David Trémouilles

21 papers Journal 20Unranked 1
YearRankTypeTitle / Venue / Authors
2018 J jnl
A new electro-optical transmission-line measurement-method revealing a possible contribution of source and drain contact resistances to GaN HEMT dynamic on-resistance.
Microelectron. Reliab.
D. Hachem, David Trémouilles, Frederic Morancho, Gaëtan Toulon
2017 J jnl
Investigation on damaged planar-oxide of 1200 V SiC power MOSFETs in non-destructive short-circuit operation.
Microelectron. Reliab.
F. Boige, Frédéric Richardeau, David Trémouilles, Stéphane Lefebvre, G. Guibaud
2017 J jnl
New triggering-speed-characterization method for diode-triggered SCR using TLP.
Microelectron. Reliab.
Mouna Mahane, David Trémouilles, Marise Bafleur, Benjamin Thon, Marianne Diatta, Lionel Jaouen
2015 J jnl
Failure analysis of ESD-stressed SiC MESFET.
Microelectron. Reliab.
Tanguy Phulpin, David Trémouilles, Karine Isoird, Dominique Tournier, Philippe Godignon, Patrick Austin
2015 J jnl
Optimization of a MOS-IGBT-SCR ESD protection component in smart power SOI technology.
Microelectron. Reliab.
Houssam Arbess, Marise Bafleur, David Trémouilles, Moustafa Zerarka
2014 J jnl
Analysis of an ESD failure mechanism on a SiC MESFET.
Microelectron. Reliab.
Tanguy Phulpin, David Trémouilles, Karine Isoird, Dominique Tournier, Philippe Godignon, Patrick Austin
2013 J jnl
Building-up of system level ESD modeling: Impact of a decoupling capacitance on ESD propagation.
Microelectron. Reliab.
Nicolas Monnereau, Fabrice Caignet, David Trémouilles, Nicolas Nolhier, Marise Bafleur
2012 J jnl
An Accelerated Stress Test Method for Electrostatically Driven MEMS Devices.
IEEE Trans. Instrum. Meas.
Jinyu Jason Ruan, Nicolas Monnereau, David Trémouilles, Nicolas Mauran, Fabio Coccetti, Nicolas Nolhier, Robert Plana
2009 J jnl
A plug-and-play wideband RF circuit ESD protection methodology: T-diodes.
Microelectron. Reliab.
Dimitri Linten, Steven Thijs, Jonathan Borremans, Morin Dehan, David Trémouilles, Mirko Scholz, M. I. Natarajan, Piet Wambacq, Stefaan Decoutere, Guido Groeseneken
2009 J jnl
Accelerated lifetime test of RF-MEMS switches under ESD stress.
Microelectron. Reliab.
Jinyu Jason Ruan, Nicolas Nolhier, George J. Papaioannou, David Trémouilles, Vincent Puyal, C. Villeneuve, T. Idda, Fabio Coccetti, Robert Plana
2009 J jnl
Failure mechanisms of discrete protection device subjected to repetitive electrostatic discharges (ESD).
Microelectron. Reliab.
Marianne Diatta, Emilien Bouyssou, David Trémouilles, P. Martinez, F. Roqueta, O. Ory, Marise Bafleur
2007 J jnl
Transient voltage overshoot in TLP testing - Real or artifact?
Microelectron. Reliab.
David Trémouilles, Steven Thijs, Philippe Roussel, M. I. Natarajan, Vesselin K. Vassilev, Guido Groeseneken
2005 J jnl
Different Failure signatures of multiple TLP and HBM Stresses in an ESD robust protection structure.
Microelectron. Reliab.
Nicolas Guitard, Fabien Essely, David Trémouilles, Marise Bafleur, Nicolas Nolhier, Philippe Perdu, André Touboul, Vincent Pouget, Dean Lewis
2005 — conf
RF ESD protection strategies - the design and performance trade-off challenges.
CICC
Philippe Jansen, Steven Thijs, Dimitri Linten, M. I. Natarajan, Vesselin K. Vassilev, Mingxu Liu, Ann Concannon, David Trémouilles, Takeshi Nakaie, Masanori Sawada, Vladislav A. Vashchenko, Marcel ter Beek, Takumi Hasebe, Stefaan Decoutere, Guido Groeseneken
2004 J jnl
Latch-up ring design guidelines to improve electrostatic discharge (ESD) protection scheme efficiency.
IEEE J. Solid State Circuits
David Trémouilles, Marise Bafleur, Géraldine Bertrand, Nicolas Nolhier, Nicolas Mauran, Lionel Lescouzères
2004 J jnl
Low Frequency Noise Measurements for ESD Latent Defect Detection in High Reliability Applications.
Microelectron. Reliab.
Nicolas Guitard, David Trémouilles, Marise Bafleur, Laurent Escotte, Laurent Bary, Philippe Perdu, Gérard Sarrabayrouse, Nicolas Nolhier, Roberto Reyna-Rojas
2003 J jnl
Characterization of ESD induced defects using Photovoltaic Laser Stimulation (PLS).
Microelectron. Reliab.
Thomas Beauchêne, David Trémouilles, Dean Lewis, Philippe Perdu, Pascal Fouillat
2003 J jnl
TCAD and SPICE modeling help solve ESD protection issues in analog CMOS technology.
Microelectron. Reliab.
David Trémouilles, Géraldine Bertrand, Marise Bafleur, Felix Beaudoin, Philippe Perdu, Nicolas Guitard, Lionel Lescouzères
2003 J jnl
Thermal laser stimulation and NB-OBIC techniques applied to ESD defect localization.
Microelectron. Reliab.
Thomas Beauchêne, Dean Lewis, Felix Beaudoin, Vincent Pouget, Romain Desplats, Pascal Fouillat, Philippe Perdu, Marise Bafleur, David Trémouilles
2001 J jnl
Analysis and compact modeling of a vertical grounded-base n-p-n bipolar transistor used as ESD protection in a smart power technology.
IEEE J. Solid State Circuits
Géraldine Bertrand, Christelle Delage, Marise Bafleur, Nicolas Nolhier, Jean-Marie Dorkel, Quang Nguyen, Nicolas Mauran, David Trémouilles, Philippe Perdu
2001 J jnl
Backside Localization of Current Leakage Faults Using Thermal Laser Stimulation.
Microelectron. Reliab.
Romain Desplats, Felix Beaudoin, Philippe Perdu, Patrick Poirier, David Trémouilles, Marise Bafleur, Dean Lewis