Gerhard Knoblinger

21 papers C 5Journal 4Unranked 12

Year	Rank	Type	Title / Venue / Authors
2021	J	`jnl`	A 12-b 16-GS/s RF-Sampling Capacitive DAC for Multi-Band Soft Radio Base-Station Applications With On-Chip Transmission-Line Matching Network in 16-nm FinFET. IEEE J. Solid State Circuits Daniel Gruber, Martin Clara, Ramón Sanchez-Perez, Yu-shan Wang, Christoph Duller, Gerald Rauter, Patrick Torta, Gerhard Knoblinger, Kamran Azadet
2018	—	`conf`	A 28nm Low-Voltage Digital Power-Amplifier for QAM-256 WIFI Applications in 0.5mm ICECS Antonio Passamani, Davide Ponton, Andreas Wolter, Gerhard Knoblinger, Andrea Bevilacqua
2017	—	`conf`	13.9 A 1.1V 28.6dBm fully integrated digital power amplifier for mobile and wireless applications in 28nm CMOS technology with 35% PAE. ISSCC Antonio Passamani, Davide Ponton, Edwin Thaller, Gerhard Knoblinger, Andrea Neviani, Andrea Bevilacqua
2015	—	`conf`	Analysis and design of a 1.1dB-IL third-order Matching Network for Switched-Capacitor PAs. NORCAS Antonio Passamani, Davide Ponton, Gerhard Knoblinger, Andrea Bevilacqua
2015	C	`conf`	Switched state-space model for a switched-capacitor power amplifier. ISCAS Stefan Trampitsch, Gerhard Knoblinger, Mario Huemer
2011	J	`jnl`	LC-VCO in the 3.3- to 4-GHz Band Implemented in 32-nm Low-Power CMOS Technology. IEEE Trans. Circuits Syst. II Express Briefs Davide Ponton, Gerhard Knoblinger, Andreas Roithmeier, Federico Cernoia, Marc Tiebout, Michael Fulde, Pierpaolo Palestri
2009	—	`conf`	Assessment of the impact of technology scaling on the performance of LC-VCOs. ESSCIRC Davide Ponton, Gerhard Knoblinger, Andreas Roithmeier, Marc Tiebout, Michael Fulde, Pierpaolo Palestri
2009	C	`conf`	Design of Low-Voltage Bandgap Reference Circuits in Multi-Gate CMOS Technologies. ISCAS Michael Fulde, Martin Wirnshofer, Gerhard Knoblinger, Doris Schmitt-Landsiedel
2009	J	`jnl`	Design of Ultra-Wideband Low-Noise Amplifiers in 45-nm CMOS Technology: Comparison Between Planar Bulk and SOI FinFET Devices. IEEE Trans. Circuits Syst. I Regul. Pap. Davide Ponton, Pierpaolo Palestri, David Esseni, Luca Selmi, Marc Tiebout, Bertrand Parvais, Domagoj Siprak, Gerhard Knoblinger
2008	C	`conf`	Design of UWB LNA in 45nm CMOS technology: Planar bulk vs. FinFET. ISCAS Davide Ponton, Pierpaolo Palestri, David Esseni, Luca Selmi, Marc Tiebout, Bertrand Parvais, Gerhard Knoblinger
2007	—	`conf`	A merged MuGFET and planar SOI process. SoCC Andrew Marshall, C. Rinn Cleavelin, Weize Xiong, Christian Pacha, Gerhard Knoblinger, Klaus Von Armin, Thomas Schulz, Klaus Schruefer, Ken Matthews, Wolfgang Molzer, Paul Patruno, Christian Russ
2007	—	`conf`	Advances in Multi-Gate MOSFET Circuit Design. ICECS Michael Fulde, Klaus von Arnim, Christian Pacha, Florian Bauer, Christian Russ, Domagoj Siprak, Wade Xiong, Andrew Marshall, C. Rinn Cleavelin, Klaus Schruefer, Doris Schmitt-Landsiedel, Gerhard Knoblinger
2007	—	`conf`	Analog design challenges and trade-offs using emerging materials and devices. ESSCIRC Michael Fulde, Abdelkarim Mercha, Cedric Gustin, Bertrand Parvais, Vaidyanathan Subramanian, Klaus von Arnim, Florian Bauer, Klaus Schruefer, Doris Schmitt-Landsiedel, Gerhard Knoblinger
2007	—	`conf`	Multi-Gate MOSFET Design. ISQED Gerhard Knoblinger
2007	—	`conf`	SUB-45nm Technology and Design Challenges. ISQED Gerhard Knoblinger, James W. Tschanz, Marcal Pol
2007	C	`conf`	Transient Variations in Emerging SOI Technologies: Modeling and Impact on Analog/Mixed-Signal Circuits. ISCAS Michael Fulde, Doris Schmitt-Landsiedel, Gerhard Knoblinger
2006	—	`conf`	Circuit design issues in multi-gate FET CMOS technologies. ISSCC Christian Pacha, Klaus von Arnim, Thomas Schulz, Weize Xiong, Michael Gostkowski, Gerhard Knoblinger, Andrew Marshall, Thomas Nirschl, Jörg Berthold, Christian Russ, Harald Gossner, Charvaka Duvvury, Paul Patruno, C. Rinn Cleavelin, Klaus Schruefer
2006	C	`conf`	Dielectric absorption of low-k materials: extraction, modelling and influence on SAR ADCs. ISCAS Michael Kropfitsch, Philipp Riess, Gerhard Knoblinger, Dieter Draxelmayr
2002	—	`conf`	Modeling the gate-related high-frequency and noise characteristics of deep-submicron MOSFETs. CICC Rainer Kraus, Gerhard Knoblinger
2001	J	`jnl`	A new model for thermal channel noise of deep-submicron MOSFETs and its application in RF-CMOS design. IEEE J. Solid State Circuits Gerhard Knoblinger, Peter Klein, Marc Tiebout
2001	—	`conf`	When do we need non-quasistatic CMOS RF-models? CICC Elmar Gondro, Oskar Kowarik, Gerhard Knoblinger, Peter Klein