Gang-Jun Kim - RankMe

13 papers Journal 8Unranked 5

Year	Rank	Type	Title / Venue / Authors
2025	—	`conf`	Novel Linear Model for OFF-State Stress Causing Stand-By Current of Advanced VNAND Chip. IRPS Hyuk Park, Gang-Jun Kim, Nam-Jae Kim, Jaeyeop Ahn, Taehun You, Y. Kang, M. Yoon, Seonhaeng Lee, Nam-Hyun Lee, Sang Won Hwang, Yuchul Hwang, Seungbum Ko, Sangwoo Pae
2025	—	`conf`	Reliability Characterization Using Accelerated Methods of 1Tb 9th-Gen VNAND for TLC/QLC applications. IRPS Gang-Jun Kim, Taehun You, Sewon Jeon, Seung Hwan Kwak, Hwangju Song, Shinhyung Kim, Nam-Jae Kim, Jaeyeop Ahn, Hyuk Park, Seonhaeng Lee, Nam-Hyun Lee, Young Hoon Cho, Sang Won Hwang, Yuchul Hwang, Seungbum Ko, Sangwoo Pae
2024	J	`jnl`	Current-Voltage Modeling of DRAM Cell Transistor Using Genetic Algorithm and Deep Learning. IEEE Access Jun Hui Park, Jung Nam Kim, Seonhaeng Lee, Gang-Jun Kim, Namhyun Lee, Rock-Hyun Baek, Dae Hwan Kim, Changhyun Kim, Myounggon Kang, Yoon Kim
2024	—	`conf`	Effect of Off-State Stress on Data-Valid Window Margin for Advanced DRAM Using HK/MG Process Technology. IRPS Sunhang Lee, Nam-Hyun Lee, Gang-Jun Kim, Jaeyeop Ahn, Ik-hwan Kim, S. Ha, S. Rhee, GH Bae, KW Lee, YS Lee, Seungbum Ko, Sangwoo Pae
2021	—	`conf`	Effect of High Temperature on Recovery of Hot Carrier Degradation of scaled nMOSFETs in DRAM. IRPS Donghee Son, Gang-Jun Kim, Jongkyun Kim, Nam-Hyun Lee, Kijin Kim, Sangwoo Pae
2021	—	`conf`	The Characterization of Degradation on various SiON pMOSFET transistors under AC/DC NBTI stress. IRPS Gang-Jun Kim, Moonjee Yoon, Sunghwan Kim, Myeongkyu Eo, Shinhyung Kim, Taehun You, Namhyun Lee, Kijin Kim, Sangwoo Pae
2018	J	`jnl`	Effect of DC/AC stress on the reliability of cell capacitor in DRAM. Microelectron. Reliab. Gang-Jun Kim, Nam-Hyun Lee, Jongkyun Kim, Jung Eun Seok, Yunsung Lee
2018	J	`jnl`	Effect of OFF-state stress on reliability of nMOSFET in SWD circuits of DRAM. Microelectron. Reliab. Jongkyun Kim, Namhyun Lee, Gang-Jun Kim, Young-Yun Lee, Jung-Eun Seok, Yunsung Lee
2018	J	`jnl`	Method to extract parameters of power law for nano-scale SiON pMOSFETs under negative bias temperature instability. Microelectron. Reliab. Yeohyeok Yun, Gang-Jun Kim, Ji-Hoon Seo, Donghee Son, Bongkoo Kang
2016	J	`jnl`	Channel width dependence of AC stress on bulk nMOSFETs. Microelectron. Reliab. Donghee Son, Gang-Jun Kim, Ji-Hoon Seo, Nam-Hyun Lee, YongHa Kang, Bongkoo Kang
2016	J	`jnl`	Degradation of pMOSFETs due to hot electron induced punchthrough. Microelectron. Reliab. Donghee Son, Gang-Jun Kim, Ji-Hoon Seo, Nam-Hyun Lee, YongHa Kang, Bongkoo Kang
2013	J	`jnl`	Effect of negative bias temperature instability induced by a low stress voltage on nanoscale high-k/metal gate pMOSFETs. Microelectron. Reliab. Seonhaeng Lee, Cheolgyu Kim, Hyeokjin Kim, Gang-Jun Kim, Ji-Hoon Seo, Donghee Son, Bongkoo Kang
2012	J	`jnl`	Effect of electron-electron scattering at an elevated temperature on device lifetime of nanoscale nMOSFETs. Microelectron. Reliab. Seonhaeng Lee, Dongwoo Kim, Cheolgyu Kim, N.-H. Lee, Gang-Jun Kim, Chiho Lee, Jeongsoo Park, Bongkoo Kang