Gilles Gasiot

13 papers C 1Journal 5Unranked 7
YearRankTypeTitle / Venue / Authors
2017 J jnl
Multi-Poisson process analysis of real-time soft-error rate measurements in bulk 65 nm and 40 nm SRAMs.
Microelectron. Reliab.
Soilihi Moindjie, Jean-Luc Autran, Daniela Munteanu, Gilles Gasiot, Philippe Roche
2016 — conf
30% static power improvement on ARM Cortex
ESSCIRC
Fady Abouzeid, Christophe Bernicot, Sylvain Clerc, Jean-Marc Daveau, Gilles Gasiot, Daniel Noblet, Dimitri Soussan, Philippe Roche
2015 — conf
28nm FD-SOI technology and design platform for sub-10pJ/cycle and SER-immune 32bits processors.
ESSCIRC
Fady Abouzeid, Sylvain Clerc, Cyril Bottoni, Benjamin Coeffic, Jean-Marc Daveau, Damien Croain, Gilles Gasiot, Dimitri Soussan, Philippe Roche
2015 J jnl
ASTEP (2005-2015): Ten years of soft error and atmospheric radiation characterization on the Plateau de Bure.
Microelectron. Reliab.
Jean-Luc Autran, Daniela Munteanu, Soilihi Moindjie, Tarek Saad Saoud, S. Sauze, Gilles Gasiot, Philippe Roche
2015 — conf
Alpha soft error rate of FDSOI 28 nm SRAMs: Experimental testing and simulation analysis.
IRPS
Victor Malherbe, Gilles Gasiot, Dimitri Soussan, Aurelien Patris, Jean-Luc Autran, Philippe Roche
2015 — conf
Frequency and voltage effects on SER on a 65nm Sparc-V8 microprocessor under radiation test.
IRPS
Cyril Bottoni, Benjamin Coeffic, Jean-Marc Daveau, Gilles Gasiot, Fady Abouzeid, Sylvain Clerc, Lirida A. B. Naviner, Philippe Roche
2015 — conf
Muons and thermal neutrons SEU characterization of 28nm UTBB FD-SOI and Bulk eSRAMs.
IRPS
Gilles Gasiot, Dimitri Soussan, Jean-Luc Autran, Victor Malherbe, Philippe Roche
2014 J jnl
Particle Monte Carlo modeling of single-event transient current and charge collection in integrated circuits.
Microelectron. Reliab.
Jean-Luc Autran, Maximilien Glorieux, Daniela Munteanu, Sylvain Clerc, Gilles Gasiot, Philippe Roche
2014 J jnl
Real-time soft-error rate measurements: A review.
Microelectron. Reliab.
Jean-Luc Autran, Daniela Munteanu, Philippe Roche, Gilles Gasiot
2012 — conf
A 0.32V, 55fJ per bit access energy, CMOS 65nm bit-interleaved SRAM with radiation Soft Error tolerance.
ICICDT
Sylvain Clerc, Fady Abouzeid, Gilles Gasiot, David Gauthier, Dimitri Soussan, Philippe Roche
2012 — conf
A 65nm SRAM achieving 250mV retention and 350mV, 1MHz, 55fJ/bit access energy, with bit-interleaved radiation Soft Error tolerance.
ESSCIRC
Sylvain Clerc, Fady Abouzeid, Gilles Gasiot, David Gauthier, Philippe Roche
2010 J jnl
Soft-errors induced by terrestrial neutrons and natural alpha-particle emitters in advanced memory circuits at ground level.
Microelectron. Reliab.
Jean-Luc Autran, Daniela Munteanu, Philippe Roche, Gilles Gasiot, S. Martinie, S. Uznanski, S. Sauze, S. Semikh, Evgeny Yakushev, S. Rozov, Pia Loaiza, G. Warot, M. Zampaolo
2008 C conf
Growing Interest of Advanced Commercial CMOS Technologies for Space and Medical Applications. Illustration with a New Nano-Power and Radiation-Hardened SRAM in 130nm CMOS.
IOLTS
Philippe Roche, Mark Lysinger, Gilles Gasiot, Jean-Marc Daveau, Mehdi Zamanian, Pierre Dautriche