G. Ghidini

13 papers Journal 13
YearRankTypeTitle / Venue / Authors
2012 J jnl
Charge-related phenomena and reliability of non-volatile memories.
Microelectron. Reliab.
G. Ghidini
2009 J jnl
Trapped charge and stress induced leakage current (SILC) in tunnel SiO
Microelectron. Reliab.
Mario Lanza, Marc Porti, Montserrat Nafría, Xavier Aymerich, G. Ghidini, A. Sebastiani
2007 J jnl
High-K dielectrics for inter-poly application in non volatile memories.
Microelectron. Reliab.
A. Sebastiani, R. Piagge, Alberto Modelli, G. Ghidini
2007 J jnl
Lifetime estimation of analog circuits from the electrical characteristics of stressed MOSFETs.
Microelectron. Reliab.
Javier Martín-Martínez, Simone Gerardin, Rosana Rodríguez, Montserrat Nafría, Xavier Aymerich, Andrea Cester, Alessandro Paccagnella, G. Ghidini
2006 J jnl
Degradation of static and dynamic behavior of CMOS inverters during constant and pulsed voltage stress.
Microelectron. Reliab.
Simone Gerardin, Alessio Griffoni, Andrea Cester, Alessandro Paccagnella, G. Ghidini
2005 J jnl
Impact of interface and bulk trapped charges on transistor reliability.
Microelectron. Reliab.
G. Ghidini, M. Langenbuch, R. Bottini, D. Brazzelli, Andrea Ghetti, N. Galbiati, G. Giusto, A. Garavaglia
2005 J jnl
In situ steam generation (ISSG) versus standard steam technology: impact on oxide reliability.
Microelectron. Reliab.
M. Langenbuch, R. Bottini, Maria Elena Vitali, G. Ghidini
2005 J jnl
Tunnel oxide degradation under pulsed stress.
Microelectron. Reliab.
G. Ghidini, C. Capolupo, G. Giusto, A. Sebastiani, B. Stragliati, Maria Elena Vitali
2003 J jnl
Anomalous gate oxide conduction on isolation edges: analysis and process optimization.
Microelectron. Reliab.
Andrea Ghetti, D. Brazzelli, A. Benvenuti, G. Ghidini, Alessia Pavan
2003 J jnl
Impact of gate stack process on conduction and reliability of 0.18 mum PMOSFET.
Microelectron. Reliab.
G. Ghidini, A. Garavaglia, G. Giusto, Andrea Ghetti, R. Bottini, D. Peschiaroli, M. Scaravaggi, F. Cazzaniga, Daniele Ielmini
2003 J jnl
Ionising radiation effects on MOSFET drain current.
Microelectron. Reliab.
S. Cimino, Andrea Cester, Alessandro Paccagnella, G. Ghidini
2002 J jnl
Evaluation methodology of thin dielectrics for non-volatile memory application.
Microelectron. Reliab.
G. Ghidini, D. Brazzelli
2001 J jnl
Impact of the As dose in 0.35 mum EEPROM technology: characterization and modeling.
Microelectron. Reliab.
N. Galbiati, G. Ghidini, C. Cremonesi, Luca Larcher