Francesco Iannuzzo

74 papers C 7Journal 67
YearRankTypeTitle / Venue / Authors
2024 J jnl
Investigation on Saturation Voltage Increment of Multichip Press-Pack IGBTs Under Power Cycling Tests.
IEEE Trans. Ind. Electron.
Cao Zhan, Lingyu Zhu, Yaxin Zhang, Shengchang Ji, Francesco Iannuzzo, Frede Blaabjerg
2023 J jnl
Multidimensional Mission-Profile-Based Lifetime Estimation Approach for IGBT Modules in MMC-HVdc Application Considering Bidirectional Power Transfer.
IEEE Trans. Ind. Electron.
Cao Zhan, Lingyu Zhu, Weicheng Wang, Yaxin Zhang, Shengchang Ji, Francesco Iannuzzo
2023 C conf
Optimization of a Bidirectional Boost Converter for Nanogrid Applications.
IAS
Rand AL Mdanat, Sarah Saeed, Ramy Georgious, Jorge García, Francesco Iannuzzo
2022 J jnl
Improved Temperature Monitoring and Protection Method of Three-Level NPC Application Based on Half-Bridge IGBT Modules.
IEEE Access
Qiang Wang, Jingwei Zhang, Francesco Iannuzzo, Amir Sajjad Bahman, Weifeng Zhang, Fengyou He
2021 J jnl
Effect of Current Distortion and Unbalanced Loads on Semiconductors Reliability.
IEEE Access
Tomàs Lledó-Ponsati, Amir Sajjad Bahman, Francesco Iannuzzo, Daniel Montesinos-Miracle, Samuel Galceran-Arellano
2020 J jnl
Ensuring a Reliable Operation of Two-Level IGBT-Based Power Converters: A Review of Monitoring and Fault-Tolerant Approaches.
IEEE Access
Keting Hu, Zhigang Liu, Yongheng Yang, Francesco Iannuzzo, Frede Blaabjerg
2019 J jnl
The Temperature Dependence of the Flatband Voltage in High-Power IGBTs.
IEEE Trans. Ind. Electron.
Nick Baker, Francesco Iannuzzo
2018 J jnl
Editorial.
Microelectron. Reliab.
Mauro Ciappa, Paolo Cova, Gaudenzio Meneghesso, Francesco Iannuzzo
2018 J jnl
Effect of short-circuit stress on the degradation of the SiO
Microelectron. Reliab.
Paula Diaz Reigosa, Francesco Iannuzzo, Lorenzo Ceccarelli
2018 J jnl
Enabling Junction Temperature Estimation via Collector-Side Thermo-Sensitive Electrical Parameters Through Emitter Stray Inductance in High-Power IGBT Modules.
IEEE Trans. Ind. Electron.
Haoze Luo, Wuhua Li, Francesco Iannuzzo, Xiangning He, Frede Blaabjerg
2018 J jnl
Failure mechanism analysis of fuses subjected to manufacturing and operational thermal stresses.
Microelectron. Reliab.
Amir Sajjad Bahman, Simon M. Jensen, Francesco Iannuzzo
2018 J jnl
Investigating SiC MOSFET body diode's light emission as temperature-sensitive electrical parameter.
Microelectron. Reliab.
Lorenzo Ceccarelli, Haoze Luo, Francesco Iannuzzo
2018 J jnl
Investigation of acoustic emission as a non-invasive method for detection of power semiconductor aging.
Microelectron. Reliab.
Pooya Davari, O. Kristensen, Francesco Iannuzzo
2018 J jnl
Investigation on the degradation indicators of short-circuit tests in 1.2 kV SiC MOSFET power modules.
Microelectron. Reliab.
H. Du, Paula Diaz Reigosa, Francesco Iannuzzo, Lorenzo Ceccarelli
2018 J jnl
On-line solder layer degradation measurement for SiC-MOSFET modules under accelerated power cycling condition.
Microelectron. Reliab.
Haoze Luo, Paula Diaz Reigosa, Francesco Iannuzzo, Frede Blaabjerg
2018 J jnl
Power cycling test of transfer molded IGBT modules by advanced power cycler under different junction temperature swings.
Microelectron. Reliab.
Ui-Min Choi, Søren Jørgensen, Francesco Iannuzzo, Frede Blaabjerg
2018 J jnl
Simple and effective open switch fault diagnosis of single-phase PWM rectifier.
Microelectron. Reliab.
Keting Hu, Zhigang Liu, Francesco Iannuzzo, Frede Blaabjerg
2018 J jnl
Smart SiC MOSFET accelerated lifetime testing.
Microelectron. Reliab.
Nick Baker, Francesco Iannuzzo
2018 J jnl
Thermal modeling of wire-bonded power modules considering non-uniform temperature and electric current interactions.
