Erfan Abbasian

20 papers Journal 20
YearRankTypeTitle / Venue / Authors
2025 J jnl
A CNTFET-Based 10T Static Memory Design Immune to Read and Half-Select Disturbs for Low-Power Wearable Biomedical Systems.
IEEE Access
Shams-Ul-Haq, Erfan Abbasian, Imran Ahmed Khan, Owais Ahmad Shah, Arun Balodi, Manoj Tolani, Vakkalakula Bharath Sreenivasulu
2025 J jnl
A Soft Error Self-Resilience Radiation-Hardened 14T SRAM for Aerospace Applications.
IEEE Access
Guguloth Anjaneyulu, Asisa Kumar Panigrahy, Mukku Pavan Kumar, Shams-Ul-Haq, Abdolreza Darabi, Erfan Abbasian, Priyanka Sharma, M. Durga Prakash
2025 J jnl
Energy-Efficient Buffer-Based Ternary SRAM Cell With Application to Image Processing.
IEEE Access
Shams-Ul-Haq, Erfan Abbasian, Abdolreza Darabi, Imran Ahmed Khan, Owais Ahmad Shah, Vakkalakula Bharath Sreenivasulu
2025 J jnl
Hybrid Cross-Coupled Inverter-Based 8T SRAM Design With Half-Selection Immunity and Enhanced Stability for Power-Constrained Applications.
IEEE Access
Amir Mohammad Karimi Forood, Shams-Ul-Haq, Erfan Abbasian, Ajay Rupani, Deepika Bansal
2025 J jnl
Schmitt Trigger-Based Low Leakage and Half-Select Free Near-Threshold 10T SRAM Architecture.
J. Circuits Syst. Comput.
Appikatla Phani Kumar, Rohit Lorenzo, Erfan Abbasian, Ashish Sachdeva
2025 J jnl
Synthesis of a CNTFET-Based Ternary Full Adder Using a Carry-Less Ternary Half Adder.
IEEE Trans. Comput. Aided Des. Integr. Circuits Syst.
Shams-Ul-Haq, Erfan Abbasian, Maedeh Orouji, Sajad A. Loan, Tabassum Khurshid
2024 J jnl
A Low-Energy, Stable, Single-Bitline Accessed FinFET 9T-SRAM.
Circuits Syst. Signal Process.
Erfan Abbasian, Maryam Nayeri, Elangovan Mani
2023 J jnl
An ultra-low power and energy-efficient ternary Half-Adder based on unary operators and two ternary 3:1 multiplexers in 32-nm GNRFET technology.
Int. J. Circuit Theory Appl.
Erfan Abbasian, Maedeh Orouji, Sana Taghipour Anvari, Alireza Asadi, Ehsan Mahmoodi
2023 J jnl
Design of a 10-nm FinFET 11 T Near-Threshold SRAM Cell for Low-Energy Internet-of-Things Applications.
Circuits Syst. Signal Process.
Erfan Abbasian, Bahare Grailoo, Mahdieh Nayeri
2023 J jnl
Energy-Efficient Single-Ended Read/Write 10T Near-Threshold SRAM.
IEEE Trans. Circuits Syst. I Regul. Pap.
Erfan Abbasian, Sobhan Sofimowloodi
2022 J jnl
A Highly Stable Low-Energy 10T SRAM for Near-Threshold Operation.
IEEE Trans. Circuits Syst. I Regul. Pap.
Erfan Abbasian
2022 J jnl
A Reliable Low Standby Power 10T SRAM Cell With Expanded Static Noise Margins.
IEEE Trans. Circuits Syst. I Regul. Pap.
Erfan Abbasian, Farzaneh Izadinasab, Morteza Gholipour
2022 J jnl
A Schmitt-Trigger-Based Low-Voltage 11 T SRAM Cell for Low-Leakage in 7-nm FinFET Technology.
Circuits Syst. Signal Process.
Erfan Abbasian, Elangovan Mani, Morteza Gholipour, Mehrzad Karamimanesh, Mohd Sahid, Adil Zaidi
2022 J jnl
A low-leakage single-bitline 9T SRAM cell with read-disturbance removal and high writability for low-power biomedical applications.
Int. J. Circuit Theory Appl.
Erfan Abbasian, Morteza Gholipour
2022 J jnl
Design and investigation of stability- and power-improved 11T SRAM cell for low-power devices.
Int. J. Circuit Theory Appl.
Erfan Abbasian, Shilpi Birla, Emad Mojaveri Moslem
2022 J jnl
Design of a Highly Stable and Robust 10T SRAM Cell for Low-Power Portable Applications.
Circuits Syst. Signal Process.
Erfan Abbasian, Morteza Gholipour
2022 J jnl
Improved read/write assist mechanism for 10-transistor static random access memory cell.
Int. J. Circuit Theory Appl.
Erfan Abbasian, Morteza Gholipour
2022 J jnl
Ultra-low-power and stable 10-nm FinFET 10T sub-threshold SRAM.
Microelectron. J.
Erfan Abbasian, Shilpi Birla, Morteza Gholipour
2021 J jnl
Performance evaluation of GNRFET and TMDFET devices in static random access memory cells design.
Int. J. Circuit Theory Appl.
Erfan Abbasian, Morteza Gholipour, Farzaneh Izadinasab
2021 J jnl
Single-ended half-select disturb-free 11T static random access memory cell for reliable and low power applications.
Int. J. Circuit Theory Appl.
Erfan Abbasian, Morteza Gholipour