Enrique Miranda

35 papers C 2Journal 24Unranked 9
YearRankTypeTitle / Venue / Authors
2025 — conf
Memristive Model of a Sb2Se3 Solar Cell.
ICICDT
Didac Vega, Rodrigo Picos, Angel Rodríguez, Yash Gupta, Oscar Camps, Edgardo Saucedo, Carola de Benito, Jordi Llorca, Stavros G. Stavrinides, Enrique Miranda
2025 J jnl
Reliability Assessment of Optical Physical Unclonable Functions Based on the Spatial Distribution of Catastrophic Failure Sites in MIM Structures.
IEEE Access
Marc Porti, Alvaro Solis, Alex Calatayud, Montserrat Nafría, Enrique Miranda
2025 — conf
Simulation Study of the Maximum Power Dissipation-Energy Consumption Dilemma in Memristors Using the Dynamic Memdiode Model.
SMACD
Enrique Miranda, E. Piros, Fernando L. Aguirre, X. Pérez, T. Kim, J. P. Schreyer, Jonas Gehrunger, T. Oster, Klaus Hofmann, Jordi Suñé, Christian Hochberger, L. Alff
2023 J jnl
Variability in Resistive Memories.
Adv. Intell. Syst.
Juan Bautista Roldán, Enrique Miranda, David Maldonado, Alexey N. Mikhaylov, Nikolay V. Agudov, Alexander A. Dubkov, Maria N. Koryazhkina, Mireia Bargallo González, Marco A. Villena, Samuel Poblador, Mercedes Saludes-Tapia, Rodrigo Picos, Francisco Jiménez-Molinos, Stavros G. Stavrinides, Emili Salvador, Francisco J. Alonso, Francesca Campabadal, Bernardo Spagnolo, Mario Lanza, Leon O. Chua
2022 C conf
Beneficial Role of Noise in Hf-based Memristors.
ISCAS
Rosana Rodríguez, Javier Martín-Martínez, Emili Salvador Aguilera, Albert Crespo-Yepes, Enrique Miranda, Montserrat Nafría, Antonio Rubio, Vasileios G. Ntinas, Georgios Ch. Sirakoulis
2022 J jnl
Connectome of memristive nanowire networks through graph theory.
Neural Networks
Gianluca Milano, Enrique Miranda, Carlo Ricciardi
2021 — conf
Line Resistance Impact in Memristor-based Multi Layer Perceptron for Pattern Recognition.
LASCAS
Fernando L. Aguirre, Sebastián Matías Pazos, Felix Palumbo, N. Gomez, Enrique Miranda, Jordi Suñé
2020 J jnl
Application of the Quasi-Static Memdiode Model in Cross-Point Arrays for Large Dataset Pattern Recognition.
IEEE Access
Fernando Leonel Aguirre, Sebastián Matías Pazos, Felix Palumbo, Jordi Suñé, Enrique Miranda
2020 — conf
Offline Training for Memristor-based Neural Networks.
EUSIPCO
Guillem Boquet, Edwar Macias Toro, Antoni Morell, Javier Serrano, Enrique Miranda, José López Vicario
2018 J jnl
A new method for estimating the conductive filament temperature in OxRAM devices based on escape rate theory.
Microelectron. Reliab.
Alberto Rodriguez-Fernandez, J. Muñoz-Gorriz, Jordi Suñé, Enrique Miranda
2018 — conf
Device variability tolerance of a RRAM-based self-organizing neuromorphic system.
IRPS
Marta Pedro, Javier Martín-Martínez, Enrique Miranda, Rosana Rodríguez, Montserrat Nafría, M. B. González, Francesca Campabadal
2018 J jnl
SPICE simulation of memristive circuits based on memdiodes with sigmoidal threshold functions.
Int. J. Circuit Theory Appl.
German Agustin Patterson, Jordi Suñé, Enrique Miranda
2017 — conf
Equivalent circuit model for the electron transport in 2D resistive switching material systems.
ESSDERC
Enrique Miranda, Jordi Suñé, Chengbin Pan, Marco A. Villena, Na Xiao, Mario Lanza
2017 J jnl
Identification of the generation/rupture mechanism of filamentary conductive paths in ReRAM devices using oxide failure analysis.
Microelectron. Reliab.
Alberto Rodriguez-Fernandez, Carlo Cagli, Luca Perniola, Jordi Suñé, Enrique Miranda
2017 J jnl
Voltage-Driven Hysteresis Model for Resistive Switching: SPICE Modeling and Circuit Applications.
IEEE Trans. Comput. Aided Des. Integr. Circuits Syst.