Microelectron. Reliab.
Mohsen Akbari, Amir Sajjad Bahman, Paula Diaz Reigosa, Francesco Iannuzzo, Mohammad Tavakoli Bina
2017 J jnl
A survey of SiC power MOSFETs short-circuit robustness and failure mode analysis.
Microelectron. Reliab.
Lorenzo Ceccarelli, Paula Diaz Reigosa, Francesco Iannuzzo, Frede Blaabjerg
2017 C conf
Active thermal control by controlled shoot-through of power devices.
IECON
Alessandro Soldati, Francesco Iannuzzo, Frede Blaabjerg
2017 C conf
Active thermal control for reliability improvement of MOS-gated power devices.
IECON
Alessandro Soldati, Carlo Concari, Fabrizio Dossena, Davide Barater, Francesco Iannuzzo, Frede Blaabjerg
2017 J jnl
Advanced power cycler with intelligent monitoring strategy of IGBT module under test.
Microelectron. Reliab.
Ui-Min Choi, Frede Blaabjerg, Francesco Iannuzzo
2017 J jnl
Capacitive effects in IGBTs limiting their reliability under short circuit.
Microelectron. Reliab.
Paula Diaz Reigosa, Francesco Iannuzzo, Munaf Rahimo, Frede Blaabjerg
2017 C conf
Compact electro-thermal modeling of a SiC MOSFET power module under short-circuit conditions.
IECON
Lorenzo Ceccarelli, Paula Diaz Reigosa, Amir Sajjad Bahman, Francesco Iannuzzo, Frede Blaabjerg
2017 J jnl
Die degradation effect on aging rate in accelerated cycling tests of SiC power MOSFET modules.
Microelectron. Reliab.
Haoze Luo, Nick Baker, Francesco Iannuzzo, Frede Blaabjerg
2017 J jnl
Reliability-oriented environmental thermal stress analysis of fuses in power electronics.
Microelectron. Reliab.
Amir Sajjad Bahman, Francesco Iannuzzo, T. Holmgaard, R. Ø. Nielsen, Frede Blaabjerg
2017 C conf
Separation test method for investigation of current density effects on bond wires of SiC power MOSFET modules.
IECON
Haoze Luo, Francesco Iannuzzo, Frede Blaabjerg, Wuhua Li, Xiangning He
2017 J jnl
Uneven temperature effect evaluation in high-power IGBT inverter legs and relative test platform design.
Microelectron. Reliab.
Haoze Luo, Wuhua Li, Xiangning He, Francesco Iannuzzo, Frede Blaabjerg
2017 J jnl
Wire bond degradation under thermo- and pure mechanical loading.
Microelectron. Reliab.
Kristian Bonderup Pedersen, Dennis A. Nielsen, Bernhard Czerny, Golta Khatibi, Francesco Iannuzzo, Vladimir N. Popok, Kjeld Pedersen
2016 J jnl
Comparison of thermal runaway limits under different test conditions based on a 4.5 kV IGBT.
Microelectron. Reliab.
Paula Diaz Reigosa, Daniel Prindle, Gontran Pâques, Silvan Geissmann, Francesco Iannuzzo, Arnost Kopta, Munaf Rahimo
2016 J jnl
Mission-profile-based stress analysis of bond-wires in SiC power modules.
Microelectron. Reliab.
Amir Sajjad Bahman, Francesco Iannuzzo, Frede Blaabjerg
2016 J jnl
Modern IGBT gate driving methods for enhancing reliability of high-power converters - An overview.
Microelectron. Reliab.
Haoze Luo, Francesco Iannuzzo, Paula Diaz Reigosa, Frede Blaabjerg, Wuhua Li, Xiangning He
2016 J jnl
Power cycling test and failure analysis of molded Intelligent Power IGBT Module under different temperature swing durations.
Microelectron. Reliab.
Ui-Min Choi, Frede Blaabjerg, Søren Jørgensen, Francesco Iannuzzo, Huai Wang, Christian Uhrenfeldt, Stig Munk-Nielsen
2016 J jnl
Reliability issues in power electronics.
Microelectron. Reliab.
Francesco Iannuzzo, Mauro Ciappa
2015 J jnl
Experimental study of Single Event Effects induced by heavy ion irradiation in enhancement mode GaN power HEMT.
Microelectron. Reliab.
Carmine Abbate, Giovanni Busatto, Francesco Iannuzzo, S. Mattiazzo, Annunziata Sanseverino, Luca Silvestrin, D. Tedesco, Francesco Velardi
2015 J jnl
Junction temperature estimation method for a 600 V, 30A IGBT module during converter operation.
Microelectron. Reliab.
