Giovanni Busatto

35 papers Journal 35
YearRankTypeTitle / Venue / Authors
2018 J jnl
Failure analysis of 650 V enhancement mode GaN HEMT after short circuit tests.
Microelectron. Reliab.
Carmine Abbate, Giovanni Busatto, Annunziata Sanseverino, D. Tedesco, Francesco Velardi
2018 J jnl
Measure of high frequency input impedance to study the instability of power devices in short circuit.
Microelectron. Reliab.
Carmine Abbate, Giovanni Busatto, Annunziata Sanseverino, D. Tedesco, Francesco Velardi
2018 J jnl
Progressive drain damage in SiC power MOSFETs exposed to ionizing radiation.
Microelectron. Reliab.
Carmine Abbate, Giovanni Busatto, S. Mattiazzo, Annunziata Sanseverino, Luca Silvestrin, D. Tedesco, Francesco Velardi
2017 J jnl
Experimental study of the instabilities observed in 650 V enhancement mode GaN HEMT during short circuit.
Microelectron. Reliab.
Carmine Abbate, Giovanni Busatto, Annunziata Sanseverino, D. Tedesco, Francesco Velardi
2015 J jnl
Experimental study of Single Event Effects induced by heavy ion irradiation in enhancement mode GaN power HEMT.
Microelectron. Reliab.
Carmine Abbate, Giovanni Busatto, Francesco Iannuzzo, S. Mattiazzo, Annunziata Sanseverino, Luca Silvestrin, D. Tedesco, Francesco Velardi
2014 J jnl
Thermal damage in SiC Schottky diodes induced by SE heavy ions.
Microelectron. Reliab.
Carmine Abbate, Giovanni Busatto, Paolo Cova, Nicola Delmonte, Francesco Giuliani, Francesco Iannuzzo, Annunziata Sanseverino, Francesco Velardi
2014 J jnl
Turn-off instabilities in large area IGBTs.
Microelectron. Reliab.
Carmine Abbate, Francesco Iannuzzo, Giovanni Busatto, Annunziata Sanseverino, Francesco Velardi, Cesare Ronsisvalle, James Victory
2013 J jnl
Scattering parameter approach applied to the stability analysis of power IGBTs in short circuit.
Microelectron. Reliab.
Carmine Abbate, Giovanni Busatto, Francesco Iannuzzo, Cesare Ronsisvalle, Annunziata Sanseverino, Francesco Velardi
2013 J jnl
Thermal instability during short circuit of normally-off AlGaN/GaN HFETs.
Microelectron. Reliab.
Carmine Abbate, Francesco Iannuzzo, Giovanni Busatto
2012 J jnl
Behavior of power MOSFETs during heavy ions irradiation performed after γ-rays exposure.
Microelectron. Reliab.
Giovanni Busatto, Valentina De Luca, Francesco Iannuzzo, Annunziata Sanseverino, Francesco Velardi
2012 J jnl
Reliability oriented design of power supplies for high energy physics applications.
Microelectron. Reliab.
Stefania Baccaro, Giovanni Busatto, Mauro Citterio, Paolo Cova, Nicola Delmonte, Francesco Iannuzzo, Agostino Lanza, Marco Riva, Annunziata Sanseverino, Giorgio Spiazzi
2012 J jnl
Unclamped repetitive stress on 1200 V normally-off SiC JFETs.
Microelectron. Reliab.
Carmine Abbate, Giovanni Busatto, Francesco Iannuzzo
2011 J jnl
A new test methodology for an exhaustive study of single-event-effects on power MOSFETs.
Microelectron. Reliab.
Giovanni Busatto, D. Bisello, Giuseppe Currò, Piero Giubilato, Francesco Iannuzzo, S. Mattiazzo, D. Pantano, Annunziata Sanseverino, Luca Silvestrin, M. Tessaro, Francesco Velardi, Jeffery Wyss
2011 J jnl
Operation of SiC normally-off JFET at the edges of its safe operating area.
Microelectron. Reliab.
Carmine Abbate, Giovanni Busatto, Francesco Iannuzzo
2010 J jnl
Editorial.
Microelectron. Reliab.
Giovanni Busatto, Francesco Iannuzzo
2010 J jnl
Experimental study and numerical investigation on the formation of single event gate damages induced on medium voltage power MOSFET.
Microelectron. Reliab.
Giovanni Busatto, Giuseppe Currò, Francesco Iannuzzo, Alberto Porzio, Annunziata Sanseverino, Francesco Velardi
2010 J jnl
IGBT RBSOA non-destructive testing methods: Analysis and discussion.
Microelectron. Reliab.
Carmine Abbate, Giovanni Busatto, Francesco Iannuzzo
2009 J jnl
Experimental study about gate oxide damages in patterned MOS capacitor irradiated with heavy ions.
