Erik Bury - RankMe

40 papers Journal 2Unranked 38

Year	Rank	Type	Title / Venue / Authors
2025	—	`conf`	A Carrier-Energy-Based Compact Model for Hot-Carrier Degradation Implemented in Verilog-A. IRPS Dishant Sangani, Michiel Vandemaele, Stanislav Tyaginov, Erik Bury, Ben Kaczer, Georges G. E. Gielen
2025	—	`conf`	Effects of Temperature and Device-to-Device Variability in pFET-Based Bias Temperature Instability Reservoir Computing. IRPS Yuanyang Guo, Robin Degraeve, Pablo Saraza-Canflanca, Ben Kaczer, Erik Bury, Ingrid Verbauwhede
2025	—	`conf`	Investigation of Cryogenic Aging in 28 nm CMOS: Suppression of BTI and HCD in Circuits and SRAM. IRPS Javier Diaz-Fortuny, Mahdi Benkhelifa, Alexander Grill, Erik Bury, Robin Degraeve, Ben Kaczer, Hussam Amrouch
2024	—	`conf`	Demonstration of Chip Overclock Detection by Employing Tamper-Aware Odometer Technology. IRPS Javier Diaz-Fortuny, Pablo Saraza-Canflanca, Alex Romano-Molar, Erik Bury, Robin Degraeve, Ben Kaczer
2024	—	`conf`	Exploiting Bias Temperature Instability for Reservoir Computing in Edge Artificial Intelligence Applications. IRPS Y. Guo, Robin Degraeve, Michiel Vandemaele, Pablo Saraza-Canflanca, Jacopo Franco, Ben Kaczer, Erik Bury, Ingrid Verbauwhede
2024	—	`conf`	Reducing Reservoir Dimensionality with Phase Space Construction for Simplified Hardware Implementation. ICANN (10) Yuanyang Guo, Robin Degraeve, Philippe Roussel, Ben Kaczer, Erik Bury, Ingrid Verbauwhede
2024	—	`conf`	Statistical Characterization of Off-State Stress Degradation in Planar HKMG nFETs Using Device Arrays. IRPS Pablo Saraza-Canflanca, Dishant Sangani, Javier Diaz-Fortuny, Stanislav Tyaginov, Georges G. E. Gielen, Erik Bury, Ben Kaczer
2023	—	`conf`	Improving the Tamper-Aware Odometer Concept by Enhancing Dynamic Stress Operation. IRPS Javier Diaz-Fortuny, Dishant Sangani, Pablo Saraza-Canflanca, Erik Bury, Robin Degraeve, Ben Kaczer
2023	—	`conf`	Investigating Nanowire, Nanosheet and Forksheet FET Hot-Carrier Reliability via TCAD Simulations: Invited Paper. IRPS Michiel Vandemaele, Ben Kaczer, Erik Bury, Jacopo Franco, Adrian Chasin, Alexander Makarov, Hans Mertens, Geert Hellings, Guido Groeseneken
2023	—	`conf`	Reliability challenges in Forksheet Devices: (Invited Paper). IRPS Erik Bury, Michiel Vandemaele, Jacopo Franco, Adrian Chasin, Stanislav Tyaginov, A. Vandooren, Romain Ritzenthaler, Hans Mertens, Javier Diaz-Fortuny, N. Horiguchi, Dimitri Linten, Ben Kaczer
2023	—	`conf`	The Role of Mobility Degradation in the BTI-Induced RO Aging in a 28-nm Bulk CMOS Technology: (Student paper). IRPS Dishant Sangani, Javier Diaz-Fortuny, Erik Bury, Ben Kaczer, Georges G. E. Gielen
2023	—	`conf`	Using dedicated device arrays for the characterization of TDDB in a scaled HK/MG technology. IRPS Pablo Saraza-Canflanca, Javier Diaz-Fortuny, Andrea Vici, Erik Bury, Robin Degraeve, Ben Kaczer
2022	—	`conf`	A Ring-Oscillator-Based Degradation Monitor Concept with Tamper Detection Capability. IRPS Javier Diaz-Fortuny, Pablo Saraza-Canflanca, Erik Bury, Michiel Vandemaele, Ben Kaczer, Robin Degraeve
2022	—	`conf`	Evaluating Forksheet FET Reliability Concerns by Experimental Comparison with Co-integrated Nanosheets. IRPS Erik Bury, Adrian Vaisman Chasin, Ben Kaczer, Michiel Vandemaele, Stanislav Tyaginov, Jacopo Franco, Romain Ritzenthaler, Hans Mertens, Pieter Weckx, N. Horiguchi, Dimitri Linten
