E. Vincent

20 papers Journal 18Unranked 2
YearRankTypeTitle / Venue / Authors
2021 — conf
BTI Arbitrary Stress Patterns Characterization & Machine-Learning optimized CET Maps Simulations.
IRPS
Louis Gerrer, Jacques Cluzel, Fred Gaillard, Xavier Garros, Xavier Federspiel, Florian Cacho, David Roy, E. Vincent
2018 J jnl
Characterization and modeling of dynamic variability induced by BTI in nano-scaled transistors.
Microelectron. Reliab.
Xavier Garros, Antoine Laurent, Alexandre Subirats, X. Federspiel, E. Vincent, Gilles Reimbold
2018 — conf
Performance & reliability of 3D architectures (πfet, Finfet, Ωfet).
IRPS
Antoine Laurent, Xavier Garros, Sylvain Barraud, J. Pelloux-Prayer, Mikaël Cassé, Fred Gaillard, X. Federspiel, David Roy, E. Vincent, Gérard Ghibaudo
2010 J jnl
Unified soft breakdown MOSFETs compact model: From experiments to circuit simulation.
Microelectron. Reliab.
L. Gerrer, M. Rafik, G. Ribes, Gérard Ghibaudo, E. Vincent
2007 J jnl
Impact of strained-channel n-MOSFETs with a SiGe virtual substrate on dielectric interface quality evaluated by low frequency noise measurements.
Microelectron. Reliab.
G. Néau, Frédéric Martinez, M. Valenza, J. C. Vildeuil, E. Vincent, Frédéric Boeuf, F. Payet, K. Rochereau
2006 J jnl
Designing in reliability in advanced CMOS technologies.
Microelectron. Reliab.
C. R. Parthasarathy, Mickael Denais, Vincent Huard, G. Ribes, David Roy, Chloe Guérin, F. Perrier, E. Vincent, Alain Bravaix
2005 J jnl
A thorough investigation of MOSFETs NBTI degradation.
Microelectron. Reliab.
Vincent Huard, Mickael Denais, F. Perrier, Nathalie Revil, C. R. Parthasarathy, Alain Bravaix, E. Vincent
2005 J jnl
Impacts of the recovery phenomena on the worst-case of damage in DC/AC stressed ultra-thin NO gate-oxide MOSFETs.
Microelectron. Reliab.
Alain Bravaix, Didier Goguenheim, Mickael Denais, Vincent Huard, C. R. Parthasarathy, F. Perrier, Nathalie Revil, E. Vincent
2004 J jnl
Hole injection enhanced hot-carrier degradation in PMOSFETs used for systems on chip applications with 6.5-2 nm thick gate-oxides.
Microelectron. Reliab.
Alain Bravaix, Didier Goguenheim, Nathalie Revil, E. Vincent
2003 J jnl
Carrier injection efficiency for the reliability study of 3.5-1.2 nm thick gate-oxide CMOS technologies.
Microelectron. Reliab.
Alain Bravaix, C. Trapes, Didier Goguenheim, Nathalie Revil, E. Vincent
2003 J jnl
Guest Editorial.
Microelectron. Reliab.
Gérard Ghibaudo, E. Vincent
2003 J jnl
MIM capacitance variation under electrical stress.
Microelectron. Reliab.
C. Besset, S. Bruyère, S. Blonkowski, S. Crémer, E. Vincent
2003 J jnl
On the role of holes in oxide breakdown mechanism in inverted nMOSFETs.
Microelectron. Reliab.
Frederic Monsieur, E. Vincent, Vincent Huard, S. Bruyère, David Roy, Thomas Skotnicki, G. Pananakakis, Gérard Ghibaudo
2002 J jnl
Gate oxide Reliability assessment optimization.
Microelectron. Reliab.
Frederic Monsieur, E. Vincent, David Roy, S. Bruyère, G. Pananakakis, Gérard Ghibaudo
2002 J jnl
Series resistance and oxide thickness spread influence on Weibull breakdown distribution: New experimental correction for reliability projection improvement.
Microelectron. Reliab.
David Roy, S. Bruyère, E. Vincent, Frederic Monsieur
2001 J jnl
Body effect induced wear-out acceleration in ultra-thin oxides.
Microelectron. Reliab.
Sylvie Bruyère, David Roy, E. Robilliart, E. Vincent, Gérard Ghibaudo
2001 J jnl
Determination of Dielectric Breakdown Weibull Distribution Parameters Confidence Bounds for Accurate Ultrathin Oxide Reliability Predictions.
Microelectron. Reliab.
Frederic Monsieur, E. Vincent, David Roy, S. Bruyère, G. Pananakakis, Gérard Ghibaudo
2001 J jnl
Failures in ultrathin oxides: Stored energy or carrier energy driven?
Microelectron. Reliab.
S. Bruyère, Frederic Monsieur, David Roy, E. Vincent, Gérard Ghibaudo
2001 J jnl
Injection Mechanisms and Lifetime Prediction with the Substrate Voltage in 0.15mum Channel-Length N-MOSFETs.
Microelectron. Reliab.
Alain Bravaix, Didier Goguenheim, Nathalie Revil, E. Vincent
2001 J jnl
Wear-out, breakdown occurrence and failure detection in 18-25 Å ultrathin oxides.
Microelectron. Reliab.
Frederic Monsieur, E. Vincent, G. Pananakakis, Gérard Ghibaudo