Elena Gnani

25 papers Journal 6Unranked 19
YearRankTypeTitle / Venue / Authors
2023 J jnl
TCAD Modeling of High-Field Electron Transport in Bulk Wurtzite GaN: The Full-Band SHE-BTE.
IEEE Access
Luigi Balestra, Franco Ercolano, Elena Gnani, Susanna Reggiani
2022 — conf
TCAD Investigation of Power-to-Failure Evaluation for Ultrafast Events in BJT-based ESD Protection Cells.
IRPS
Laura Zunarelli, Susanna Reggiani, Elena Gnani, Raj Sankaralingam, Mariano Dissegna, Gianluca Boselli
2019 — conf
On the electron mobility of strained InGaAs channel MOSFETs.
ESSDERC
Stefania Carapezzi, Susanna Reggiani, Elena Gnani, Antonio Gnudi
2018 — conf
3D TCAD modeling of NO2CNT FET sensors.
ESSDERC
Stefania Carapezzi, Sebastian Eberle, Susanna Reggiani, Elena Gnani, Cosmin Roman, Christofer Hierold, Antonio Gnudi
2018 J jnl
Electrical characterization of epoxy-based molding compounds for next generation HV ICs in presence of moisture.
Microelectron. Reliab.
Davide Cornigli, Susanna Reggiani, Antonio Gnudi, Elena Gnani, Giorgio Baccarani, Davide Fabiani, Dhanoop Varghese, Enis Tuncer, S. Krishnan, Luu Nguyen
2018 J jnl
TCAD study of DLC coatings for large-area high-power diodes.
Microelectron. Reliab.
Susanna Reggiani, Luigi Balestra, Antonio Gnudi, Elena Gnani, Giorgio Baccarani, J. Dobrzynska, J. Vobecký, C. Tosi
2016 — conf
A full-quantum simulation study of InGaAs NW MOSFETs including interface traps.
ESSDERC
Michele Visciarelli, Antonio Gnudi, Elena Gnani, Susanna Reggiani
2016 — conf
Performance study of strained III-V materials for ultra-thin body transistor applications.
ESSDERC
Martin Rau, Troels Markussen, Enrico Caruso, David Esseni, Elena Gnani, Antonio Gnudi, Petr A. Khomyakov, Mathieu Luisier, Patrik Osgnach, Pierpaolo Palestri, Susanna Reggiani, Andreas Schenk, Luca Selmi, Kurt Stokbro
2016 — conf
TCAD low-field mobility model for InGaAs UTB MOSFETs including quasi-ballistic corrections.
ESSDERC
Stefania Carapezzi, Enrico Caruso, Antonio Gnudi, Susanna Reggiani, Elena Gnani
2015 — conf
Theoretical analyses and modeling for nanoelectronics.
ESSCIRC
Giorgio Baccarani, Emanuele Baravelli, Elena Gnani, Antonio Gnudi, Susanna Reggiani
2015 — conf
Theoretical analyses and modeling for nanoelectronics.
ESSDERC
Giorgio Baccarani, Emanuele Baravelli, Elena Gnani, Antonio Gnudi, Susanna Reggiani
2014 — conf
A quasi 2D semianalytical model for the potential profile in hetero and homojunction tunnel FETs.
ESSDERC
Federica Villani, Elena Gnani, Antonio Gnudi, Susanna Reggiani, Giorgio Baccarani
2014 — conf
Impact of crystallographic orientation and impurity scattering in Graphene-Base Heterojunction Transistors for Terahertz Operation.
ESSDERC
Valerio Di Lecce, Roberto Grassi, Antonio Gnudi, Elena Gnani, Susanna Reggiani, Giorgio Baccarani
2014 — conf
TCAD analysis of HCS degradation in LDMOS devices under AC stress conditions.
ESSDERC
Federico Monti, Susanna Reggiani, Gaetano Barone, Elena Gnani, Antonio Gnudi, Giorgio Baccarani, Stefano Poli, Ming-Yeh Chuang, Weidong Tian, Dhanoop Varghese, Rick Wise
2014 — conf
TCAD modeling of encapsulation layer in high-voltage, high-temperature operation regime.
ESSDERC
Ilaria Imperiale, Susanna Reggiani, Elena Gnani, Antonio Gnudi, Giorgio Baccarani, Luu Nguyen, Marie Denison
2013 — conf
Boosting InAs TFET on-current above 1 mA/μm with no leakage penalty.
ESSDERC
Giovanni Betti Beneventi, Elena Gnani, Antonio Gnudi, Susanna Reggiani, Giorgio Baccarani
2013 — conf
Complementary n- and p-type TFETs on the same InAs/Al0.05Ga0.95Sb platform.
ESSDERC
Emanuele Baravelli, Elena Gnani, Roberto Grassi, Antonio Gnudi, Susanna Reggiani, Giorgio Baccarani
2013 — conf
DC and small-signal numerical simulation of graphene base transistor for terahertz operation.
ESSDERC
Valerio Di Lecce, Roberto Grassi, Antonio Gnudi, Elena Gnani, Susanna Reggiani, Giorgio Baccarani
2013 J jnl
Deterministic solution of the 1D Boltzmann transport equation: Application to the study of current transport in nanowire FETs.
Microelectron. J.
Elena Gnani, Antonio Gnudi, Susanna Reggiani, Giorgio Baccarani
2013 — conf
Gate stack optimization to minimize power consumption in super-lattice fets.
ESSDERC
Pasquale Maiorano, Elena Gnani, Antonio Gnudi, Susanna Reggiani, Giorgio Baccarani
2013 — conf
Modeling and characterization of hot-carrier stress degradation in power MOSFETs (invited).
ESSDERC
Susanna Reggiani, Elena Gnani, Antonio Gnudi, Giorgio Baccarani, Stefano Poli, Rick Wise, Ming-Yeh Chuang, Weidong Tian, Marie Denison
2012 — conf
Drain-conductance optimization in nanowire TFETs.
ESSDERC
Elena Gnani, Susanna Reggiani, Antonio Gnudi, Giorgio Baccarani
2012 — conf
TCAD degradation modeling for LDMOS transistors.
ESSDERC
Susanna Reggiani, Gaetano Barone, Elena Gnani, Antonio Gnudi, Stefano Poli, Ming-Yeh Chuang, Weidong Tian, Rick Wise
2002 J jnl
Automatic 2-D and 3-D simulation of parasitic structures insmart-power integrated circuits.
IEEE Trans. Comput. Aided Des. Integr. Circuits Syst.
Elena Gnani, Vincenzo Giudicissi, Radu Vissarion, Claudio Contiero, Massimo Rudan
2001 J jnl
Calculation of Transport Parameters of SiO
VLSI Design
Elena Gnani, Susanna Reggiani, Renato Colle, Massimo Rudan