2022	—	`conf`	Impact of channel thickness scaling on the performance of GaN-on-Si RF HEMTs on highly C-doped GaN buffer. ESSDERC AliReza Alian, Raúl Rodríguez, Sachin Yadav, Uthayasankaran Peralagu, Arturo Sibaja Hernandez, Vamsi Putcha, Ming Zhao, Rana Y. El Kashlan, Bjorn Vermeersch, Hao Yu, Erik Bury, Ahmad Khaled, Nadine Collaert, Bertrand Parvais
2022	—	`conf`	Self-Heating in iN8-iN2 CMOS Logic Cells: Thermal Impact of Architecture (FinFET, Nanosheet, Forksheet and CFET) and Scaling Boosters. VLSI Technology and Circuits Bjorn Vermeersch, Erik Bury, Yang Xiang, Pieter Schuddinck, Krishna K. Bhuwalka, Geert Hellings, Julien Ryckaert
2022	—	`conf`	Simulation Comparison of Hot-Carrier Degradation in Nanowire, Nanosheet and Forksheet FETs. IRPS Michiel Vandemaele, Ben Kaczer, Stanislav Tyaginov, Erik Bury, Adrian Vaisman Chasin, Jacopo Franco, Alexander Makarov, Hans Mertens, Geert Hellings, Guido Groeseneken
2022	—	`conf`	Temperature Dependent Mismatch and Variability in a Cryo-CMOS Array with 30k Transistors. IRPS Alexander Grill, V. John, Jakob Michl, A. Beckers, Erik Bury, Stanislav Tyaginov, Bertrand Parvais, Adrian Vaisman Chasin, Tibor Grasser, Michael Waltl, Ben Kaczer, Bogdan Govoreanu
2022	—	`conf`	Understanding and Modeling Opposite Impacts of Self-Heating on Hot-Carrier Degradation in n- and p-Channel Transistors. IRPS Stanislav Tyaginov, Alexander Makarov, Al-Moatasem Bellah El-Sayed, Adrian Vaisman Chasin, Erik Bury, Markus Jech, Michiel Vandemaele, Alexander Grill, An De Keersgieter, Mikhail I. Vexler, Geert Eneman, Ben Kaczer
2021	—	`conf`	A BSIM-Based Predictive Hot-Carrier Aging Compact Model. IRPS Yang Xiang, Stanislav Tyaginov, Michiel Vandemaele, Zhicheng Wu, Jacopo Franco, Erik Bury, Brecht Truijen, Bertrand Parvais, Dimitri Linten, Ben Kaczer
2021	—	`conf`	Physics-based device aging modelling framework for accurate circuit reliability assessment. IRPS Zhicheng Wu, Jacopo Franco, Brecht Truijen, Philippe Roussel, Stanislav Tyaginov, Michiel Vandemaele, Erik Bury, Guido Groeseneken, Dimitri Linten, Ben Kaczer
2021	—	`conf`	The properties, effect and extraction of localized defect profiles from degraded FET characteristics. IRPS Michiel Vandemaele, Ben Kaczer, Stanislav Tyaginov, Jacopo Franco, Robin Degraeve, Adrian Vaisman Chasin, Zhicheng Wu, Erik Bury, Yang Xiang, Hans Mertens, Guido Groeseneken
2020	—	`conf`	Exploring the DC reliability metrics for scaled GaN-on-Si devices targeted for RF/5G applications. IRPS Vamsi Putcha, Erik Bury, Jacopo Franco, Amey Walke, Simeng Zhao, Uthayasankaran Peralagu, Ming Zhao, AliReza Alian, Ben Kaczer, Niamh Waldron, Dimitri Linten, Bertrand Parvais, Nadine Collaert
2020	—	`conf`	Relevance of fin dimensions and high-pressure anneals on hot-carrier degradation. IRPS Adrian Vaisman Chasin, Jacopo Franco, Erik Bury, Romain Ritzenthaler, Eugenio Dentoni Litta, Alessio Spessot, Naoto Horiguchi, Dimitri Linten, Ben Kaczer
2020	—	`conf`	Reliability and Variability of Advanced CMOS Devices at Cryogenic Temperatures. IRPS Alexander Grill, Erik Bury, Jakob Michl, Stanislav Tyaginov, Dimitri Linten, Tibor Grasser, Bertrand Parvais, Ben Kaczer, Michael Waltl, Iuliana P. Radu
2020	—	`conf`	The Influence of Gate Bias on the Anneal of Hot-Carrier Degradation. IRPS Michiel Vandemaele, Kai-Hsin Chuang, Erik Bury, Stanislav Tyaginov, Guido Groeseneken, Ben Kaczer
2019	J	`jnl`	A Physically Unclonable Function Using Soft Oxide Breakdown Featuring 0% Native BER and 51.8 fJ/bit in 40-nm CMOS. IEEE J. Solid State Circuits Kai-Hsin Chuang, Erik Bury, Robin Degraeve, Ben Kaczer, Dimitri Linten, Ingrid Verbauwhede
