue / Authors
2024 — conf
Avatar Surgeon, Digital Pathology and Telementoring: SICE New Technology and Training Research Group Experience.
XR (2)
Michele Ammendola, Giuseppe Massimiliano De Luca, Francesca Vescio, Nicola de'Angelis, Valeria Zuccalà, Andrea Balla, Umberto Bracale, Ludovica Guerriero, Giovanni Laracca, Vinicio Mosca, Domenico Spoletini, Monica Ortenzi, Diego Cuccurullo, Mario Testini, Giuseppe Navarra, Gabriele Anania, Pietro Mascagni, Silvia Curcio, Giuseppe Currò, Mohanad Al Ansari
2011 J jnl
A new test methodology for an exhaustive study of single-event-effects on power MOSFETs.
Microelectron. Reliab.
Giovanni Busatto, D. Bisello, Giuseppe Currò, Piero Giubilato, Francesco Iannuzzo, S. Mattiazzo, D. Pantano, Annunziata Sanseverino, Luca Silvestrin, M. Tessaro, Francesco Velardi, Jeffery Wyss
2010 J jnl
Experimental study and numerical investigation on the formation of single event gate damages induced on medium voltage power MOSFET.
Microelectron. Reliab.
Giovanni Busatto, Giuseppe Currò, Francesco Iannuzzo, Alberto Porzio, Annunziata Sanseverino, Francesco Velardi
2009 J jnl
Experimental study about gate oxide damages in patterned MOS capacitor irradiated with heavy ions.
Microelectron. Reliab.
Giovanni Busatto, Giuseppe Currò, Francesco Iannuzzo, Alberto Porzio, Annunziata Sanseverino, Francesco Velardi
2008 J jnl
Experimental evidence of "latent gate oxide damages" in medium voltage power MOSFET as a result of heavy ions exposure.
Microelectron. Reliab.
Giovanni Busatto, Giuseppe Currò, Francesco Iannuzzo, Alberto Porzio, Annunziata Sanseverino, Francesco Velardi
2007 J jnl
Carrier trapping in thin N
Microelectron. Reliab.
Giuseppe Currò, Marco Camalleri, Denise Calì, Francesca Monforte, Fortunato Neri
2007 J jnl
Evaluation of the generation mechanisms at surface and in the bulk of the silicon by current transient technique.
Microelectron. Reliab.
Giacomo Barletta, Giuseppe Currò
2007 J jnl
Interface states and traps in thin N
Microelectron. Reliab.
Giuseppe Currò, Marco Camalleri, Denise Calì, Francesca Monforte, Fortunato Neri
2007 J jnl
Nitrogen bonding configurations near the oxynitride/silicon interface after oxynitridation in N
Microelectron. Reliab.
Francesca Monforte, Marco Camalleri, Denise Calì, Giuseppe Currò, Enza Fazio, Fortunato Neri
2007 J jnl
Total ionizing dose reliability of thin SiO
Microelectron. Reliab.
Alessandra Cascio, Giuseppe Currò, A. Cavagnoli
2006 J jnl
Experimental study of power MOSFET's gate damage in radiation environment.
Microelectron. Reliab.
Giovanni Busatto, Francesco Iannuzzo, Alberto Porzio, Annunziata Sanseverino, Francesco Velardi, Giuseppe Currò
2005 J jnl
Experimental and Numerical investigation about SEB/SEGR of Power MOSFET.
Microelectron. Reliab.
Giovanni Busatto, Alberto Porzio, Francesco Velardi, Francesco Iannuzzo, Annunziata Sanseverino, Giuseppe Currò
2005 J jnl
Junction leakage current degradation under high temperature reverse-bias stress induced by band-defect-band tunnelling in power VDMOS.
Microelectron. Reliab.
Giacomo Barletta, Giuseppe Currò
2004 J jnl
The Role of the Parasitic BJT Parameters on the Reliability of New Generation Power MOSFET during Heavy Ion Exposure.
Microelectron. Reliab.
Francesco Velardi, Francesco Iannuzzo, Giovanni Busatto, Alberto Porzio, Annunziata Sanseverino, Giuseppe Currò, Alessandra Cascio, Ferruccio Frisina
2003 J jnl
Reliability of Medium Blocking Voltage Power VDMOSFET in Radiation Environment.
Microelectron. Reliab.
Francesco Velardi, Francesco Iannuzzo, Giovanni Busatto, Jeffery Wyss, Annunziata Sanseverino, A. Candelori, Giuseppe Currò, Alessandra Cascio, Ferruccio Frisina
2002 J jnl
Growth process and chemical characterization of an ultrathin phosphate film grafted onto Al-alloy metallization surfaces relevant to microelectronic devices reliability.
Microelectron. Reliab.
Giuseppe Currò, R. Greco, Antonino Scandurra