German Agustin Patterson, Jordi Suñé, Enrique Miranda
2015 J jnl
Electrical characterization of multiple leakage current paths in HfO
Microelectron. Reliab.
Alberto Rodriguez-Fernandez, M. B. González, Francesca Campabadal, Jordi Suñé, Enrique Miranda
2015 J jnl
Equivalent circuit modeling of the bistable conduction characteristics in electroformed thin dielectric films.
Microelectron. Reliab.
Juli Blasco, Nestor Fabian Ghenzi, Jordi Suñé, Pablo Levy, Enrique Miranda
2015 — conf
Modeling of the conduction characteristics of voltage-driven bipolar RRAMs including turning point effects.
ESSDERC
Juli Blasco, Jordi Suñé, Enrique Miranda
2015 — conf
Threading dislocations in III-V semiconductors: Analysis of electrical conduction.
IRPS
Violaine Iglesias, Marc Porti, Carlos Couso, Q. Wu, S. Claramunt, Montserrat Nafría, Enrique Miranda, Neus Domingo, Gennadi Bersuker, Aaron Cordes
2014 J jnl
Single-parameter model for the post-breakdown conduction characteristics of HoTiO
Microelectron. Reliab.
Juli Blasco, Helena Castán, Héctor García, Salvador Dueñas, Jordi Suñé, Marianna Kemell, Kaupo Kukli, Mikko Ritala, Markku Leskelä, Enrique Miranda
2013 J jnl
Direct observation of the generation of breakdown spots in MIM structures under constant voltage stress.
Microelectron. Reliab.
X. Saura, D. Moix, Jordi Suñé, Paul K. Hurley, Enrique Miranda
2013 J jnl
Field-effect control of breakdown paths in HfO
Microelectron. Reliab.
X. Saura, X. Lian, David Jiménez, Enrique Miranda, Xavier Borrisé, Francesca Campabadal, Jordi Suñé
2012 J jnl
Analysis and modeling of the gate leakage current in advanced nMOSFET devices with severe gate-to-drain dielectric breakdown.
Microelectron. Reliab.
Enrique Miranda, Takamasa Kawanago, Kuniyuki Kakushima, Jordi Suñé, Hiroshi Iwai
2011 J jnl
An extension of the Curie-von Schweidler law for the leakage current decay in MIS structures including progressive breakdown.
Microelectron. Reliab.
Enrique Miranda, C. Mahata, Tanmoy Das, Chinmay K. Maiti
2011 — conf
Industrial electrostatics perforation improvement by power controlled discharges.
EUROCON
Carolina Garzon, Enrique Miranda, Cynthia S. Martinez-Cisneros, Julian Alonso, Joan J. Garcia-Garcia
2010 C conf
Effect of the Electric Discharge Confinement on the Perforation Density of Porous Materials.
IAS
Joan J. Garcia-Garcia, Enrique Miranda, Carolina Garzon, Cynthia S. Martinez-Cisneros, Julian Alonso
2010 J jnl
Exploratory analysis of the breakdown spots spatial distribution in metal gate/high-K/III-V stacks using functional summary statistics.
Microelectron. Reliab.
Enrique Miranda, Eamon O'Connor, Paul K. Hurley
2009 J jnl
Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks.
Microelectron. Reliab.
Enrique Miranda, Javier Martín-Martínez, Eamon O'Connor, G. Hughes, P. Casey, Karim Cherkaoui, S. Monaghan, R. Long, D. O'Connell, Paul K. Hurley
2008 J jnl
Compact modeling of the non-linear post-breakdown current in thin gate oxides using the generalized diode equation.
Microelectron. Reliab.
Enrique Miranda
2005 J jnl
A function-fit model for the hard breakdown I-V characteristics of ultra-thin oxides in MOS structures.
Microelectron. Reliab.
Enrique Miranda, B. Brandala
2005 J jnl
Degradation of high-K LA
Microelectron. Reliab.
Enrique Miranda, Joel Molina Reyes, Y. Kim, Hiroshi Iwai
2005 J jnl
The TDDB power-law model - Physics and experimental evidences.
Microelectron. Reliab.
Rolf-Peter Vollertsen, Enrique Miranda
2004 J jnl
Electron transport through broken down ultra-thin SiO
Microelectron. Reliab.
Enrique Miranda, Jordi Suñé
2004 J jnl
Single-equation model for low and high voltage soft breakdown conduction.
Microelectron. Reliab.
Enrique Miranda, E. Mallaina
2002 J jnl
Modeling of the I-V characteristics of high-field stressed MOS structures using a Fowler-Nordheim-type tunneling expression.
Microelectron. Reliab.
Enrique Miranda, Gabriel Redin, Adrián Faigón