Francesca Campabadal

12 papers Journal 7Unranked 5
YearRankTypeTitle / Venue / Authors
2023 J jnl
True Random Number Generator Based on the Variability of the High Resistance State of RRAMs.
IEEE Access
Maryam Akbari, Sattar Mirzakuchaki, Daniel Arumí, Salvador Manich, Álvaro Gómez-Pau, Francesca Campabadal, Mireia Bargallo González, Rosa Rodríguez-Montañés
2023 J jnl
Variability in Resistive Memories.
Adv. Intell. Syst.
Juan Bautista Roldán, Enrique Miranda, David Maldonado, Alexey N. Mikhaylov, Nikolay V. Agudov, Alexander A. Dubkov, Maria N. Koryazhkina, Mireia Bargallo González, Marco A. Villena, Samuel Poblador, Mercedes Saludes-Tapia, Rodrigo Picos, Francisco Jiménez-Molinos, Stavros G. Stavrinides, Emili Salvador, Francisco J. Alonso, Francesca Campabadal, Bernardo Spagnolo, Mario Lanza, Leon O. Chua
2022 — conf
An enhanced Verilog-A compact model for bipolar RRAMs including transient thermal effects and series resistance.
DCIS
David Maldonado, Francisco Jiménez-Molinos, Juan Bautista Roldán, M. B. González, Francesca Campabadal
2021 — conf
Simulation of serial RRAM cell based on a Verilog-A compact model.
DCIS
Binbin Yang, Daniel Arumí, Salvador Manich, Álvaro Gómez-Pau, Rosa Rodríguez-Montañés, Juan Bautista Roldán, Mireia Bargallo González, Francesca Campabadal, Liang Fang
2020 — conf
A physically based SPICE model for RRAMs including RTN.
DCIS
Gerardo González-Cordero, M. B. González, Francesca Campabadal, Francisco Jiménez-Molinos, Juan Bautista Roldán
2020 — conf
Impact of Intrinsic Series Resistance on the Reversible Dielectric Breakdown Kinetics in HfO2 Memristors.
IRPS
Mireia Bargallo González, Marcos Maestro-Izquierdo, Francesca Campabadal, Samuel Aldana, Francisco Jiménez-Molinos, Juan Bautista Roldán
2018 — conf
Device variability tolerance of a RRAM-based self-organizing neuromorphic system.
IRPS
Marta Pedro, Javier Martín-Martínez, Enrique Miranda, Rosana Rodríguez, Montserrat Nafría, M. B. González, Francesca Campabadal
2015 J jnl
Electrical characterization of multiple leakage current paths in HfO
Microelectron. Reliab.
Alberto Rodriguez-Fernandez, M. B. González, Francesca Campabadal, Jordi Suñé, Enrique Miranda
2013 J jnl
2 MeV electron irradiation effects on the electrical characteristics of MOS capacitors with ALD Al
Microelectron. Reliab.
Joan Marc Rafí, M. B. González, Kenichiro Takakura, I. Tsunoda, M. Yoneoka, Oihane Beldarrain, Miguel Zabala, Francesca Campabadal
2013 J jnl
Field-effect control of breakdown paths in HfO
Microelectron. Reliab.
X. Saura, X. Lian, David Jiménez, Enrique Miranda, Xavier Borrisé, Francesca Campabadal, Jordi Suñé
2006 J jnl
Hot-carrier-induced degradation of drain current hysteresis and transients in thin gate oxide floating body partially depleted SOI nMOSFETs.
Microelectron. Reliab.
Joan Marc Rafí, Eddy Simoen, Kiyoteru Hayama, Abdelkarim Mercha, Francesca Campabadal, Hidenori Ohyama, Cor Claeys
2002 J jnl
Electrical characteristics of high-energy proton irradiated ultra-thin gate oxides.
Microelectron. Reliab.
Joan Marc Rafí, B. Vergnet, Francesca Campabadal, Celeste Fleta, Luis Fonseca, Manuel Lozano, C. Martínez, Miguel Ullán