Ui-Min Choi, Frede Blaabjerg, Francesco Iannuzzo, Søren Jørgensen
2015 J jnl
Robustness of MW-Level IGBT modules against gate oscillations under short circuit events.
Microelectron. Reliab.
Paula Diaz Reigosa, Rui Wu, Francesco Iannuzzo, Frede Blaabjerg
2014 C conf
Investigation on the short-circuit behavior of an aged IGBT module through a 6 kA/1.1 kV non-destructive testing equipment.
IECON
Rui Wu, Liudmila Smirnova, Francesco Iannuzzo, Huai Wang, Frede Blaabjerg
2014 J jnl
Thermal damage in SiC Schottky diodes induced by SE heavy ions.
Microelectron. Reliab.
Carmine Abbate, Giovanni Busatto, Paolo Cova, Nicola Delmonte, Francesco Giuliani, Francesco Iannuzzo, Annunziata Sanseverino, Francesco Velardi
2014 J jnl
Turn-off instabilities in large area IGBTs.
Microelectron. Reliab.
Carmine Abbate, Francesco Iannuzzo, Giovanni Busatto, Annunziata Sanseverino, Francesco Velardi, Cesare Ronsisvalle, James Victory
2013 C conf
Catastrophic failure and fault-tolerant design of IGBT power electronic converters - an overview.
IECON
Rui Wu, Frede Blaabjerg, Huai Wang, Marco Liserre, Francesco Iannuzzo
2013 J jnl
Scattering parameter approach applied to the stability analysis of power IGBTs in short circuit.
Microelectron. Reliab.
Carmine Abbate, Giovanni Busatto, Francesco Iannuzzo, Cesare Ronsisvalle, Annunziata Sanseverino, Francesco Velardi
2013 J jnl
Thermal instability during short circuit of normally-off AlGaN/GaN HFETs.
Microelectron. Reliab.
Carmine Abbate, Francesco Iannuzzo, Giovanni Busatto
2012 J jnl
Behavior of power MOSFETs during heavy ions irradiation performed after γ-rays exposure.
Microelectron. Reliab.
Giovanni Busatto, Valentina De Luca, Francesco Iannuzzo, Annunziata Sanseverino, Francesco Velardi
2012 J jnl
Editorial.
Microelectron. Reliab.
Mauro Ciappa, Paolo Cova, Francesco Iannuzzo, Gaudenzio Meneghesso
2012 J jnl
Reliability oriented design of power supplies for high energy physics applications.
Microelectron. Reliab.
Stefania Baccaro, Giovanni Busatto, Mauro Citterio, Paolo Cova, Nicola Delmonte, Francesco Iannuzzo, Agostino Lanza, Marco Riva, Annunziata Sanseverino, Giorgio Spiazzi
2012 J jnl
Unclamped repetitive stress on 1200 V normally-off SiC JFETs.
Microelectron. Reliab.
Carmine Abbate, Giovanni Busatto, Francesco Iannuzzo
2011 J jnl
A new test methodology for an exhaustive study of single-event-effects on power MOSFETs.
Microelectron. Reliab.
Giovanni Busatto, D. Bisello, Giuseppe Currò, Piero Giubilato, Francesco Iannuzzo, S. Mattiazzo, D. Pantano, Annunziata Sanseverino, Luca Silvestrin, M. Tessaro, Francesco Velardi, Jeffery Wyss
2011 J jnl
Operation of SiC normally-off JFET at the edges of its safe operating area.
Microelectron. Reliab.
Carmine Abbate, Giovanni Busatto, Francesco Iannuzzo
2010 J jnl
Editorial.
Microelectron. Reliab.
Giovanni Busatto, Francesco Iannuzzo
2010 J jnl
Experimental study and numerical investigation on the formation of single event gate damages induced on medium voltage power MOSFET.
Microelectron. Reliab.
Giovanni Busatto, Giuseppe Currò, Francesco Iannuzzo, Alberto Porzio, Annunziata Sanseverino, Francesco Velardi
2010 J jnl
IGBT RBSOA non-destructive testing methods: Analysis and discussion.
Microelectron. Reliab.
Carmine Abbate, Giovanni Busatto, Francesco Iannuzzo
2009 J jnl
Experimental study about gate oxide damages in patterned MOS capacitor irradiated with heavy ions.
Microelectron. Reliab.
Giovanni Busatto, Giuseppe Currò, Francesco Iannuzzo, Alberto Porzio, Annunziata Sanseverino, Francesco Velardi
2009 J jnl
Instable mechanisms during unclamped operation of high power IGBT modules.
Microelectron. Reliab.
Giovanni Busatto, Carmine Abbate, Francesco Iannuzzo, P. Cristofaro
2008 J jnl
Experimental evidence of "latent gate oxide damages" in medium voltage power MOSFET as a result of heavy ions exposure.