2019	—	`conf`	Array-Based Statistical Characterization of CMOS Degradation Modes and Modeling of the Time-Dependent Variability Induced by Different Stress Patterns in the {V IRPS Erik Bury, Adrian Vaisman Chasin, Michiel Vandemaele, Simon Van Beek, Jacopo Franco, Ben Kaczer, Dimitri Linten
2019	—	`conf`	Full (V IRPS Michiel Vandemaele, Ben Kaczer, Stanislav Tyaginov, Zlatan Stanojevic, Alexander Makarov, Adrian Vaisman Chasin, Erik Bury, Hans Mertens, Dimitri Linten, Guido Groeseneken
2018	—	`conf`	A Physically Unclonable Function with 0% BER Using Soft Oxide Breakdown in 40nm CMOS. A-SSCC Kai-Hsin Chuang, Erik Bury, Robin Degraeve, Ben Kaczer, Dimitri Linten, Ingrid Verbauwhede
2018	J	`jnl`	A brief overview of gate oxide defect properties and their relation to MOSFET instabilities and device and circuit time-dependent variability. Microelectron. Reliab. Ben Kaczer, Jacopo Franco, Pieter Weckx, Philippe Roussel, Vamsi Putcha, Erik Bury, Marko Simicic, Adrian Vaisman Chasin, Dimitri Linten, Bertrand Parvais, Francky Catthoor, Gerhard Rzepa, Michael Waltl, Tibor Grasser
2018	—	`conf`	A multi-bit/cell PUF using analog breakdown positions in CMOS. IRPS Kai-Hsin Chuang, Erik Bury, Robin Degraeve, Ben Kaczer, T. Kallstenius, Guido Groeseneken, Dimitri Linten, Ingrid Verbauwhede
2018	—	`conf`	Experimental extraction of BEOL composite equivalent thermal conductivities for application in self-heating simulations. ESSDERC Erik Bury, Ben Kaczer, Simon Van Beek, Dimitri Linten
2018	—	`conf`	Hot electron and hot hole induced degradation of SiGe p-FinFETs studied by degradation maps in the entire bias space. IRPS Jacopo Franco, Ben Kaczer, Adrian Vaisman Chasin, Erik Bury, Dimitri Linten
2018	—	`conf`	Self-heating-aware CMOS reliability characterization using degradation maps. IRPS Erik Bury, Adrian Vaisman Chasin, Ben Kaczer, Kai-Hsin Chuang, Jacopo Franco, Marko Simicic, Pieter Weckx, Dimitri Linten
2015	—	`conf`	Characterization of time-dependent variability using 32k transistor arrays in an advanced HK/MG technology. IRPS Pieter Weckx, Ben Kaczer, C. Chen, Jacopo Franco, Erik Bury, Kaushik Chanda, J. Watt, Philippe J. Roussel, Francky Catthoor, Guido Groeseneken
2015	—	`conf`	NBTI in Si0.55Ge0.45 cladding p-FinFETs: Porting the superior reliability from planar to 3D architectures. IRPS Jacopo Franco, Ben Kaczer, Philippe J. Roussel, Erik Bury, Hans Mertens, Romain Ritzenthaler, Tibor Grasser, Naoto Horiguchi, Aaron Thean, Guido Groeseneken
2015	—	`conf`	Origins and implications of increased channel hot carrier variability in nFinFETs. IRPS Ben Kaczer, Jacopo Franco, M. Cho, Tibor Grasser, Philippe J. Roussel, Stanislav Tyaginov, M. Bina, Yannick Wimmer, Luis-Miguel Procel, Lionel Trojman, Felice Crupi, Gregory Pitner, Vamsi Putcha, Pieter Weckx, Erik Bury, Z. Ji, An De Keersgieter, Thomas Chiarella, Naoto Horiguchi, Guido Groeseneken, Aaron Thean
2015	—	`conf`	The defect-centric perspective of device and circuit reliability - From individual defects to circuits. ESSDERC Ben Kaczer, Jacopo Franco, Pieter Weckx, Philippe Roussel, Erik Bury, Moonju Cho, Robin Degraeve, Dimitri Linten, Guido Groeseneken, Halil Kukner, Praveen Raghavan, Francky Catthoor, Gerhard Rzepa, Wolfgang Gös, Tibor Grasser
2012	—	`conf`	Low-power DRAM-compatible Replacement Gate High-k/Metal Gate stacks. ESSDERC Romain Ritzenthaler, Tom Schram, Erik Bury, Jérôme Mitard, L.-Å. Ragnarsson, Guido Groeseneken, N. Horiguchi, Aaron Thean, Alessio Spessot, Christian Caillat, V. Srividya, Pierre Fazan