Eldad Bahat-Treidel

11 papers Journal 7Unranked 4
YearRankTypeTitle / Venue / Authors
2023 — conf
Trapping in $\text{Al}_{2}\mathrm{O}_{3}/\text{GaN}$ MOScaps investigated by fast capacitive techniques.
IRPS
Manuel Fregolent, Alberto Marcuzzi, Carlo De Santi, Eldad Bahat-Treidel, Gaudenzio Meneghesso, Enrico Zanoni, Matteo Meneghini
2021 — conf
GaN-channel HEMTs with AlN buffer for high-voltage switching.
DRC
Oliver Hilt, Frank Brunner, Eldad Bahat-Treidel, Mihaela Wolf, Joachim Würfl
2020 — conf
The influence of the gate trench orientation to the crystal plane on the conduction properties of vertical GaN MISFETs for laser driving applications.
DRC
Eldad Bahat-Treidel, Oliver Hilt, H. Christopher, A. Klehr, A. Ginolas, A. Liero, Joachim Würfl
2016 J jnl
Normally-off GaN-HEMTs with p-type gate: Off-state degradation, forward gate stress and ESD failure.
Microelectron. Reliab.
Matteo Meneghini, Oliver Hilt, Clément Fleury, Riccardo Silvestri, Mattia Capriotti, Gottfried Strasser, Dionyz Pogany, Eldad Bahat-Treidel, Frank Brunner, A. Knauer, Joachim Würfl, Isabella Rossetto, Enrico Zanoni, Gaudenzio Meneghesso, Stefano Dalcanale
2016 J jnl
Temperature dependent dynamic on-state resistance in GaN-on-Si based normally-off HFETs.
Microelectron. Reliab.
Eldad Bahat-Treidel, Oliver Hilt, O. Bahat Treidel, Joachim Würfl
2015 — conf
E-mode AlGaN/GaN True-MOS, with high-k ZrO2 gate insulator.
ESSDERC
Mattia Capriotti, Clément Fleury, Ole Bethge, Matteo Rigato, Suzanne Lancaster, Dionyz Pogany, Gottfried Strasser, Eldad Bahat-Treidel, Oliver Hilt, Frank Brunner, Joachim Würfl
2014 J jnl
Effect of gate trench fabrication technology on reliability of AlGaN/GaN heterojunction field effect transistors.
Microelectron. Reliab.
Sergey A. Chevtchenko, Matthias Schulz, Eldad Bahat-Treidel, Wilfred John, Stephan Freyer, Paul Kurpas, Joachim Würfl
2012 J jnl
Single- and double-heterostructure GaN-HEMTs devices for power switching applications.
Microelectron. Reliab.
Alberto Zanandrea, Eldad Bahat-Treidel, Fabiana Rampazzo, Antonio Stocco, Matteo Meneghini, Enrico Zanoni, Oliver Hilt, Ponky Ivo, Joachim Würfl, Gaudenzio Meneghesso
2011 J jnl
Comparative study of AlGaN/GaN HEMTs robustness versus buffer design variations by applying Electroluminescence and electrical measurements.
Microelectron. Reliab.
Ponky Ivo, Arkadiusz Glowacki, Eldad Bahat-Treidel, Richard Lossy, Joachim Würfl, Christian Boit, Günther Tränkle
2011 J jnl
Reliability issues of GaN based high voltage power devices.
Microelectron. Reliab.
Joachim Würfl, Eldad Bahat-Treidel, Frank Brunner, E. Cho, Oliver Hilt, Ponky Ivo, A. Knauer, Paul Kurpas, Richard Lossy, Matthias Schulz, S. Singwald, Markus Weyers, Rimma Zhytnytska
2009 J jnl
Characterization of stress degradation effects and thermal properties of AlGaN/GaN HEMTs with photon emission spectral signatures.
Microelectron. Reliab.
Arkadiusz Glowacki, Piotr Laskowski, Christian Boit, Ponky Ivo, Eldad Bahat-Treidel, Reza Pazirandeh, Richard Lossy, Joachim Würfl, Günther Tränkle