Microelectron. Reliab.
Giovanni Busatto, Giuseppe Currò, Francesco Iannuzzo, Alberto Porzio, Annunziata Sanseverino, Francesco Velardi
2008 J jnl
High performance, FPGA-based test apparatus for unclamped inductive switching of IGBTs.
Microelectron. Reliab.
Francesco Iannuzzo
2008 J jnl
IGBT modules robustness during turn-off commutation.
Microelectron. Reliab.
Giovanni Busatto, Carmine Abbate, B. Abbate, Francesco Iannuzzo
2008 J jnl
Race-Control Algorithm for the Full-Bridge PRCP Converter Using Cost-Effective FPGAs.
IEEE Trans. Ind. Electron.
Francesco Iannuzzo
2007 J jnl
The robustness of series-connected high power IGBT modules.
Microelectron. Reliab.
Carmine Abbate, Giovanni Busatto, Luigi Fratelli, Francesco Iannuzzo, B. Cascone, Roberta Manzo
2006 J jnl
Experimental study of power MOSFET's gate damage in radiation environment.
Microelectron. Reliab.
Giovanni Busatto, Francesco Iannuzzo, Alberto Porzio, Annunziata Sanseverino, Francesco Velardi, Giuseppe Currò
2006 J jnl
Investigation of MOSFET failure in soft-switching conditions.
Microelectron. Reliab.
Francesco Iannuzzo, Giovanni Busatto, Carmine Abbate
2006 J jnl
The high frequency behaviour of high voltage and current IGBT modules.
Microelectron. Reliab.
Carmine Abbate, Giovanni Busatto, Luigi Fratelli, Francesco Iannuzzo
2005 J jnl
Experimental and Numerical investigation about SEB/SEGR of Power MOSFET.
Microelectron. Reliab.
Giovanni Busatto, Alberto Porzio, Francesco Velardi, Francesco Iannuzzo, Annunziata Sanseverino, Giuseppe Currò
2005 J jnl
Non-destructive Testing Technique for MOSFET's Characterisation during Soft-Switching ZVS Operations.
Microelectron. Reliab.
Francesco Iannuzzo
2004 J jnl
Analysis and optimisation through innovative driving strategy of high power IGBT performances/EMI reduction trade-off for converter systems in railway applications.
Microelectron. Reliab.
Giovanni Busatto, Luigi Fratelli, Carmine Abbate, Roberta Manzo, Francesco Iannuzzo
2004 J jnl
The Role of the Parasitic BJT Parameters on the Reliability of New Generation Power MOSFET during Heavy Ion Exposure.
Microelectron. Reliab.
Francesco Velardi, Francesco Iannuzzo, Giovanni Busatto, Alberto Porzio, Annunziata Sanseverino, Giuseppe Currò, Alessandra Cascio, Ferruccio Frisina
2003 J jnl
Experimental study of charge generation mechanisms in power MOSFETs due to energetic particle impact
Microelectron. Reliab.
Francesco Velardi, Francesco Iannuzzo, Giovanni Busatto, Jeffery Wyss, A. Candelori
2003 J jnl
MAGFET based current sensing for power integrated circuit.
Microelectron. Reliab.
Giovanni Busatto, Roberto La Capruccia, Francesco Iannuzzo, Francesco Velardi, Roberto Roncella
2003 J jnl
Non-Destructive Detection of Current Distribution in Power Modules based on Pulsed Magnetic Measurement.
Microelectron. Reliab.
Giovanni Busatto, Francesco Iannuzzo, Francesco Velardi, M. Valentino, Giampiero Pepe
2003 J jnl
Reliability of Medium Blocking Voltage Power VDMOSFET in Radiation Environment.
Microelectron. Reliab.
Francesco Velardi, Francesco Iannuzzo, Giovanni Busatto, Jeffery Wyss, Annunziata Sanseverino, A. Candelori, Giuseppe Currò, Alessandra Cascio, Ferruccio Frisina
2002 J jnl
Non-destructive high temperature characterisation of high-voltage IGBTs.
Microelectron. Reliab.
Giovanni Busatto, B. Cascone, Luigi Fratelli, M. Balsamo, Francesco Iannuzzo, Francesco Velardi
2002 J jnl
The Reliability of New Generation Power MOSFETs in Radiation Environment.
Microelectron. Reliab.
Francesco Velardi, Francesco Iannuzzo, Giovanni Busatto, Jeffery Wyss, A. Kaminksy
2001 J jnl
Non-destructive tester for single event burnout of power diodes.
Microelectron. Reliab.
Giovanni Busatto, Francesco Iannuzzo, Francesco Velardi, Jeffery Wyss