Francesco Maria Puglisi

34 papers Journal 8Unranked 26
YearRankTypeTitle / Venue / Authors
2025 — conf
Design for Reliability of Multi-Bit Operations in RRAM-Based SIMPLY Logic-in-Memory Circuits.
ICICDT
Tommaso Zanotti, Erika Borellini, Massimo Vatalaro, Vincenzo Maccaronio, Paolo Pavan, Raffaele De Rose, Francesco Maria Puglisi
2025 — conf
Design of a Temperature-Aware Voltage Generator for 2-Bit Read Operation in STT-MRAM Based SIMPLY Architecture.
ICICDT
Massimo Vatalaro, Vincenzo Maccaronio, Tommaso Zanotti, Erika Borellini, Felice Crupi, Francesco Maria Puglisi, Raffaele De Rose
2024 J jnl
A Hybrid CMOS-Memristor Spiking Neural Network Supporting Multiple Learning Rules.
IEEE Trans. Neural Networks Learn. Syst.
Davide Florini, Daniela Gandolfi, Jonathan Mapelli, Lorenzo Benatti, Paolo Pavan, Francesco Maria Puglisi
2023 — conf
A Unified Framework to Explain Random Telegraph Noise Complexity in MOSFETs and RRAMs.
IRPS
Sara Vecchi, Paolo Pavan, Francesco Maria Puglisi
2023 J jnl
Reliability of HfO
Proc. IEEE
Nicolò Zagni, Francesco Maria Puglisi, Paolo Pavan, Muhammad Ashraful Alam
2023 — conf
The Role of Defects and Interface Degradation on Ferroelectric HZO Capacitors Aging.
IRPS
Lorenzo Benatti, Sara Vecchi, Milan Pesic, Francesco Maria Puglisi
2022 — conf
Combining Experiments and a Novel Small Signal Model to Investigate the Degradation Mechanisms in Ferroelectric Tunnel Junctions.
IRPS
Lorenzo Benatti, Paolo Pavan, Francesco Maria Puglisi
2022 — conf
Defects Motion as the Key Source of Random Telegraph Noise Instability in Hafnium Oxide.
ESSDERC
Sara Vecchi, Paolo Pavan, Francesco Maria Puglisi
2022 J jnl
Effect of cycling on ultra-thin HfZrO
Neuromorph. Comput. Eng.
Laura Bégon-Lours, Mattia Halter, Marilyne Sousa, Youri Popoff, Diana Dávila Pineda, Donato Francesco Falcone, Zhenming Yu, Steffen Reidt, Lorenzo Benatti, Francesco Maria Puglisi, Bert Jan Offrein
2022 — conf
Self-consistent Automated Parameter Extraction of RRAM Physics-Based Compact Model.
ESSDERC
Tommaso Zanotti, Paolo Pavan, Francesco Maria Puglisi
2022 J jnl
Smart Material Implication Using Spin-Transfer Torque Magnetic Tunnel Junctions for Logic-in-Memory Computing.
CoRR
Raffaele De Rose, Tommaso Zanotti, Francesco Maria Puglisi, Felice Crupi, Paolo Pavan, Marco Lanuzza
2022 — conf
The Relevance of Trapped Charge for Leakage and Random Telegraph Noise Phenomena.
IRPS
Sara Vecchi, Paolo Pavan, Francesco Maria Puglisi
2021 — conf
Low-Bit Precision Neural Network Architecture with High Immunity to Variability and Random Telegraph Noise based on Resistive Memories.
IRPS
Tommaso Zanotti, Francesco Maria Puglisi, Paolo Pavan
2021 J jnl
Optimized Synthesis Method for Ultra-Low Power Multi-Input Material Implication Logic With Emerging Non-Volatile Memories.
IEEE Trans. Circuits Syst. I Regul. Pap.
Francesco Maria Puglisi, Tommaso Zanotti, Paolo Pavan
2020 — conf
Circuit Reliability Analysis of RRAM-based Logic-in-Memory Crossbar Architectures Including Line Parasitic Effects, Variability, and Random Telegraph Noise.
IRPS
Tommaso Zanotti, Francesco Maria Puglisi, Paolo Pavan
2020 J jnl
Reconfigurable Smart In-Memory Computing Platform Supporting Logic and Binarized Neural Networks for Low-Power Edge Devices.
IEEE J. Emerg. Sel. Topics Circuits Syst.
