Dennis Lin - RankMe

13 papers A 1Journal 2Unranked 10

Year	Rank	Type	Title / Venue / Authors
2023	—	`conf`	Impact of gate stack processing on the hysteresis of 300 mm integrated WS2 FETs. IRPS L. Panarella, Ben Kaczer, Quentin Smets, Devin Verreck, Tom Schram, Daire Cott, Dennis Lin, Stanislav Tyaginov, Inge Asselberghs, Cesar J. Lockhart de la Rosa, Gouri Sankar Kar, Valeri Afanas'ev
2023	—	`conf`	Integration of epitaxial monolayer MX₂ channels on 300mm wafers via Collective-Die-To-Wafer (CoD2W) transfer. VLSI Technology and Circuits Souvik Ghosh, Quentin Smets, S. Banerjee, Tom Schram, Koen Kennes, R. Verheyen, P. Kumar, M.-E. Boulon, Benjamin Groven, H. M. Silva, Shreya Kundu, Daire Cott, Dennis Lin, P. Favia, T. Nuytten, A. Phommahaxay, Inge Asselberghs, C. De La Rosa, Gouri Sankar Kar, Steven Brems
2021	—	`conf`	On MX2-based metal-oxide-semiconductor device capacitance-voltage characteristics and dual-gate operation. DRC Dennis Lin, Xiangyu Wu, Vivek Mootheri, Daire Cott, Benjamin Groven, Pierre Morin, Inge Asselberghs, Iuliana P. Radu
2019	—	`conf`	Tunnel FETs using Phosphorene/ReS2 heterostructures. DRC Yashwanth Balaji, Quentin Smets, Dennis Lin, Inge Asselberghs, Iuliana P. Radu, Guido Groeseneken
2018	—	`conf`	Doping-free complementary inverter enabled by 2D WSe2 electrostatically-doped reconfigurable transistors. DRC Giovanni V. Resta, Yashwanth Balaji, Dennis Lin, Iuliana P. Radu, Francky Catthoor, Pierre-Emmanuel Gaillardon, Giovanni De Micheli
2018	A	`conf`	Towards high-performance polarity-controllable FETs with 2D materials. DATE Giovanni V. Resta, Jorge Romero Gonzalez, Yashwanth Balaji, Tarun Agarwal, Dennis Lin, Francky Catthoor, Iuliana P. Radu, Giovanni De Micheli, Pierre-Emmanuel Gaillardon
2017	—	`conf`	Tunneling transistors based on MoS2/MoTe2 Van der Waals heterostructures. ESSDERC Yashwanth Balaji, Quentin Smets, Cesar J. Lockhart de la Rosa, Anh Khoa Augustin Lu, Daniele Chiappe, Tarun Agarwal, Dennis Lin, Cedric Huyghebaert, Iuliana P. Radu, Dan Mocuta, Guido Groeseneken
2017	—	`conf`	WS2 transistors on 300 mm wafers with BEOL compatibility. ESSDERC Tom Schram, Quentin Smets, Benjamin Groven, M. H. Heyne, E. Kunnen, A. Thiam, Katia Devriendt, Annelies Delabie, Dennis Lin, M. Lux, Daniele Chiappe, Inge Asselberghs, S. Brus, Cedric Huyghebaert, S. Sayan, A. Juncker, Matty Caymax, Iuliana P. Radu
2016	—	`conf`	Beyond-Si materials and devices for more Moore and more than Moore applications. ICICDT Nadine Collaert, AliReza Alian, Hiroaki Arimura, Geert Boccardi, Geert Eneman, Jacopo Franco, Tsvetan Ivanov, Dennis Lin, Jérôme Mitard, S. Ramesh, R. Rooyackers, Marc Schaekers, A. Sibaya-Hernandez, S. Sioncke, Quentin Smets, Abhitosh Vais, A. Vandooren, Anabela Veloso, Anne S. Verhulst, Devin Verreck, Niamh Waldron, Amey Walke, Liesbeth Witters, H. Yu, X. Zhou, Aaron Voon-Yew Thean
2015	J	`jnl`	Construction of Orthogonal Nearly Latin Hypercubes. Qual. Reliab. Eng. Int. David M. Steinberg, Dennis Lin
2015	—	`conf`	The relationship between border traps characterized by AC admittance and BTI in III-V MOS devices. IRPS Abhitosh Vais, Koen Martens, Jacopo Franco, Dennis Lin, AliReza Alian, Philippe Roussel, S. Sioncke, Nadine Collaert, Aaron Thean, Marc M. Heyns, Guido Groeseneken, Kristin De Meyer
2014	J	`jnl`	Determination of energy and spatial distribution of oxide border traps in In Microelectron. Reliab. Chunmeng Dou, Dennis Lin, Abhitosh Vais, Tsvetan Ivanov, Han-Ping Chen, Koen Martens, Kuniyuki Kakushima, Hiroshi Iwai, Yuan Taur, Aaron Thean, Guido Groeseneken
2002	—	`conf`	Modularized low temperature LNO/PZT/LNO ferroelectric capacitor-over-interconnect (COI) FeRAM for advanced SOC (ASOC) application. CICC S. L. Lung, Dennis Lin, S. S. Chen, Gary Weng, C. L. Liu, S. C. Lai, C. W. Tsai, T. B. Wu, Rich Liu