Eddy Simoen

28 papers Journal 21Unranked 7
YearRankTypeTitle / Venue / Authors
2021 — conf
A Fast DCIV Technique for Characterizing the Generation and Repassivation of Interface Traps Under DC/ AC NBTI Stress/Recovery Condition in Si p-FinFETs.
IRPS
Longda Zhou, Zhaohao Zhang, Hong Yang, Zhigang Ji, Qianqian Liu, Qingzhu Zhang, Eddy Simoen, Huaxiang Yin, Jun Luo, Anyan Du, Chao Zhao, Wenwu Wang
2021 — conf
A defect characterization technique for the sidewall surface of Nano-ridge and Nanowire based Logic and RF technologies.
IRPS
Abhitosh Vais, Brent Hsu, Olga Syshchyk, Hao Yu, AliReza Alian, Yves Mols, Komal Vondkar Kodandarama, Bernardette Kunert, Niamh Waldron, Eddy Simoen, Nadine Collaert
2021 J jnl
Analysis of zero-temperature coefficient behavior on vertically stacked double nanosheet nMOS devices.
Microelectron. J.
Carlos H. S. Coelho, João Antonio Martino, Marcello Bellodi, Eddy Simoen, Anabela Veloso, Paula Ghedini Der Agopian
2021 — conf
Comparative Study on the Energy Distribution of Defects under HCD and NBTI in Short Channel p-FinFETs.
IRPS
Hao Chang, Longda Zhou, Hong Yang, Zhigang Ji, Qianqian Liu, Eddy Simoen, Huaxiang Yin, Wenwu Wang
2019 J jnl
Analytical modelling and device design optimisation of epitaxial layer-based III-V tunnel FET.
IET Circuits Devices Syst.
Prabhat Kumar Dubey, Brajesh Kumar Kaushik, Eddy Simoen
2019 — conf
Impact of Device Architecture and Gate Stack Processing on the Low-Frequency Noise of Silicon Nanowire Transistors.
ASICON
Eddy Simoen, Alberto Vinicius Oliveira, Anabela Veloso, Adrian Vaisman Chasin, Romain Ritzenthaler, Hans Mertens, Naoto Horiguchi, Cor Claeys
2014 J jnl
Investigation of Bulk and DTMOS triple-gate devices under 60 MeV proton irradiation.
Microelectron. Reliab.
Maria Glória Caño de Andrade, João Antonio Martino, Marc Aoulaiche, Nadine Collaert, Eddy Simoen, Cor Claeys
2013 J jnl
Drain currents and their excess noise in triple gate bulk p-channel FinFETs of different geometry.
Microelectron. Reliab.
N. Lukyanchikova, N. Garbar, Valeriya Kudina, A. Smolanka, Eddy Simoen, Cor Claeys
2013 — conf
Impact of Al2O3 position on performances and reliability in high-k metal gated DRAM periphery transistors.
ESSDERC
Marc Aoulaiche, Eddy Simoen, Romain Ritzenthaler, Tom Schram, Hiroaki Arimura, Moonju Cho, Thomas Kauerauf, Guido Groeseneken, Naoto Horiguchi, Aaron Thean, Antonio Federico, Felice Crupi, Alessio Spessot, Christian Caillat, Pierre Fazan, Hyuokju Na, Y. Son, K. B. Noh
2012 J jnl
An analytic method to compute the stress dependence on the dimensions and its influence in the characteristics of triple gate devices.
Microelectron. Reliab.
Renan Trevisoli Doria, João Antonio Martino, Eddy Simoen, Cor Claeys, Marcelo Antonio Pavanello
2012 J jnl
Characterization and SPICE modeling of the CHC related time-dependent variability in strained and unstrained pMOSFETs.
Microelectron. Reliab.
Nuria Ayala, Javier Martín-Martínez, Rosana Rodríguez, M. B. González, Montserrat Nafría, Xavier Aymerich, Eddy Simoen
2012 J jnl
High-energy neutrons effect on strained and non-strained SOI MuGFETs and planar MOSFETs.
Microelectron. Reliab.
Valeria Kilchytska, Joaquín Alvarado, S. Put, Nadine Collaert, Eddy Simoen, Cor Claeys, Otilia Militaru, Guy Berger, Denis Flandre
2012 — conf
Low-frequency noise assessment of the transport mechanisms in SiGe channel bulk FinFETs.
ESSDERC
Tommaso Romeo, Luigi Pantisano, Eddy Simoen, Raymond Krom, Mitsuhiro Togo, N. Horiguchi, Jérôme Mitard, Aaron Thean, Guido Groeseneken, Cor Claeys, Felice Crupi
2012 — conf
On the correlation between the retention time of FBRAM and the low-frequency noise of UTBOX SOI nMOSFETs.
