Didier Goguenheim

12 papers Journal 11Unranked 1
YearRankTypeTitle / Venue / Authors
2014 — conf
Distance measurement using narrowband ZigBee devices.
WOCC
Florian Barrau, Bruno Paille, Edith Kussener, Didier Goguenheim
2009 J jnl
Influence of various process steps on the reliability of PMOSFETs submitted to negative bias temperature instabilities.
Microelectron. Reliab.
Christelle Bénard, Gaëtan Math, Pascal Fornara, Jean-Luc Ogier, Didier Goguenheim
2008 J jnl
Assessment of temperature and voltage accelerating factors for 2.3-3.2 nm SiO
Microelectron. Reliab.
D. Pic, Didier Goguenheim, Jean-Luc Ogier
2008 J jnl
Dynamic stress method for accurate NVM oxide robustness evaluation for automotive applications.
Microelectron. Reliab.
D. Pic, Arnaud Régnier, V. Pean, Jean-Luc Ogier, Didier Goguenheim
2007 J jnl
A comprehensive study of stress induced leakage current using a floating gate structure for direct applications in EEPROM memories.
Microelectron. Reliab.
D. Pic, Didier Goguenheim, Jean-Luc Ogier
2007 J jnl
Oxide reliability below 3 nm for advanced CMOS: Issues, characterization, and solutions.
Microelectron. Reliab.
Didier Goguenheim, D. Pic, Jean-Luc Ogier
2005 J jnl
Experimental extraction of degradation parameters after constant voltage stress and substrate hot electron injection on ultrathin oxides.
Microelectron. Reliab.
C. Trapes, Didier Goguenheim, Alain Bravaix
2005 J jnl
Impact of wafer charging on hot carrier reliability and optimization of latent damage detection methodology in advanced CMOS technologies.
Microelectron. Reliab.
Didier Goguenheim, Alain Bravaix, S. Gomri, J. M. Moragues, C. Monserie, N. Legrand, Philippe Boivin
2005 J jnl
Impacts of the recovery phenomena on the worst-case of damage in DC/AC stressed ultra-thin NO gate-oxide MOSFETs.
Microelectron. Reliab.
Alain Bravaix, Didier Goguenheim, Mickael Denais, Vincent Huard, C. R. Parthasarathy, F. Perrier, Nathalie Revil, E. Vincent
2004 J jnl
Hole injection enhanced hot-carrier degradation in PMOSFETs used for systems on chip applications with 6.5-2 nm thick gate-oxides.
Microelectron. Reliab.
Alain Bravaix, Didier Goguenheim, Nathalie Revil, E. Vincent
2003 J jnl
Carrier injection efficiency for the reliability study of 3.5-1.2 nm thick gate-oxide CMOS technologies.
Microelectron. Reliab.
Alain Bravaix, C. Trapes, Didier Goguenheim, Nathalie Revil, E. Vincent
2001 J jnl
Injection Mechanisms and Lifetime Prediction with the Substrate Voltage in 0.15mum Channel-Length N-MOSFETs.
Microelectron. Reliab.
Alain Bravaix, Didier Goguenheim, Nathalie Revil, E. Vincent