Davide Bisi

12 papers Journal 5Unranked 7
YearRankTypeTitle / Venue / Authors
2025 — conf
3 Factor Accelerated Lifetime Testing in Lateral GaN Power HEMTs: A Tutorial.
IRPS
S. Wienecke, R. Barr, W. Cruse, A. Wong, L. Shen, P. Smith, K. Shono, R. Lal, G. Gupta, Davide Bisi, C. Neufeld
2024 — conf
Deep Level Effects in N-Polar AlGaN/GaN High Electron Mobility Transistors: Toward Zero Dispersion Effects.
IRPS
Marco Saro, Francesco de Pieri, Andrea Carlotto, Mirko Fornasier, Fabiana Rampazzo, Carlo De Santi, Gaudenzio Meneghesso, Matteo Meneghini, Enrico Zanoni, Davide Bisi, Matthew Guidry, Stacia Keller, Umesh K. Mishra
2022 — conf
Short-Circuit Capability with GaN HEMTs : Invited.
IRPS
Davide Bisi, Bill Cruse, Philip Zuk, Primit Parikh, Umesh K. Mishra, Tsutomu Hosoda, Masamichi Kamiyama, Masahito Kanamura
2016 J jnl
Trapping and reliability issues in GaN-based MIS HEMTs with partially recessed gate.
Microelectron. Reliab.
Gaudenzio Meneghesso, Matteo Meneghini, Davide Bisi, Isabella Rossetto, Tian-Li Wu, Marleen Van Hove, Denis Marcon, Steve Stoffels, Stefaan Decoutere, Enrico Zanoni
2015 J jnl
Effects of buffer compensation strategies on the electrical performance and RF reliability of AlGaN/GaN HEMTs.
Microelectron. Reliab.
Davide Bisi, Antonio Stocco, Isabella Rossetto, Matteo Meneghini, Fabiana Rampazzo, Alessandro Chini, Fabio Soci, Alessio Pantellini, Claudio Lanzieri, Piero Gamarra, Cedric Lacam, M. Tordjman, Marie-Antoinette di Forte-Poisson, Davide De Salvador, Marco Bazzan, Gaudenzio Meneghesso, Enrico Zanoni
2015 — conf
Evidence for temperature-dependent buffer-induced trapping in GaN-on-silicon power transistors.
IRPS
Matteo Meneghini, Riccardo Silvestri, Stefano Dalcanale, Davide Bisi, Enrico Zanoni, Gaudenzio Meneghesso, Piet Vanmeerbeek, Abhishek Banerjee, Peter Moens
2015 J jnl
Impact of gate insulator on the dc and dynamic performance of AlGaN/GaN MIS-HEMTs.
Microelectron. Reliab.
Isabella Rossetto, Matteo Meneghini, Davide Bisi, Alessandro Barbato, Marleen Van Hove, Denis Marcon, Tian-Li Wu, Stefaan Decoutere, Gaudenzio Meneghesso, Enrico Zanoni
2014 — conf
Breakdown investigation in GaN-based MIS-HEMT devices.
ESSDERC
Fabio Alessio Marino, Davide Bisi, Matteo Meneghini, Giovanni Verzellesi, Enrico Zanoni, Marleen Van Hove, Shuzhen You, Stefaan Decoutere, Denis Marcon, Steve Stoffels, Nicolo Ronchi, Gaudenzio Meneghesso
2014 — conf
Characterization of high-voltage charge-trapping effects in GaN-based power HEMTs.
ESSDERC
Davide Bisi, Antonio Stocco, Matteo Meneghini, Fabiana Rampazzo, Andrea Cester, Gaudenzio Meneghesso, Enrico Zanoni
2014 J jnl
Proton induced trapping effect on space compatible GaN HEMTs.
Microelectron. Reliab.
Antonio Stocco, Simone Gerardin, Davide Bisi, Stefano Dalcanale, Fabiana Rampazzo, Matteo Meneghini, Gaudenzio Meneghesso, Jan Grünenpütt, Benoit Lambert, Hervé Blanck, Enrico Zanoni
2013 — conf
Influence of fluorine-based dry etching on electrical parameters of AlGaN/GaN-on-Si High Electron Mobility Transistors.
ESSDERC
Davide Bisi, Matteo Meneghini, Antonio Stocco, Giulia Cibin, Alessio Pantellini, Antonio Nanni, Claudio Lanzieri, Enrico Zanoni, Gaudenzio Meneghesso
2012 J jnl
Field plate related reliability improvements in GaN-on-Si HEMTs.
Microelectron. Reliab.
Alessandro Chini, Fabio Soci, Fausto Fantini, Antonio Nanni, Alessio Pantellini, Claudio Lanzieri, Davide Bisi, Gaudenzio Meneghesso, Enrico Zanoni