ESSDERC
Eddy Simoen, Marc Aoulaiche, Anabela Veloso, M. Jurczak, Cor Claeys, L. Mendes Almeida, Maria Glória Caño de Andrade, A. Luque Rodriguez, J. A. Jimenez Tejada, Christian Caillat, Pierre Fazan
2010 J jnl
SPICE modelling of hot-carrier degradation in Si
Microelectron. Reliab.
Javier Martín-Martínez, Esteve Amat, M. B. González, P. Verheyen, Rosana Rodríguez, Montserrat Nafría, Xavier Aymerich, Eddy Simoen
2007 J jnl
High-temperature performance of state-of-the-art triple-gate transistors.
Microelectron. Reliab.
Kerem Akarvardar, Abdelkarim Mercha, Eddy Simoen, Vaidyanathan Subramanian, Cor Claeys, Pierre Gentil, Sorin Cristoloveanu
2007 J jnl
Interfacial layer quality effects on low-frequency noise (1/f) in p-MOSFETs with advanced gate stacks.
Microelectron. Reliab.
Paolo Srinivasan, Felice Crupi, Eddy Simoen, Paolo Magnone, Calogero Pace, Durga Misra, Cor Claeys
2007 J jnl
Study of the linear kink effect in PD SOI nMOSFETs.
Microelectron. J.
Paula Ghedini Der Agopian, João Antonio Martino, Eddy Simoen, Cor Claeys
2006 J jnl
Hot-carrier-induced degradation of drain current hysteresis and transients in thin gate oxide floating body partially depleted SOI nMOSFETs.
Microelectron. Reliab.
Joan Marc Rafí, Eddy Simoen, Kiyoteru Hayama, Abdelkarim Mercha, Francesca Campabadal, Hidenori Ohyama, Cor Claeys
2006 J jnl
Impact of the twin-gate structure on the linear kink effect in PD SOI nMOSFETS.
Microelectron. J.
Paula Ghedini Der Agopian, João Antonio Martino, Eddy Simoen, Cor Claeys
2006 J jnl
Impact on the back gate degradation in partially depleted SOI n-MOSFETs by 2-MeV electron irradiation.
Microelectron. Reliab.
Kiyoteru Hayama, Kenichiro Takakura, K. Shigaki, Hidenori Ohyama, Joan Marc Rafí, Abdelkarim Mercha, Eddy Simoen, Cor Claeys
2006 J jnl
The temperature mobility degradation influence on the zero temperature coefficient of partially and fully depleted SOI MOSFETs.
Microelectron. J.
L. M. Camillo, João Antonio Martino, Eddy Simoen, Cor Claeys
2005 J jnl
Radiation source dependence of performance degradation in thin gate oxide fully-depleted SOI n-MOSFETs.
Microelectron. Reliab.
Kiyoteru Hayama, Kenichiro Takakura, Hidenori Ohyama, S. Kuboyama, S. Matsuda, Joan Marc Rafí, Abdelkarim Mercha, Eddy Simoen, Cor Claeys
2004 J jnl
Degradation of electrical performance and floating body effect in ultra thin gate oxide FD-SOI n-MOSFETs by 7.5-MeV proton irradiation.
Microelectron. Reliab.
Kiyoteru Hayama, Kenichiro Takakura, Hidenori Ohyama, Abdelkarim Mercha, Eddy Simoen, Cor Claeys, Joan Marc Rafí, Michael Kokkoris
2001 J jnl
Degradation and recovery of AlGaAs/GaAs p-HEMT irradiated by high-energy particle.
Microelectron. Reliab.
Hidenori Ohyama, Eddy Simoen, S. Kuroda, Cor Claeys, Y. Takami, T. Hakata, K. Kobayashi, M. Nakabayashi, Hiromi Sunaga
2001 J jnl
Impact of gate oxide nitridation process on 1/f noise in 0.18 mum CMOS.
Microelectron. Reliab.
M. Da Rold, Eddy Simoen, Sofie Mertens, Marc Schaekers, G. Badenes, Stefaan Decoutere
2001 J jnl
Radiation damages of polycrystalline silicon films and npn Si transistors by high-energy particle irradiation.
Microelectron. Reliab.
Hidenori Ohyama, M. Nakabayashi, Eddy Simoen, Cor Claeys, T. Tanaka, T. Hirao, S. Onada, K. Kobayashi
2001 J jnl
Reliability of polycrystalline silicon thin film resistors.
Microelectron. Reliab.
M. Nakabayashi, Hidenori Ohyama, Eddy Simoen, M. Ikegami, Cor Claeys, K. Kobayashi, M. Yoneoka, K. Miyahara