Giovanni Verzellesi

12 papers Journal 5Unranked 7
YearRankTypeTitle / Venue / Authors
2021 — conf
Investigation on VTH and RON Slow/Fast Drifts in SiC MOSFETs.
IRPS
Marcello Cioni, Alessandro Bertacchini, Alessandro Mucci, Giovanni Verzellesi, Paolo Pavan, Alessandro Chini
2020 — conf
Characterization of a premixed flat combustor through plasma current measurements.
I2MTC
Luca Pintori, Giovanni Verzellesi, Luigi Rovati
2020 — conf
Trap Dynamics Model Explaining the RON Stress/Recovery Behavior in Carbon-Doped Power AlGaN/GaN MOS-HEMTs.
IRPS
Nicolò Zagni, Alessandro Chini, Francesco Maria Puglisi, Paolo Pavan, Matteo Meneghini, Gaudenzio Meneghesso, Enrico Zanoni, Giovanni Verzellesi
2017 — conf
Variability and sensitivity to process parameters variations in InGaAs dual-gate ultra-thin body MOSFETs: A scaling perspective.
PATMOS
Nicolo Zagni, Francesco Maria Puglisi, Giovanni Verzellesi, Paolo Pavan
2015 — conf
A Wireless Personal Sensor Node for Real Time Dosimetry of Interventional Radiology Operators.
ApplePies
Daniel Magalotti, Pisana Placidi, Stefania Fabiani, Lucia Bissi, Massimiliano Paolucci, Andrea Scorzoni, Andrea Calandra, Giovanni Verzellesi, Leonello Servoli
2015 — conf
Modeling challenges for high-efficiency visible light-emitting diodes.
RTSI
Francesco Bertazzi, Stefano Dominici, Marco Mandurrino, Dipika Robidas, Xiangyu Zhou, Marco Vallone, Marco Calciati, Pierluigi Debernardi, Giovanni Verzellesi, Matteo Meneghini, Enrico Bellotti, Giovanni Ghione, Michele Goano
2014 — conf
Breakdown investigation in GaN-based MIS-HEMT devices.
ESSDERC
Fabio Alessio Marino, Davide Bisi, Matteo Meneghini, Giovanni Verzellesi, Enrico Zanoni, Marleen Van Hove, Shuzhen You, Stefaan Decoutere, Denis Marcon, Steve Stoffels, Nicolo Ronchi, Gaudenzio Meneghesso
2014 J jnl
ESD degradation and robustness of RGB LEDs and modules: An investigation based on combined electrical and optical measurements.
Microelectron. Reliab.
Matteo Meneghini, Simone Vaccari, Matteo Dal Lago, Stefano Marconi, Marco Barbato, Nicola Trivellin, Alessio Griffoni, Alberto Alfier, Giovanni Verzellesi, Gaudenzio Meneghesso, Enrico Zanoni
2010 J jnl
Analysis of current collapse effect in AlGaN/GaN HEMT: Experiments and numerical simulations.
Microelectron. Reliab.
Mustapha Faqir, Mohsine Bouya, Nathalie Malbert, Nathalie Labat, D. Carisetti, Benoit Lambert, Giovanni Verzellesi, Fausto Fantini
2007 J jnl
Characterization and analysis of trap-related effects in AlGaN-GaN HEMTs.
Microelectron. Reliab.
Mustapha Faqir, Giovanni Verzellesi, Fausto Fantini, Francesca Danesin, Fabiana Rampazzo, Gaudenzio Meneghesso, Enrico Zanoni, Anna Cavallini, Antonio Castaldini, Nathalie Labat, André Touboul, Christian Dua
2005 J jnl
DC-to-RF dispersion effects in GaAs- and GaN-based heterostructure FETs: performance and reliability issues.
Microelectron. Reliab.
Giovanni Verzellesi, Gaudenzio Meneghesso, Alessandro Chini, Enrico Zanoni, Claudio Canali
2001 J jnl
Gate-lag effects in AlGaAs/GaAs power HFET's.
Microelectron. Reliab.
Mattia Borgarino, Giovanna Sozzi, Andrea Mazzanti, Giovanni Verzellesi