Francis Balestra

16 papers Journal 9Unranked 7
YearRankTypeTitle / Venue / Authors
2023 — conf
Experimental Study of Self-Heating Effect in InGaAs HEMTs for Quantum Technologies Down to 10K.
IRPS
F. Serra Di Santa Maria, Francis Balestra, Christoforos G. Theodorou, Gérard Ghibaudo, Cezar B. Zota, Eunjung Cha
2022 — conf
In-depth electrical characterization of deca-nanometer InGaAs MOSFET down to cryogenic temperatures for low-power quantum applications.
ESSDERC
F. Serra Di Santa Maria, Christoforos G. Theodorou, Francis Balestra, Gérard Ghibaudo, Eunjung Cha, Cezar B. Zota
2021 — conf
Status and trends in Nanoelectronic devices for the ultimate integration of ICs.
ASICON
Francis Balestra
2019 — conf
Nanoscale Devices for the end of the Roadmap.
ASICON
Francis Balestra
2017 J jnl
Development and application of the Oxide Stress Separation technique for the measurement of ONO leakage currents at low electric fields in 40 nm floating gate embedded-flash memory.
Microelectron. Reliab.
Adam Dobri, Simon Jeannot, Fausto Piazza, Carine Jahan, Jean Coignus, Luca Perniola, Francis Balestra
2017 — conf
Ultra low power and high performance nanoelectronic devices.
ASICON
Francis Balestra
2012 — conf
New parameter extraction method based on split C-V for FDSOI MOSFETs.
ESSDERC
Imed Ben Akkez, Antoine Cros, Claire Fenouillet-Béranger, Frédéric Boeuf, Quentin Rafhay, Francis Balestra, Gérard Ghibaudo
2009 J jnl
Investigation of defects introduced by static and dynamic hot carrier stress on SOI partially depleted body-contact MOSFETs.
Microelectron. Reliab.
M. A. Exarchos, George J. Papaioannou, Jalal Jomaah, Francis Balestra
2006 J jnl
On the drain current saturation in short channel MOSFETs.
Microelectron. J.
A. Benfdila, Francis Balestra
2005 J jnl
The impact of static and dynamic degradation on SOI "smart-cut" floating body MOSFETs.
Microelectron. Reliab.
M. A. Exarchos, George J. Papaioannou, Jalal Jomaah, Francis Balestra
2004 J jnl
On the defects introduced by AC and DC hot carrier stress in SOI PD MOSFETs.
Microelectron. Reliab.
M. A. Exarchos, François Dieudonné, Jalal Jomaah, George J. Papaioannou, Francis Balestra
2003 J jnl
Low frequency noise in 0.12 mum partially and fully depleted SOI technology.
Microelectron. Reliab.
François Dieudonné, Sébastien Haendler, Jalal Jomaah, Francis Balestra
2002 J jnl
Origin of hot carrier degradation in advanced nMOSFET devices.
Microelectron. Reliab.
Bogdan Cretu, Francis Balestra, Gérard Ghibaudo, Georges Guégan
2001 J jnl
An overview of hot-carrier induced degradation in 0.25 mum Partially and Fully Depleted SOI N-MOSFET's.
Microelectron. Reliab.
François Dieudonné, F. Daugé, Jalal Jomaah, C. Raynaud, Francis Balestra
2001 J jnl
Improved analysis of low frequency noise in dynamic threshold MOS/SOI transistors.
Microelectron. Reliab.
Sébastien Haendler, Jalal Jomaah, Gérard Ghibaudo, Francis Balestra
2000 — conf
0.25 μm SOI technologies performance for low-power radio-frequency applications.
ICECS
O. Rozeau, Sébastien Haendler, Jalal Jomaah, J. Boussey, Francis Balestra, C. Raynaud, J. L. Pelloie