Fred G. Kuper

14 papers Journal 14
YearRankTypeTitle / Venue / Authors
2008 J jnl
Automotive IC reliability: Elements of the battle towards zero defects.
Microelectron. Reliab.
Fred G. Kuper
2008 J jnl
RF CMOS reliability simulations.
Microelectron. Reliab.
Guido T. Sasse, Mustafa Acar, Fred G. Kuper, Jurriaan Schmitz
2006 J jnl
Reduced temperature dependence of hot carrier degradation in deuterated nMOSFETs.
Microelectron. Reliab.
Cora Salm, André J. Hof, Fred G. Kuper, Jurriaan Schmitz
2005 J jnl
A 3-D Circuit Model to evaluate CDM performance of ICs.
Microelectron. Reliab.
M. S. B. Sowariraj, Theo Smedes, Peter C. de Jong, Cora Salm, Ton J. Mouthaan, Fred G. Kuper
2004 J jnl
Applying the fWLR concept to Stress induced leakage current in non-volatile memory processes.
Microelectron. Reliab.
Guoqiao Tao, Andrea Scarpa, Leo van Marwijk, Kitty van Dijk, Fred G. Kuper
2004 J jnl
Plasma Charging Damage Reduction in IC Processing by A Self-balancing Interconnect.
Microelectron. Reliab.
Zhichun Wang, Jan Ackaert, Cora Salm, Fred G. Kuper, Eddy De Backer
2003 J jnl
Reservoir effect and maximum allowed VIA misalignment for AlCu interconnect with tungsten VIA plug.
Microelectron. Reliab.
Yuan Li, Klaas Jelle Veenstra, Jérôme Dubois, Lei Peters-Wu, Agnes van Zomeren, Fred G. Kuper
2003 J jnl
Role of package parasitics and substrate resistance on the Charged Device Model (CDM) failure levels -An explanation and die protection strategy.
Microelectron. Reliab.
M. S. B. Sowariraj, Theo Smedes, Cora Salm, Ton J. Mouthaan, Fred G. Kuper
2002 J jnl
Fast temperature cycling and electromigration induced thin film cracking in multilevel interconnection: experiments and modeling.
Microelectron. Reliab.
H. V. Nguyen, Cora Salm, J. Vroemen, J. Voets, Benno Krabbenborg, Jaap Bisschop, A. J. Mouthaan, Fred G. Kuper
2002 J jnl
Simulation and experimental characterization of reservoir and via layout effects on electromigration lifetime.
Microelectron. Reliab.
H. V. Nguyen, Cora Salm, R. Wenzel, A. J. Mouthaan, Fred G. Kuper
2002 J jnl
The influence of technology variation on ggNMOSTs and SCRs against CDM BSD stress.
Microelectron. Reliab.
M. S. B. Sowariraj, Theo Smedes, Cora Salm, Ton J. Mouthaan, Fred G. Kuper
2002 J jnl
Zapping thin film transistors.
Microelectron. Reliab.
N. Tosic Golo, Fred G. Kuper, Ton J. Mouthaan
2001 J jnl
Investigations on double-diffused MOS transistors under ESD zap conditions.
Microelectron. Reliab.
Gianluca Boselli, Stan Meeuwsen, Ton J. Mouthaan, Fred G. Kuper
2001 J jnl
The time-voltage trade-off for ESD damage threshold in amorphous silicon hydrogenated thin-film transistors.
Microelectron. Reliab.
N. Tosic Golo, S. van der Wal, Fred G. Kuper, Ton J. Mouthaan