Tommaso Zanotti, Francesco Maria Puglisi, Paolo Pavan
2020 — conf
Smart Logic-in-Memory Architecture For Ultra-Low Power Large Fan-In Operations.
AICAS
Tommaso Zanotti, Francesco Maria Puglisi, Paolo Pavan
2020 — conf
Trap Dynamics Model Explaining the RON Stress/Recovery Behavior in Carbon-Doped Power AlGaN/GaN MOS-HEMTs.
IRPS
Nicolò Zagni, Alessandro Chini, Francesco Maria Puglisi, Paolo Pavan, Matteo Meneghini, Gaudenzio Meneghesso, Enrico Zanoni, Giovanni Verzellesi
2019 — conf
SIMPLY: Design of a RRAM-Based Smart Logic-in-Memory Architecture using RRAM Compact Model.
ESSDERC
Francesco Maria Puglisi, Tommaso Zanotti, Paolo Pavan
2018 — conf
Energy-Efficient Logic-in-Memory I-bit Full Adder Enabled by a Physics-Based RRAM Compact Model.
ESSDERC
Francesco Maria Puglisi, Lorenzo Pacchioni, Nicolo Zagni, Paolo Pavan
2017 — conf
A new verilog-A compact model of random telegraph noise in oxide-based RRAM for advanced circuit design.
ESSDERC
Francesco Maria Puglisi, Nicolo Zagni, Luca Larcher, Paolo Pavan
2017 — conf
Measuring and analyzing Random Telegraph Noise in Nanoscale Devices: The case of resistive random access memories.
NVMTS
Francesco Maria Puglisi
2017 — conf
Variability and sensitivity to process parameters variations in InGaAs dual-gate ultra-thin body MOSFETs: A scaling perspective.
PATMOS
Nicolo Zagni, Francesco Maria Puglisi, Giovanni Verzellesi, Paolo Pavan
2016 J jnl
Bipolar Resistive RAM Based on HfO
IEEE J. Emerg. Sel. Topics Circuits Syst.
Francesco Maria Puglisi, Luca Larcher, Andrea Padovani, Paolo Pavan
2016 J jnl
Guidelines for a Reliable Analysis of Random Telegraph Noise in Electronic Devices.
IEEE Trans. Instrum. Meas.
Francesco Maria Puglisi, Paolo Pavan
2016 — conf
Multiscale modeling of electron-ion interactions for engineering novel electronic devices and materials.
PATMOS
Luca Larcher, Francesco Maria Puglisi, Andrea Padovani, Luca Vandelli, Paolo Pavan
2016 — conf
Multiscale modeling of electron-ion interactions for engineering novel electronic devices and materials.
PATMOS
Luca Larcher, Francesco Maria Puglisi, Andrea Padovani, Luca Vandelli, Paolo Pavan
2016 — conf
Probing defects generation during stress in high-κ/metal gate FinFETs by random telegraph noise characterization.
ESSDERC
Francesco Maria Puglisi, Felipe Costantini, Ben Kaczer, Luca Larcher, Paolo Pavan
2015 — conf
A microscopic physical description of RTN current fluctuations in HfOx RRAM.
IRPS
Francesco Maria Puglisi, Paolo Pavan, Luca Vandelli, Andrea Padovani, Matteo Bertocchi, Luca Larcher
2015 — conf
Characterization of anomalous Random Telegraph Noise in Resistive Random Access Memory.
ESSDERC
Francesco Maria Puglisi, Luca Larcher, Andrea Padovani, Paolo Pavan
2014 — conf
Analysis of RTN and cycling variability in HfO2 RRAM devices in LRS.
ESSDERC
Francesco Maria Puglisi, Paolo Pavan, Luca Larcher, Andrea Padovani
2013 — conf
A compact model of hafnium-oxide-based resistive random access memory.
ICICDT
Francesco Maria Puglisi, Paolo Pavan, Andrea Padovani, Luca Larcher
2013 — conf
Random telegraph noise analysis to investigate the properties of active traps of HfO2-based RRAM in HRS.
ESSDERC
Francesco Maria Puglisi, Paolo Pavan, Andrea Padovani, Luca Larcher
2012 — conf
Random Telegraph Signal noise properties of HfOx RRAM in high resistive state.
ESSDERC
Francesco Maria Puglisi, Paolo Pavan, Andrea Padovani, Luca Larcher, Gennadi Bersuker