Gennadi Bersuker

23 papers Journal 10Unranked 13
YearRankTypeTitle / Venue / Authors
2023 — conf
Signal duration sensitive degradation in scaled devices.
IRPS
Gennadi Bersuker, E. Tang, Dmitry Veksler
2022 — conf
Combining measurements and modeling/simulations analysis to assess carbon nanotube memory cell characteristics.
IRPS
James Farmer, Dmitry Veksler, E. Tang, Gennadi Bersuker, David Z. Gao, Al-Moatasem El-Sayed, Thomas Durrant, Alexander L. Shluger, Thomas Rueckes, Lee Cleveland, Harry Luan, Rahul Sen
2022 — conf
Experimental demonstration of sub-nanosecond switching in 2D hexagonal Boron Nitride resistive memory devices.
DRC
S. S. Teja Nibhanupudi, Dmitry Veksler, Anupam Roy, Matthew Coupin, Kevin C. Matthews, Jamie Warner, Gennadi Bersuker, Jaydeep P. Kulkarni, Sanjay Kumar Banerjee
2021 — conf
Mitigating switching variability in carbon nanotube memristors.
IRPS
James Farmer, William Whitehead, Andrew Hall, Dmitry Veksler, Gennadi Bersuker, David Z. Gao, Al-Moatasem El-Sayed, Thomas Durrant, Alexander L. Shluger, Thomas Rueckes, Lee Cleveland, Harry Luan, Rahul Sen
2020 — conf
Memory update characteristics of carbon nanotube memristors (NRAM
IRPS
Dmitry Veksler, Gennadi Bersuker, Adam W. Bushmaker, Maribeth Mason, P. R. Shrestha, Kin P. Cheung, Jason P. Campbell, Thomas Rueckes, Lee Cleveland, Harry Luan, David C. Gilmer
2019 — conf
Switching Variability Factors in Compliance-Free Metal Oxide RRAM.
IRPS
Dmitry Veksler, Gennadi Bersuker, Adam W. Bushmaker, P. R. Shrestha, Kin P. Cheung, Jason P. Campbell
2015 J jnl
Electrical Analysis of High Dielectric Constant Insulator and Metal Gate Metal Oxide Semiconductor Capacitors on Flexible Bulk Mono-Crystalline Silicon.
IEEE Trans. Reliab.
Mohamed T. Ghoneim, Jhonathan P. Rojas, Chadwin D. Young, Gennadi Bersuker, Muhammad Mustafa Hussain
2015 — conf
Substrate and temperature influence on the trap density distribution in high-k III-V MOSFETs.
IRPS
G. Sereni, Luca Vandelli, Roberto Cavicchioli, Luca Larcher, Dmitry Veksler, Gennadi Bersuker
2015 — conf
Threading dislocations in III-V semiconductors: Analysis of electrical conduction.
IRPS
Violaine Iglesias, Marc Porti, Carlos Couso, Q. Wu, S. Claramunt, Montserrat Nafría, Enrique Miranda, Neus Domingo, Gennadi Bersuker, Aaron Cordes
2014 — conf
Assessing device reliability through atomic-level modeling of material characteristics.
ICICDT
Gennadi Bersuker
2013 — conf
Connecting RRAM performance to the properties of the hafnia-based dielectrics.
ESSDERC
Gennadi Bersuker, Brian Butcher, David Gilmer, Paul Kirsch, Luca Larcher, Andrea Padovani
2013 — conf
Microscopic degradation models for advanced technology.
VLSI-DAT
Gennadi Bersuker
2012 — conf
Emerging CMOS and beyond CMOS technologies for an ultra-low power 3D world.
ICICDT
Chang Yong Kang, K. W. Ang, R. Hill, W. Y. Loh, Jungwoo Oh, Rinus Lee, David Gilmer, Gennadi Bersuker, C. Hobbs, Paul Kirsch, Klaus Hummler, S. Arkalgud, Raj Jammy
2012 J jnl
Nanoscale observations of resistive switching high and low conductivity states on TiN/HfO
Microelectron. Reliab.
Violaine Iglesias, Mario Lanza, Albin Bayerl, Marc Porti, Montserrat Nafría, Xavier Aymerich, Lifeng Liu, Jinfeng Kang, Gennadi Bersuker, Kai Zhang, Ziyong Shen
2012 — conf
Random Telegraph Signal noise properties of HfOx RRAM in high resistive state.
ESSDERC
Francesco Maria Puglisi, Paolo Pavan, Andrea Padovani, Luca Larcher, Gennadi Bersuker
2009 J jnl
Temperature dependent time-to-breakdown (T
Microelectron. Reliab.
N. A. Chowdhury, X. Wang, Gennadi Bersuker, Chadwin D. Young, N. Rahim, Durga Misra
2008 J jnl
A novel approach to characterization of progressive breakdown in high-k/metal gate stacks.
Microelectron. Reliab.
R. Pagano, Salvatore Lombardo, Felix Palumbo, Paul Kirsch, S. A. Krishnan, Chadwin D. Young, Rino Choi, Gennadi Bersuker, James H. Stathis
2007 J jnl
Applications of DCIV method to NBTI characterization.
Microelectron. Reliab.
Arnost Neugroschel, Gennadi Bersuker, Rino Choi
2007 J jnl
Electrical characterization and analysis techniques for the high-kappa era.
Microelectron. Reliab.
Chadwin D. Young, Dawei Heh, Arnost Neugroschel, Rino Choi, Byoung Hun Lee, Gennadi Bersuker
2006 J jnl
Intrinsic bonding defects in transition metal elemental oxides.
Microelectron. Reliab.
Gerald Lucovsky, H. Seo, L. B. Fleming, M. D. Ulrich, J. Lüning, Patrick Lysaght, Gennadi Bersuker
2005 J jnl
Probing stress effects in HfO
Microelectron. Reliab.
Chadwin D. Young, Gennadi Bersuker, Yuegang Zhao, Jeff J. Peterson, Joel Barnett, George A. Brown, Jang H. Sim, Rino Choi, Byoung Hun Lee, Peter Zeitzoff
2004 J jnl
Effect of Pre-Existing Defects on Reliability Assessment of High-K Gate Dielectrics.
Microelectron. Reliab.
Gennadi Bersuker, Jang H. Sim, Chadwin D. Young, Rino Choi, Peter Zeitzoff, George A. Brown, Byoung Hun Lee, Robert W. Murto
2001 J jnl
Degradation of thin oxides during electrical stress.
Microelectron. Reliab.
Gennadi Bersuker, Yongjoo Jeon, Howard R. Huff