Enrico Sangiorgi

22 papers Journal 13Unranked 9

Year	Rank	Type	Title / Venue / Authors
2025	—	`conf`	HTGB and DGS Reliability Assessment of e-mode GaN-HEMTs with Ferroelectric Gate Stack. IRPS Andrea Natale Tallarico, Maurizio Millesimo, U. Ibrar, Enrico Sangiorgi, Claudio Fiegna, T.-Y. Yang, J.-S. Wu, H. Iwai, E.-Y. Chang
2025	—	`conf`	RTN Analysis of Schottky p-GaN Gate HEMTs Under Forward Gate Stress: Impact of Temperature. IRPS Maurizio Millesimo, Lorenzo Valentini, Claudio Fiegna, Enrico Sangiorgi, Andrea Natale Tallarico, Matteo Borga, Niels Posthuma, Stefaan Decoutere, Benoit Bakeroot
2024	—	`conf`	Analysis of RTN Induced by Forward Gate Stress in GaN HEMTs with a Schottky p-GaN Gate. IRPS Maurizio Millesimo, Claudio Fiegna, Benoit Bakeroot, Matteo Borga, Niels Posthuma, Stefaan Decoutere, Enrico Sangiorgi, Andrea Natale Tallarico
2022	—	`conf`	Gate Reliability of p-GaN Power HEMTs Under Pulsed Stress Condition. IRPS Maurizio Millesimo, Benoit Bakeroot, Matteo Borga, Niels Posthuma, Stefaan Decoutere, Enrico Sangiorgi, Claudio Fiegna, Andrea Natale Tallarico
2020	—	`conf`	Full Understanding of Hot Electrons and Hot/Cold Holes in the Degradation of p-channel Power LDMOS Transistors. IRPS Andrea Natale Tallarico, Susanna Reggiani, Riccardo Depetro, Giuseppe Croce, Enrico Sangiorgi, Claudio Fiegna
2019	—	`conf`	Characterization and Modeling of BTI in SiC MOSFETs. ESSDERC Davide Cornigli, Andrea Natale Tallarico, Susanna Reggiani, Claudio Fiegna, Enrico Sangiorgi, Luis Sanchez, Carlos Valdivieso, Giuseppe Consentino, Felice Crupi
2019	—	`conf`	Perimeter Driven Transport in the p-GaN Gate as a Limiting Factor for Gate Reliability. IRPS Steve Stoffels, Niels Posthuma, Stefaan Decoutere, Benoit Bakeroot, Andrea Natale Tallarico, Enrico Sangiorgi, Claudio Fiegna, J. Zheng, X. Ma, Matteo Borga, Elena Fabris, Matteo Meneghini, Enrico Zanoni, Gaudenzio Meneghesso, Juraj Priesol, Alexander Satka
2019	—	`conf`	TCAD predictions of hot-electron injection in p-type LDMOS transistors. ESSDERC Federico Giuliano, Riccardo Depetro, Giuseppe Croce, Andrea Natale Tallarico, Susanna Reggiani, Antonio Gnudi, Enrico Sangiorgi, Claudio Fiegna, Mattia Rossetti, Antonio Molfese, Stefano Manzini
2018	J	`jnl`	TCAD investigation on hot-electron injection in new-generation technologies. Microelectron. Reliab. Susanna Reggiani, Mattia Rossetti, Antonio Gnudi, Andrea Natale Tallarico, Antonio Molfese, Stefano Manzini, Riccardo Depetro, Giuseppe Croce, Enrico Sangiorgi, Claudio Fiegna
2017	J	`jnl`	Doing a Lot with a Little: Micropower Conversion and Management for Ambient-Powered Electronics. Computer Aldo Romani, Marco Tartagni, Enrico Sangiorgi
2017	J	`jnl`	Investigation of the hot carrier degradation in power LDMOS transistors with customized thick oxide. Microelectron. Reliab. Andrea Natale Tallarico, Susanna Reggiani, Paolo Magnone, Giuseppe Croce, Riccardo Depetro, P. Gattari, Enrico Sangiorgi, Claudio Fiegna
2017	J	`jnl`	Optimum Design Rules for CMOS Hall Sensors. Sensors Marco Crescentini, Michele Biondi, Aldo Romani, Marco Tartagni, Enrico Sangiorgi
2013	J	`jnl`	Implementation of nanoscale double-gate CMOS circuits using compact advanced transport models. Microelectron. J. Muthupandian Cheralathan, Esteban Contreras, Joaquín Alvarado, Antonio Cerdeira, Giuseppe Iannaccone, Enrico Sangiorgi, Benjamín Iñíguez
2012	J	`jnl`	A methodology to account for the finger interruptions in solar cell performance. Microelectron. Reliab. Raffaele De Rose, Antonio Malomo, Paolo Magnone, Felice Crupi, Giorgio Cellere, Marco Martire, Diego Tonini, Enrico Sangiorgi
2007	—	`conf`	The Monte Carlo approach to transport modeling in deca-nanometer MOSFETs. ESSCIRC Enrico Sangiorgi, Pierpaolo Palestri, David Esseni, Claudio Fiegna, Luca Selmi
1993	J	`jnl`	A numerical method to compute isotropic band models from anisotropic semiconductor band structures. IEEE Trans. Comput. Aided Des. Integr. Circuits Syst. Antonio Abramo, Franco Venturi, Enrico Sangiorgi, Jack M. Higman, Bruno Riccò
1991	J	`jnl`	Monte Carlo simulations of high energy electrons and holes in Si-n-MOSFET's. IEEE Trans. Comput. Aided Des. Integr. Circuits Syst. Franco Venturi, Enrico Sangiorgi, Rossella Brunetti, Wolfgang Quade, Carlo Jacoboni, Bruno Riccò
1990	J	`jnl`	Latch-up in CMOS circuits: A review. Eur. Trans. Telecommun. Enrico Sangiorgi
1990	J	`jnl`	Latch-up testing in CMOS IC's. IEEE J. Solid State Circuits Roberto Menozzi, Massimo Lanzoni, Claudio Fiegna, Enrico Sangiorgi, Bruno Riccò
1989	J	`jnl`	A general purpose device simulator coupling Poisson and Monte Carlo transport with applications to deep submicron MOSFETs. IEEE Trans. Comput. Aided Des. Integr. Circuits Syst. Franco Venturi, R. Kent Smith, Enrico Sangiorgi, Mark R. Pinto, Bruno Riccò
1988	J	`jnl`	MOS IEEE Trans. Comput. Aided Des. Integr. Circuits Syst. Enrico Sangiorgi, Bruno Riccò, Franco Venturi
1985	J	`jnl`	Two-Dimensional Numerical Analysis of Latchup in a VLSI CMOS Technology. IEEE Trans. Comput. Aided Des. Integr. Circuits Syst. Enrico Sangiorgi, Mark R. Pinto, Stanley E. Swirhun, Robert W. Dutton