Gilles Reimbold

18 papers Journal 8Unranked 10
YearRankTypeTitle / Venue / Authors
2018 — conf
A new method for quickly evaluating reversible and permanent components of the BTI degradation.
IRPS
Xavier Garros, Alexandre Subirats, Gilles Reimbold, Fred Gaillard, Cheikh Diouf, X. Federspiel, Vincent Huard, M. Rafik
2018 J jnl
Characterization and modeling of dynamic variability induced by BTI in nano-scaled transistors.
Microelectron. Reliab.
Xavier Garros, Antoine Laurent, Alexandre Subirats, X. Federspiel, E. Vincent, Gilles Reimbold
2017 J jnl
Harmonic distortion analysis of triple gate SOI nanowire MOSFETS down to 100 K.
Microelectron. Reliab.
Bruna Cardoso Paz, Renan Trevisoli Doria, Mikaël Cassé, Sylvain Barraud, Gilles Reimbold, Maud Vinet, Olivier Faynot, Marcelo Antonio Pavanello
2017 — conf
On the understanding of cathode related trapping effects in GaN-on-Si Schottky diodes.
ESSDERC
William Vandendaele, Thomas Lorin, Romain Gwoziecki, Yannick Baines, Jérome Biscarrat, Marie-Anne Jaud, Charlotte Gillot, Matthew Charles, Marc Plissonnier, Gilles Reimbold
2016 — conf
Analog performance of strained SOI nanowires down to 10K.
ESSDERC
Bruna Cardoso Paz, Marcelo Antonio Pavanello, Mikaël Cassé, Sylvain Barraud, Gilles Reimbold, Maud Vinet, Olivier Faynot
2016 J jnl
Drain current model for short-channel triple gate junctionless nanowire transistors.
Microelectron. Reliab.
Bruna Cardoso Paz, Mikaël Cassé, Sylvain Barraud, Gilles Reimbold, Olivier Faynot, F. Avila-Herrera, Antonio Cerdeira, Marcelo Antonio Pavanello
2015 — conf
Effective work function engineering by sacrificial lanthanum diffusion on HfON-based 14 nm NFET devices.
ESSDERC
Carlos Suarez-Segovia, Charles Leroux, Florian Domengie, Karen Dabertrand, Vincent Joseph, Giovanni Romano, Pierre Caubet, Stephane Zoll, Olivier Weber, Gérard Ghibaudo, Gilles Reimbold, Michel Haond
2015 — conf
Performance and reliability of strained SOI transistors for advanced planar FDSOI technology.
IRPS
Guillaume Besnard, Xavier Garros, Alexandre Subirats, François Andrieu, X. Federspiel, M. Rafik, Walter Schwarzenbach, Gilles Reimbold, Olivier Faynot, Sorin Cristoloveanu
2015 J jnl
Physically-based extraction methodology for accurate MOSFET degradation assessment.
Microelectron. Reliab.
Giulio Torrente, Jean Coignus, Sophie Renard, Alexandre Vernhet, Gilles Reimbold, David Roy, Gérard Ghibaudo
2015 — conf
Strain effect on mobility in nanowire MOSFETs down to 10nm width: Geometrical effects and piezoresistive model.
ESSDERC
J. Pelloux-Prayer, Mikaël Cassé, François Triozon, Sylvain Barraud, Yann-Michel Niquet, J.-L. Rouviere, Olivier Faynot, Gilles Reimbold
2014 — conf
Superior performance and Hot Carrier reliability of Strained FDSOI nMOSFETs for advanced CMOS technology nodes.
ESSDERC
Guillaume Besnard, Xavier Garros, François Andrieu, Phuong Nguyen, William van den Daele, Patrick Reynaud, Walter Schwarzenbach, Daniel Delprat, Konstantin Bourdelle, Gilles Reimbold, Sorin Cristoloveanu
2013 — conf
Influence of device scaling on low-frequency noise in SOI tri-gate N- and p-type Si nanowire MOSFETs.
ESSDERC
Masahiro Koyama, Mikaël Cassé, Remi Coquand, Sylvain Barraud, Gérard Ghibaudo, Hiroshi Iwai, Gilles Reimbold
2012 — conf
Carbon-doped Ge2Sb2Te5 phase-change memory devices featuring reduced RESET current and power consumption.
ESSDERC
Quentin Hubert, Carine Jahan, Alain Toffoli, Gabriele Navarro, S. Chandrashekar, Pierre Noe, Veronique Sousa, Luca Perniola, J.-F. Nodin, A. Persico, S. Maitrejean, A. Roule, E. Henaff, M. Tessaire, P. Zuliani, Roberto Annunziata, Gilles Reimbold, G. Pananakakis, Barbara De Salvo
2012 — conf
Study of carrier transport in strained and unstrained SOI tri-gate and omega-gate Si-nanowire MOSFETs.
ESSDERC
Masahiro Koyama, Mikaël Cassé, Remi Coquand, Sylvain Barraud, Hiroshi Iwai, Gérard Ghibaudo, Gilles Reimbold
2009 J jnl
Process dependence of BTI reliability in advanced HK MG stacks.
Microelectron. Reliab.
Xavier Garros, Mikaël Cassé, M. Rafik, Claire Fenouillet-Béranger, Gilles Reimbold, François Martin, Claudia Wiemer, F. Boulanger
2007 J jnl
Accurate determination of flat band voltage in advanced MOS structure.
Microelectron. Reliab.
Charles Leroux, Gérard Ghibaudo, Gilles Reimbold
2007 J jnl
Initial and PBTI-induced traps and charges in Hf-based oxides/TiN stacks.
Microelectron. Reliab.
Gilles Reimbold, Jérôme Mitard, Xavier Garros, Charles Leroux, Gérard Ghibaudo, François Martin
2001 J jnl
Plasma charging damage mechanisms and impact on new technologies.
Microelectron. Reliab.
Gilles Reimbold, T. Poiroux