Gerhard K. M. Wachutka

14 papers Journal 12Unranked 2
YearRankTypeTitle / Venue / Authors
2023 J jnl
High-Throughput Apparatus for Semiconductor Device Characterization in a Magnetic Field at Extreme High Temperatures.
IEEE Trans. Instrum. Meas.
Hesham Okeil, Gabriele Schrag, Gerhard K. M. Wachutka
2017 J jnl
Transient analysis of latent damage formation in SMD capacitors by Transmission Line Pulsing (TLP).
Microelectron. Reliab.
Dennis Helmut, Gerhard K. M. Wachutka, Gerhard Groos
2013 J jnl
Evaluation of thermal transient characterization methodologies for high-power LED applications.
Microelectron. J.
Stefan Müller, Thomas Zahner, Frank Singer, Gabriele Schrag, Gerhard K. M. Wachutka
2013 — conf
The art of modeling and predictive simulation in power electronics and microsystems.
MIXDES
Gerhard K. M. Wachutka
2009 J jnl
Combination of thermal subsystems by use of rapid circuit transformation and extended two-port theory.
Microelectron. J.
Y. C. Gerstenmaier, W. Kiffe, Gerhard K. M. Wachutka
2008 J jnl
Testing semiconductor devices at extremely high operating temperatures.
Microelectron. Reliab.
Peter Borthen, Gerhard K. M. Wachutka
2008 — conf
Virtual Prototyping of Microdevices and Microsystems.
DistIntellSys
Gerhard K. M. Wachutka
2006 J jnl
Thermal characterisation of power devices during transient operation.
Microelectron. J.
Alberto Castellazzi, Martin Honsberg-Riedl, Gerhard K. M. Wachutka
2004 J jnl
Corrections to "Physically Rigorous Modeling of Internal Laser-Probing Techniques for Microstructured Semiconductor Devices".
IEEE Trans. Comput. Aided Des. Integr. Circuits Syst.
Robert K. Thalhammer, Gerhard K. M. Wachutka
2004 J jnl
Physically rigorous modeling of internal laser-probing techniques for microstructured semiconductor devices.
IEEE Trans. Comput. Aided Des. Integr. Circuits Syst.
Robert K. Thalhammer, Gerhard K. M. Wachutka
2004 J jnl
Reliability of power electronic devices against cosmic radiation-induced failure.
Microelectron. Reliab.
Gerald Sölkner, Winfried Kaindl, Hans-Joachim Schulze, Gerhard K. M. Wachutka
2003 J jnl
Avalanche breakdown capability of Power DMOS Transistors and the Wunsch-Bell relation.
Microelectron. Reliab.
A. Icaza Deckelmann, Gerhard K. M. Wachutka, Franz Hirler, J. Krumrey, R. Henninger
1994 J jnl
Nonisothermal device simulation using the 2D numerical process/device simulator TRENDY and application to SOI-devices.
IEEE Trans. Comput. Aided Des. Integr. Circuits Syst.
Philip B. M. Wolbert, Gerhard K. M. Wachutka, Benno H. Krabbenborg, Ton J. Mouthaan
1990 J jnl
Rigorous thermodynamic treatment of heat generation and conduction in semiconductor device modeling.
IEEE Trans. Comput. Aided Des. Integr. Circuits Syst.
Gerhard K. M. Wachutka