Gerhard Rzepa - RankMe

17 papers C 1Journal 3Unranked 13

Year	Rank	Type	Title / Venue / Authors
2024	—	`conf`	TCAD for Circuits and Systems: Process Emulation, Parasitics Extraction, Self-Heating. BCICTS Zlatan Stanojevic, Xaver Klemenschits, Gerhard Rzepa, Ferdinand Mitterbauer, Christian Schleich, Franz Schanovsky, Oskar Baumgartner, Markus Karner
2022	—	`conf`	Co-integration Process Compatible Input/Output (I/O) Device Options for GAA Nanosheet Technology. ESSDERC Gautam Gaddemane, Krishna K. Bhuwalka, Philippe Matagne, Gerhard Rzepa, Maarten L. Van De Put, Sybren Santermans, Oskar Baumgartner, Hao Wu, Geert Hellings
2021	—	`conf`	1.5-nm Node Surrounding Gate Transistor (SGT)-SRAM Cell with Staggered Pillar and Self-Aligned Process for Gate, Bottom Contact, and Pillar. IMW Yisuo Li, Ken'ichi Kanazawa, Tetsuo Izawa, Koji Sakui, Georg Strof, Oskar Baumgartner, Gerhard Rzepa, Markus Karner, Zlatan Stanojevic, Nozomu Harada, Fujio Masuoka
2021	—	`conf`	A TCAD Compatible SONOS Trapping Layer Model for Accurate Programming Dynamics. IMW Franz Schanovsky, Devin Verreck, Antonio Arreghini, Gerhard Rzepa, Zlatan Stanojevic, Christian Kernstock, Oskar Baumgartner, Maarten Rosmeulen, Markus Karner
2021	—	`conf`	Reliability and Variability-Aware DTCO Flow: Demonstration of Projections to N3 FinFET and Nanosheet Technologies. IRPS Gerhard Rzepa, Markus Karner, Oskar Baumgartner, Georg Strof, Franz Schanovsky, Ferdinand Mitterbauer, Christian Kernstock, Hui-Wen Karner, Pieter Weckx, Geert Hellings, Dieter Claes, Zhicheng Wu, Yang Xiang, Thomas Chiarella, Bertrand Parvais, Jérôme Mitard, Jacopo Franco, Ben Kaczer, Dimitri Linten, Zlatan Stanojevic
2020	—	`conf`	Quantum Mechanical Charge Trap Modeling to Explain BTI at Cryogenic Temperatures. IRPS Jakob Michl, Alexander Grill, Dieter Claes, Gerhard Rzepa, Ben Kaczer, Dimitri Linten, Iuliana P. Radu, Tibor Grasser, Michael Waltl
2020	—	`conf`	The Mysterious Bipolar Bias Temperature Stress from the Perspective of Gate-Sided Hydrogen Release. IRPS Tibor Grasser, Ben Kaczer, Barry J. O'Sullivan, Gerhard Rzepa, Bernhard Stampfer, Michael Waltl
2019	—	`conf`	Accelerated Capture and Emission (ACE) Measurement Pattern for Efficient BTI Characterization and Modeling. IRPS Zhicheng Wu, Jacopo Franco, Dieter Claes, Gerhard Rzepa, Philippe J. Roussel, Nadine Collaert, Guido Groeseneken, Dimitri Linten, Tibor Grasser, Ben Kaczer
2019	—	`conf`	Gate-Stack Engineered NBTI Improvements in Highvoltage Logic-For-Memory High-ĸ/Metal Gate Devices. IRPS Barry J. O'Sullivan, Romain Ritzenthaler, Gerhard Rzepa, Z. Wu, E. Dentoni Litta, O. Richard, T. Conard, V. Machkaoutsan, Pierre Fazan, C. Kim, Jacopo Franco, Ben Kaczer, Tibor Grasser, Alessio Spessot, Dimitri Linten, N. Horiguchi
2018	J	`jnl`	A brief overview of gate oxide defect properties and their relation to MOSFET instabilities and device and circuit time-dependent variability. Microelectron. Reliab. Ben Kaczer, Jacopo Franco, Pieter Weckx, Philippe Roussel, Vamsi Putcha, Erik Bury, Marko Simicic, Adrian Vaisman Chasin, Dimitri Linten, Bertrand Parvais, Francky Catthoor, Gerhard Rzepa, Michael Waltl, Tibor Grasser
2018	—	`conf`	Characterization and physical modeling of the temporal evolution of near-interfacial states resulting from NBTI/PBTI stress in nMOS/pMOS transistors. IRPS Tibor Grasser, Bernhard Stampfer, Michael Waltl, Gerhard Rzepa, Karl Rupp, Franz Schanovsky, Gregor Pobegen, Katja Puschkarsky, Hans Reisinger, Barry J. O'Sullivan, Ben Kaczer
2018	J	`jnl`	Comphy - A compact-physics framework for unified modeling of BTI. Microelectron. Reliab. Gerhard Rzepa, Jacopo Franco, Barry J. O'Sullivan, A. Subirats, Marko Simicic, Geert Hellings, Pieter Weckx, Markus Jech, Theresia Knobloch, Michael Waltl, Philippe Roussel, Dimitri Linten, Ben Kaczer, Tibor Grasser
2018	J	`jnl`	Identification of oxide defects in semiconductor devices: A systematic approach linking DFT to rate equations and experimental evidence. Microelectron. Reliab. Wolfgang Goes, Yannick Wimmer, Al-Moatasem El-Sayed, Gerhard Rzepa, Markus Jech, Alexander L. Shluger, Tibor Grasser
2017	—	`conf`	Physical modeling of the hysteresis in M0S2 transistors. ESSDERC Theresia Knobloch, Gerhard Rzepa, Yury Yu. Illarionov, Michael Waltl, Franz Schanovsky, Markus Jech, Bernhard Stampfer, Marco M. Furchi, Thomas Muller, Tibor Grasser
2015	C	`conf`	Characterization and modeling of reliability issues in nanoscale devices. ISCAS Gerhard Rzepa, Wolfgang Goes, Ben Kaczer, Tibor Grasser
2015	—	`conf`	The defect-centric perspective of device and circuit reliability - From individual defects to circuits. ESSDERC Ben Kaczer, Jacopo Franco, Pieter Weckx, Philippe Roussel, Erik Bury, Moonju Cho, Robin Degraeve, Dimitri Linten, Guido Groeseneken, Halil Kukner, Praveen Raghavan, Francky Catthoor, Gerhard Rzepa, Wolfgang Gös, Tibor Grasser
2014	—	`conf`	Characterization and modeling of charge trapping: From single defects to devices. ICICDT Tibor Grasser, Gerhard Rzepa, Michael Waltl, Wolfgang Goes, Karina Rott, Gunnar Andreas Rott, Hans Reisinger, Jacopo Franco, Ben Kaczer