Ernest Y. Wu

20 papers Journal 5Unranked 15
YearRankTypeTitle / Venue / Authors
2025 — conf
A Systematic Study of Temperature, Polarity, Thickness, and Ramp Rate Dependencies of Ramp-Voltage Stress for SiO2 and its Comparison with 2D Gate Dielectrics.
IRPS
Ernest Y. Wu, Richard G. Southwick, Baozhen Li
2025 — conf
Modulating Competition between Defect Generation and Annihilation in Dielectric Breakdown Showing a Full Range of Reverse, Diminishing, and Forward Area Scaling Trends.
IRPS
Ernest Y. Wu, Paul Jamison, Steven Consiglio, Takaaki Tsunomura, Takashi Ando
2024 — conf
A New Clustering-Function-Based Formulation of Temporal and Spatial Clustering Model Involving Area Scaling and its Application to Parameter Extraction.
IRPS
Ernest Y. Wu, Brian T. McGowan, Ronald Bolam, Huai Huang, Huimei Zhou, Miaomiao Wang
2024 — conf
Challenges of Gate Stack TDDB in Gate-All-Around Nanosheet Towards Further Scaling.
IRPS
Huimei Zhou, Miaomiao Wang, Ernest Y. Wu
2024 — conf
General Statistical Model for Dielectric Breakdown Including Reverse Area Scaling - The Role of Area-Dependent Dynamic Competition.
IRPS
Ernest Y. Wu, Takashi Ando, Paul Jamison
2022 — conf
A Flexible and Inherently Self-Consistent Methodology for MOL/BEOL/MIMCAP TDDB Applications with Excessive Variability-Induced Degradation.
IRPS
Ernest Y. Wu, Ron Bolam, Baozhen Li, Tian Shen, Barry P. Linder, Griselda Bonilla, Miaomiao Wang, Dechao Guo
2022 — conf
Filament Localization and Characterization in Hf02 ReRAM Cells using Laser Stimulation.
ESSDERC
Franco Stellari, Ernest Y. Wu, Martin M. Frank, Leonidas E. Ocala, Takashi Ando, Peilin Song
2022 — conf
Quantum Mechanical Connection of Schottky Emission Process and Its implications on Breakdown Methodology and Conduction Modeling for BEOL Low-k Dielectrics.
IRPS
Ernest Y. Wu, Baozhen Li
2021 — conf
TDDB Reliability in Gate-All-Around Nanosheet.
IRPS
Huimei Zhou, Miaomiao Wang, Ruqiang Bao, Tian Shen, Ernest Y. Wu, Richard G. Southwick, Jingyun Zhang, Veeraraghavan S. Basker, Dechao Guo
2019 — conf
Comprehensive Methodology for Multiple Spots Competing Progressive Breakdown for BEOL/FEOL Applications.
IRPS
Ernest Y. Wu, Baozhen Li, James H. Stathis, Andrew Kim
2019 — conf
Reliability Challenges with Materials for Analog Computing.
IRPS
Eduard A. Cartier, Wanki Kim, Nanbo Gong, Tayfun Gokmen, Martin M. Frank, Douglas M. Bishop, Youngseok Kim, Seyoung Kim, Takashi Ando, Ernest Y. Wu, Praneet Adusumilli, John Rozen, Paul M. Solomon, Wilfried Haensch, Matthew J. BrightSky, Abu Sebastian, Geoffrey W. Burr, Vijay Narayanan
2019 — conf
Transformation of Ramped Current Stress VBDto Constant Voltage Stress TDDB TBD.
IRPS
Andrew Kim, Ernest Y. Wu, Baozhen Li, Barry P. Linder
2018 — conf
Elapsed-time statistics of successive breakdown in the presence of variability for dielectric breakdown in BEOL/MOL/FEOL applications.
IRPS
Ernest Y. Wu, Andrew Kim, Baozhen Li, James H. Stathis
2015 — conf
A critical analysis of sampling-based reconstruction methodology for dielectric breakdown systems (BEOL/MOL/FEOL).
IRPS
Ernest Y. Wu, James H. Stathis, Baozhen Li, Barry P. Linder, Kai Zhao, Griselda Bonilla
2013 — conf
Improving and optimizing reliability in future technologies with high-κ dielectrics.
VLSI-DAT
Barry P. Linder, Eduard Cartier, S. Krishnan, Ernest Y. Wu
2005 J jnl
Power-law voltage acceleration: A key element for ultra-thin gate oxide reliability.
Microelectron. Reliab.
Ernest Y. Wu, Jordi Suñé
2004 J jnl
Voltage acceleration and t63.2 of 1.6-10 nm gate oxides.
Microelectron. Reliab.
Rolf-Peter Vollertsen, Ernest Y. Wu
2003 J jnl
Critical reliability challenges in scaling SiO
Microelectron. Reliab.
Ernest Y. Wu, Jordi Suñé, Wing L. Lai, Alex Vayshenker, Edward J. Nowak, David L. Harmon
2003 J jnl
Statistics of soft and hard breakdown in thin SiO
Microelectron. Reliab.
Jordi Suñé, Ernest Y. Wu, David Jiménez, Wing L. Lai
2002 J jnl
CMOS scaling beyond the 100-nm node with silicon-dioxide-based gate dielectrics.
IBM J. Res. Dev.
Ernest Y. Wu, Edward J. Nowak, Alex Vayshenker, Wing L. Lai, David L. Harmon