Dawei Bi

24 papers Journal 24
YearRankTypeTitle / Venue / Authors
2026 J jnl
A 40-nm Embedded Flash With Highly Reliable Bitline Transmission and Low-Voltage Current Sense Amplifier.
IEEE Trans. Very Large Scale Integr. Syst.
Tao Xu, Guoji Qiu, Zhiyuan Hu, Zhengxuan Zhang, Dawei Bi
2025 J jnl
A 0.75
IEICE Electron. Express
Zhengliang Zhao, Lili Lang, Dawei Bi, Yemin Dong
2025 J jnl
A Novel High-Speed Ultralow Power Double-Node-Upsets Tolerant Automotive Latch Design.
Int. J. Circuit Theory Appl.
Guoji Qiu, Dawei Bi, Zhiyuan Hu, Zhengxuan Zhang
2025 J jnl
A Wide-Range Voltage and High-Speed Progressive Level Shifter With Charge Pump for Embedded Flash Memory.
Int. J. Circuit Theory Appl.
Tao Xu, Guoji Qiu, Zhiyuan Hu, Zhengxuan Zhang, Dawei Bi
2025 J jnl
A programmable high efficiency charge pump system for embedded flash memory with improved current driving capability.
Microelectron. J.
Tao Xu, Yuqiao Xie, Guoji Qiu, Zhiyuan Hu, Zhengxuan Zhang, Dawei Bi
2025 J jnl
High-precision single-event transient hardened comparator with the sensitive node transient detection feedback latch technique.
Int. J. Circuit Theory Appl.
Yuqiao Xie, Tao Xu, Zhongyang Liu, Guoji Qiu, Dawei Bi, Zhiyuan Hu, Zhengxuan Zhang, Shichang Zou
2024 J jnl
An ultra low-power double-node-upsets hardened latch design.
Int. J. Circuit Theory Appl.
Zhuo Chen, Yuqiao Xie, Jingfeng Liang, Dawei Bi, Zhiyuan Hu, Zhengxuan Zhang
2023 J jnl
A highly stable and low-cost 12T radiation hardened SRAM cell design for aerospace application.
Int. J. Circuit Theory Appl.
Zhongyang Liu, Yuqiao Xie, Tao Xu, Qing Liu, Dawei Bi, Zhiyuan Hu, Shichang Zou, Zhengxuan Zhang
2023 J jnl
A novel high-precision single-event transient hardened voltage comparator design.
Int. J. Circuit Theory Appl.
Yuqiao Xie, Zhongyang Liu, Tao Xu, Dawei Bi, Zhiyuan Hu, Zhengxuan Zhang, Shichang Zou
2023 J jnl
An energy-efficient level shifter based on a differential cascade voltage switch structure.
Int. J. Circuit Theory Appl.
Haineng Zhang, Zhongyang Liu, Dawei Bi, Zhengxuan Zhang, Zhiyi Xiao, Ruofan Dai
2020 J jnl
Substrate effect on radiation-induced charge trapping in buried oxide for partially-depleted SOI NMOSFET.
IEICE Electron. Express
Huilong Zhu, Dawei Bi, Xin Xie, Zhiyuan Hu, Zhengxuan Zhang, Shichang Zou
2019 J jnl
Radiation-enhanced channel length modulation induced by trapped charges in buried oxide layer.
IEICE Electron. Express
Xin Xie, Huilong Zhu, Mengying Zhang, Dawei Bi, Zhiyuan Hu, Zhengxuan Zhang, Shichang Zou
2017 J jnl
Degradation induced by TID radiation and hot-carrier stress in 130-nm short channel PDSOI NMOSFETs.
Microelectron. Reliab.
Lihua Dai, Xiaonian Liu, Mengying Zhang, Leqing Zhang, Zhiyuan Hu, Dawei Bi, Zhengxuan Zhang, Shichang Zou
2016 J jnl
Bias dependence of TID induced single transistor latch for 0.13 μm partially depleted SOI input/output NMOSFETs.
Microelectron. Reliab.
Shuang Fan, Bingxu Ning, Zhiyuan Hu, Zhengxuan Zhang, Dawei Bi, Chao Peng, Lei Song, Lihua Dai
2016 J jnl
Hardening silicon-on-insulator nMOSFETs by multiple-step Si
Microelectron. Reliab.
Huixiang Huang, Yanyan Huang, Jiachun Zheng, Sufen Wei, Kai Tang, Dawei Bi, Zhengxuan Zhang
2014 J jnl
Investigation of the total dose response of partially depleted SOI nMOSFETs using TCAD simulation and experiment.
Microelectron. J.
Huixiang Huang, Dawei Bi, Zhengxuan Zhang
2014 J jnl
Total ionizing dose effect in 0.2 μm PDSOI NMOSFETs with shallow trench isolation.
Microelectron. Reliab.
Chao Peng, Zhiyuan Hu, Zhengxuan Zhang, Huixiang Huang, Bingxu Ning, Dawei Bi
2013 J jnl
Bias dependence of TID radiation responses of 0.13 μm partially depleted SOI NMOSFETs.
Microelectron. Reliab.
Bingxu Ning, Dawei Bi, Huixiang Huang, Zhengxuan Zhang, Zhiyuan Hu, Ming Chen, Shichang Zou
2013 J jnl
Comprehensive study on the TID effects of 0.13 μm partially depleted SOI NMOSFETs.
Microelectron. J.
Bingxu Ning, Dawei Bi, Huixiang Huang, Zhengxuan Zhang, Ming Chen, Shichang Zou
2012 J jnl
Radiation-induced shallow trench isolation leakage in 180-nm flash memory technology.
Microelectron. Reliab.
Bingxu Ning, Zhengxuan Zhang, Zhangli Liu, Zhiyuan Hu, Ming Chen, Dawei Bi, Shichang Zou
2011 J jnl
Comparison of TID response in core, input/output and high voltage transistors for flash memory.
Microelectron. Reliab.
Zhangli Liu, Zhiyuan Hu, Zhengxuan Zhang, Hua Shao, Ming Chen, Dawei Bi, Bingxu Ning, Shichang Zou
2011 J jnl
Impact of within-wafer process variability on radiation response.
Microelectron. J.
Zhiyuan Hu, Zhangli Liu, Hua Shao, Zhengxuan Zhang, Bingxu Ning, Ming Chen, Dawei Bi, Shichang Zou
2011 J jnl
The impact of total ionizing radiation on body effect.
Microelectron. J.
Bingxu Ning, Zhiyuan Hu, Zhengxuan Zhang, Zhangli Liu, Ming Chen, Dawei Bi, Shichang Zou
2011 J jnl
Total ionizing dose effects in elementary devices for 180-nm flash technologies.
Microelectron. Reliab.
Zhiyuan Hu, Zhangli Liu, Hua Shao, Zhengxuan Zhang, Bingxu Ning, Ming Chen, Dawei Bi, Shichang Zou