Esteve Amat

28 papers A 1C 3Misc 1Journal 11Unranked 12
YearRankTypeTitle / Venue / Authors
2018 J jnl
Memristive Crossbar Memory Lifetime Evaluation and Reconfiguration Strategies.
IEEE Trans. Emerg. Top. Comput.
Peyman Pouyan, Esteve Amat, Antonio Rubio
2018 C conf
Modem Gain-Cell Memories in Advanced Technologies.
IOLTS
Esteve Amat, Ramon Canal, Antonio Rubio
2018 J jnl
Optimization of FinFET-Based Gain Cells for Low Power Sub-
J. Low Power Electron.
Esteve Amat, Antonio Calomarde, Ramon Canal, Antonio Rubio
2018 — conf
Quantum dot location relevance into SET-FET circuits based on FinFET devices.
DCIS
Esteve Amat, Alberto del Moral, Joan R. Bausells, Francesc Pérez-Murano, Fabian J. Klüpfel
2017 J jnl
Resistive Random Access Memory Variability and Its Mitigation Schemes.
J. Low Power Electron.
Peyman Pouyan, Esteve Amat, Said Hamdioui, Antonio Rubio
2017 — conf
Suitability of FinFET introduction into eDRAM cells for operate at sub-threshold level.
PATMOS
Esteve Amat, Antonio Calomarde, Ramon Canal, Antonio Rubio
2016 J jnl
Feasibility of Embedded DRAM Cells on FinFET Technology.
IEEE Trans. Computers
Esteve Amat, Antonio Calomarde, Francesc Moll, Ramon Canal, Antonio Rubio
2016 — conf
Monitoring SRAM BTI degradation by current-based tracking technique.
NEWCAS
Peyman Pouyan, Esteve Amat, Antonio Rubio
2016 — conf
RRAM variability and its mitigation schemes.
PATMOS
Peyman Pouyan, Esteve Amat, Said Hamdioui, Antonio Rubio
2016 C conf
Statistical analysis and comparison of 2T and 3T1D e-DRAM minimum energy operation.
IOLTS
Manish Rana, Ramon Canal, Esteve Amat, Antonio Rubio
2015 J jnl
Adaptive Proactive Reconfiguration: A Technique for Process-Variability- and Aging-Aware SRAM Cache Design.
IEEE Trans. Very Large Scale Integr. Syst.
Peyman Pouyan, Esteve Amat, Antonio Rubio
2015 — conf
Analysis and design of an adaptive proactive reconfiguration approach for memristive crossbar memories.
NANOARCH
Peyman Pouyan, Esteve Amat, Antonio Rubio
2015 — conf
Memristive crossbar design and test in non-adaptive proactive reconfiguring scheme.
ECCTD
Peyman Pouyan, Esteve Amat, Antonio Rubio
2015 — conf
Statistical lifetime analysis of memristive crossbar matrix.
DTIS
Peyman Pouyan, Esteve Amat, Antonio Rubio
2015 — conf
UTBB FDSOI technology flexibility for ultra low power internet-of-things applications.
ESSDERC
Edith Beigné, Jean-Frédéric Christmann, Alexandre Valentian, Olivier Billoint, Esteve Amat, Dominique Morche
2015 J jnl
Variability Influence on FinFET-Based On-Chip Memory Data Paths.
J. Low Power Electron.
Esteve Amat, Antonio Calomarde, Ramon Canal, Antonio Rubio
2014 — conf
Impact of adaptive proactive reconfiguration technique on Vmin and lifetime of SRAM caches.
ISQED
Peyman Pouyan, Esteve Amat, Enrique Barajas, Antonio Rubio
2014 J jnl
SET and noise fault tolerant circuit design techniques: Application to 7 nm FinFET.
Microelectron. Reliab.
Antonio Calomarde, Esteve Amat, Francesc Moll, Julio Vigara, Antonio Rubio
2014 J jnl
Strategies to enhance the 3T1D-DRAM cell variability robustness beyond 22 nm.
Microelectron. J.
Esteve Amat, Carmen G. Almudéver, Nivard Aymerich, Ramon Canal, Antonio Rubio
2013 — conf
A single event transient hardening circuit design technique based on strengthening.
MWSCAS
Antonio Calomarde, Esteve Amat, Francesc Moll, Antonio Rubio
2013 A conf
Design and implementation of an adaptive proactive reconfiguration technique for SRAM caches.
DATE
Peyman Pouyan, Esteve Amat, Francesc Moll, Antonio Rubio
2013 — conf
Reliability study on technology trends beyond 20nm.
MIXDES
Esteve Amat, Antonio Calomarde, Antonio Rubio
2013 J jnl
Systematic and random variability analysis of two different 6T-SRAM layout topologies.
Microelectron. J.
Esteve Amat, E. Amatllé, Sergio Gómez, Nivard Aymerich, Carmen G. Almudéver, Francesc Moll, Antonio Rubio
2013 — conf
Variability robustness enhancement for 7nm FinFET 3T1D-DRAM cells.
MWSCAS
Esteve Amat, Carmen G. Almudéver, Nivard Aymerich, Antonio Rubio, Ramon Canal
2012 C conf
Analysis of FinFET technology on memories.
IOLTS
Esteve Amat, A. Asenov, Ramon Canal, Binjie Cheng, J.-Ll. Cruz, Zoran Jaksic, Miguel Miranda, Antonio Rubio, Paul Zuber
2012 Misc conf
Process variability-aware proactive reconfiguration technique for mitigating aging effects in nano scale SRAM lifetime.
VTS
Peyman Pouyan, Esteve Amat, Antonio Rubio
2010 J jnl
SPICE modelling of hot-carrier degradation in Si
Microelectron. Reliab.
Javier Martín-Martínez, Esteve Amat, M. B. González, P. Verheyen, Rosana Rodríguez, Montserrat Nafría, Xavier Aymerich, Eddy Simoen
2007 J jnl
Influence of the SiO
Microelectron. Reliab.
Esteve Amat, Rosana Rodríguez, Montserrat Nafría, Xavier Aymerich, James H. Stathis