David Turgis

12 papers A 1Journal 2Unranked 9
YearRankTypeTitle / Venue / Authors
2021 — conf
Improving Ge-rich GST ePCM reliability through BEOL engineering.
ESSDERC
Andrea Redaelli, Anna Gandolfo, Giulia Samanni, Enrico Gomiero, Elisa Petroni, Luca Scotti, Andrea Lippiello, Paolo Mattavelli, J. Jasse, D. Codegoni, A. Serafini, Rossella Ranica, Christian Boccaccio, Jury Sandrini, R. Berthelon, J. C. Grenier, Olivier Weber, David Turgis, A. Valery, S. Del Medico, V. Caubet, J. P. Reynard, Didier Dutartre, L. Favennec, Antonino Conte, Fabio Disegni, M. De Tomasi, A. Ventre, Matteo Baldo, Daniele Ielmini, Alfonso Maurelli, P. Ferreira, Franck Arnaud, F. Piazza, Paolo Cappelletti, Roberto Annunziata, R. Gonella
2018 — conf
Energy-Efficient 4T SRAM Bitcell with 2T Read-Port for Ultra-Low-Voltage Operations in 28 nm 3D Monolithic CoolCubeTM Technology.
NANOARCH
Reda Boumchedda, Jean-Philippe Noel, Bastien Giraud, Adam Makosiej, Marco Antonio Rios, Eduardo Esmanhotto, Emilien Bourde-Cicé, Mathis Bellet, David Turgis, Edith Beigné
2017 J jnl
A 32 kb 0.35-1.2 V, 50 MHz-2.5 GHz Bit-Interleaved SRAM With 8 T SRAM Cell and Data Dependent Write Assist in 28-nm UTBB-FDSOI CMOS.
IEEE Trans. Circuits Syst. I Regul. Pap.
Anuj Grover, G. S. Visweswaran, Chittoor R. Parthasarathy, Mohammad Daud, David Turgis, Bastien Giraud, Jean-Philippe Noel, Ivan Miro Panades, Guillaume Moritz, Edith Beigné, Philippe Flatresse, Promod Kumar, Shamsi Azmi
2017 J jnl
High-Density 4T SRAM Bitcell in 14-nm 3-D CoolCube Technology Exploiting Assist Techniques.
IEEE Trans. Very Large Scale Integr. Syst.
Reda Boumchedda, Jean-Philippe Noel, Bastien Giraud, Kaya Can Akyel, Melanie Brocard, David Turgis, Edith Beigné
2016 — conf
28nm FDSOI technology sub-0.6V SRAM Vmin assessment for ultra low voltage applications.
VLSI Circuits
Rossella Ranica, Nicolas Planes, Vincent Huard, Olivier Weber, Daniel Noblet, Damien Croain, Fabien Giner, Sylvie Naudet, P. Mergault, S. Ibars, A. Villaret, Maryline Parra, Sébastien Haendler, M. Quoirin, Florian Cacho, C. Julien, F. Terrier, Lorenzo Ciampolini, David Turgis, Christophe Lecocq, Franck Arnaud
2016 A conf
Efficient yield estimation through generalized importance sampling with application to NBL-assisted SRAM bitcells.
ICCAD
Lorenzo Ciampolini, Jean-Christophe Lafont, Faress Tissafi Drissi, Jean-Paul Morin, David Turgis, Xavier Jonsson, Cyril Desclèves, Joseph Nguyen
2016 — conf
RAPIDO Testing and Modeling of Assisted Write and Read Operations for SRAMs.
NATW
Joseph Nguyen, David Turgis, David Bonciani, Brice Lhomme, Yann Carminati, Olivier Callen, Guillaume Guirleo, Lorenzo Ciampolini, Gérard Ghibaudo
2015 — conf
Low Standby Power Capacitively Coupled Sense Amplifier for wide voltage range operation of dual rail SRAMs.
ICICDT
Anuj Grover, Promod Kumar, Mohammad Daud, G. S. Visweswaran, Chittoor R. Parthasarathy, Jean-Philippe Noel, David Turgis, Bastien Giraud, Guillaume Moritz
2014 — conf
27.1 A 460MHz at 397mV, 2.6GHz at 1.3V, 32b VLIW DSP, embedding FMAX tracking.
ISSCC
Robin Wilson, Edith Beigné, Philippe Flatresse, Alexandre Valentian, Fady Abouzeid, Thomas Benoist, Christian Bernard, Sebastien Bernard, Olivier Billoint, Sylvain Clerc, Bastien Giraud, Anuj Grover, Julien Le Coz, Ivan Miro Panades, Jean-Philippe Noël, Bertrand Pelloux-Prayer, Philippe Roche, Olivier Thomas, Yvain Thonnart, David Turgis, Fabien Clermidy, Philippe Magarshack
2014 — conf
Impact of Random Telegraph Signals on 6T high-density SRAM in 28nm UTBB FD-SOI.
ESSDERC
Kaya Can Akyel, Lorenzo Ciampolini, Olivier Thomas, David Turgis, Gérard Ghibaudo
2013 — conf
Optimization of a voltage sense amplifier operating in ultra wide voltage range with back bias design techniques in 28nm UTBB FD-SOI technology.
ICICDT
Guillaume Moritz, Bastien Giraud, Jean-Philippe Noel, David Turgis, Anuj Grover
2012 — conf
Proposal of a new ultra low leakage 10T sub threshold SRAM bitcell.
ISOCC
Anis Feki, Bruno Allard, David Turgis, Jean-Christophe Lafont, Lorenzo Ciampolini