Fabian M. Bufler

11 papers Journal 6Unranked 5
YearRankTypeTitle / Venue / Authors
2024 — conf
Thermal Considerations for Block-Level PPA Assessment in Angstrom Era: A Comparison Study of Nanosheet FETs (A10) & Complementary FETs (A5).
VLSI Technology and Circuits
S. Mishra, Bjorn Vermeersch, Sankatali Venkateswarlu, Halil Kukner, Gioele Mirabelli, Fabian M. Bufler, Moritz Brunion, Dawit Burusie Abdi, Herman Oprins, Dwaipayan Biswas, Odysseas Zografos, Francky Catthoor, Pieter Weckx, Geert Hellings, James Myers, Julien Ryckaert
2024 — conf
Thermal Performance Evaluation of Multi-Core SOCs Using Power-Thermal Co-Simulation.
IRPS
Subrat Mishra, Bjorn Vermeersch, Sankatali Venkateswarlu, Halil Kukner, A. Sharma, G. Mirabeli, Fabian M. Bufler, Moritz Brunion, Dawit Burusie Abdi, Herman Oprins, Dwaipayan Biswas, Odysseas Zografos, Francky Catthoor, Pieter Weckx, Geert Hellings, James Myers, Julien Ryckaert
2022 — conf
PPAC of sheet-based CFET configurations for 4 track design with 16nm metal pitch.
VLSI Technology and Circuits
Pieter Schuddinck, Fabian M. Bufler, Yang Xiang, Anita Farokhnejad, Gioele Mirabelli, Anne Vandooren, Bilal Chehab, A. Gupta, César Roda Neve, Geert Hellings, Julien Ryckaert
2020 J jnl
Toward the Super Temporal Resolution Image Sensor with a Germanium Photodiode for Visible Light.
Sensors
Nguyen Hoai Ngo, Anh Quang Nguyen, Fabian M. Bufler, Yoshinari Kamakura, Hideki Mutoh, Takayoshi Shimura, Takuji Hosoi, Heiji Watanabe, Philippe Matagne, Kazuhiro Shimonomura, Kohsei Takehara, Edoardo Charbon, Takeharu Goji Etoh
2017 — conf
On the ballistic ratio in 14nm-Node FinFETs.
ESSDERC
Fabian M. Bufler, Kenichi Miyaguchi, Thomas Chiarella, N. Horiguchi, Anda Mocuta
2016 — conf
Empirical ballistic mobility model for drift-diffusion simulation.
ESSDERC
Axel Erlebach, K. H. Lee, Fabian M. Bufler
2003 J jnl
Proof of a simple time-step propagation scheme for Monte Carlo simulation.
Math. Comput. Simul.
Fabian M. Bufler, Andreas Schenk, Wolfgang Fichtner
2002 J jnl
Comparison of Single-Particle Monte Carlo Simulation with Measured Output Characteristics of an 0.1µm n-MOSFET.
VLSI Design
Fabian M. Bufler, Andreas Schenk, Christoph Zechner, Natsuko Inada, Yoshinori Asahi, Wolfgang Fichtner
2001 J jnl
Strain-Dependence of Electron Transport in Bulk Si and Deep-Submicron MOSFETs.
VLSI Design
Fabian M. Bufler, P. Douglas Yoder, Wolfgang Fichtner
1998 J jnl
Consistent Hydrodynamic and Monte-Carlo Simulation of SiGe HBTs Based on Table Models the Relaxation Times.
VLSI Design
Burkhard Neinhüs, Stefan Decker, Peter Graf, Fabian M. Bufler, Bernd Meinerzhagen
1998 J jnl
High-Field Hole Transport in Strained Si and SiGe by Monte Carlo Simulation: Full Band Versus Analytic Band Models.
VLSI Design
Fabian M. Bufler, P. Graf, Bernd Meinerzhagen