Microelectron. Reliab.
Giovanni Busatto, Giuseppe Currò, Francesco Iannuzzo, Alberto Porzio, Annunziata Sanseverino, Francesco Velardi
2009 J jnl
Instable mechanisms during unclamped operation of high power IGBT modules.
Microelectron. Reliab.
Giovanni Busatto, Carmine Abbate, Francesco Iannuzzo, P. Cristofaro
2008 J jnl
Experimental evidence of "latent gate oxide damages" in medium voltage power MOSFET as a result of heavy ions exposure.
Microelectron. Reliab.
Giovanni Busatto, Giuseppe Currò, Francesco Iannuzzo, Alberto Porzio, Annunziata Sanseverino, Francesco Velardi
2008 J jnl
IGBT modules robustness during turn-off commutation.
Microelectron. Reliab.
Giovanni Busatto, Carmine Abbate, B. Abbate, Francesco Iannuzzo
2007 J jnl
The robustness of series-connected high power IGBT modules.
Microelectron. Reliab.
Carmine Abbate, Giovanni Busatto, Luigi Fratelli, Francesco Iannuzzo, B. Cascone, Roberta Manzo
2006 J jnl
Experimental study of power MOSFET's gate damage in radiation environment.
Microelectron. Reliab.
Giovanni Busatto, Francesco Iannuzzo, Alberto Porzio, Annunziata Sanseverino, Francesco Velardi, Giuseppe Currò
2006 J jnl
Investigation of MOSFET failure in soft-switching conditions.
Microelectron. Reliab.
Francesco Iannuzzo, Giovanni Busatto, Carmine Abbate
2006 J jnl
The high frequency behaviour of high voltage and current IGBT modules.
Microelectron. Reliab.
Carmine Abbate, Giovanni Busatto, Luigi Fratelli, Francesco Iannuzzo
2005 J jnl
Experimental and Numerical investigation about SEB/SEGR of Power MOSFET.
Microelectron. Reliab.
Giovanni Busatto, Alberto Porzio, Francesco Velardi, Francesco Iannuzzo, Annunziata Sanseverino, Giuseppe Currò
2004 J jnl
Analysis and optimisation through innovative driving strategy of high power IGBT performances/EMI reduction trade-off for converter systems in railway applications.
Microelectron. Reliab.
Giovanni Busatto, Luigi Fratelli, Carmine Abbate, Roberta Manzo, Francesco Iannuzzo
2004 J jnl
The Role of the Parasitic BJT Parameters on the Reliability of New Generation Power MOSFET during Heavy Ion Exposure.
Microelectron. Reliab.
Francesco Velardi, Francesco Iannuzzo, Giovanni Busatto, Alberto Porzio, Annunziata Sanseverino, Giuseppe Currò, Alessandra Cascio, Ferruccio Frisina
2003 J jnl
Experimental study of charge generation mechanisms in power MOSFETs due to energetic particle impact
Microelectron. Reliab.
Francesco Velardi, Francesco Iannuzzo, Giovanni Busatto, Jeffery Wyss, A. Candelori
2003 J jnl
MAGFET based current sensing for power integrated circuit.
Microelectron. Reliab.
Giovanni Busatto, Roberto La Capruccia, Francesco Iannuzzo, Francesco Velardi, Roberto Roncella
2003 J jnl
Non-Destructive Detection of Current Distribution in Power Modules based on Pulsed Magnetic Measurement.
Microelectron. Reliab.
Giovanni Busatto, Francesco Iannuzzo, Francesco Velardi, M. Valentino, Giampiero Pepe
2003 J jnl
Reliability of Medium Blocking Voltage Power VDMOSFET in Radiation Environment.
Microelectron. Reliab.
Francesco Velardi, Francesco Iannuzzo, Giovanni Busatto, Jeffery Wyss, Annunziata Sanseverino, A. Candelori, Giuseppe Currò, Alessandra Cascio, Ferruccio Frisina
2002 J jnl
Non-destructive high temperature characterisation of high-voltage IGBTs.
Microelectron. Reliab.
Giovanni Busatto, B. Cascone, Luigi Fratelli, M. Balsamo, Francesco Iannuzzo, Francesco Velardi
2002 J jnl
The Reliability of New Generation Power MOSFETs in Radiation Environment.
Microelectron. Reliab.
Francesco Velardi, Francesco Iannuzzo, Giovanni Busatto, Jeffery Wyss, A. Kaminksy
2001 J jnl
Non-destructive tester for single event burnout of power diodes.
Microelectron. Reliab.
Giovanni Busatto, Francesco Iannuzzo, Francesco Velardi, Jeffery Wyss