David Lehninger

19 papers Journal 1Unranked 18

Year	Rank	Type	Title / Venue / Authors
2025	—	`conf`	Al-Doped HZO: A BEoL compatible Ferroelectric Material for Automotive-Grade Memory. IMW David Lehninger, Ayse Sünbül, Hannes Mähne, Thomas Kämpfe, Alison Viegas, Justine Barbot, Kerstin Bernert, Steffen Thiem, Konrad Seidel, Maximilian Lederer
2025	J	`jnl`	BEOL Ferroelectric Compute-in-Memory Ising Machine for Simulated Bifurcation. CoRR Yu Qian, Alptekin Vardar, Konrad Seidel, David Lehninger, Maximilian Lederer, Zhiguo Shi, Cheng Zhuo, Kai Ni, Thomas Kämpfe, Xunzhao Yin
2025	—	`conf`	Defect Dynamics and Flicker Noise in Ferroelectric Field Effect Transistors at Cryogenic Temperatures. IRPS Shouzhuo Yang, Yannick Raffel, Ricardo Olivo, Raik Hoffmann, David Lehninger, Oliver Ostien, Maik Simon, Konrad Seidel, Thomas Kämpfe, Maximilian Lederer, Gerald Gerlach
2025	—	`conf`	Enhanced Ferroelectricity in Hf ICICDT David Lehninger, Tianren Zhang, Peter Reinig, Justine Barbot, Mathieu Opprecht, Sébastien Kerdilès, Laurent Grenouillet, Konrad Seidel, Maximilian Lederer
2025	—	`conf`	Low-Power and Rail-To-Rail Strongarm Dl-Latch Comparator: Design, Analysis and Performance Evaluation. MOCAST Nandakishor Yadav, Konstantinos Efstathios Falidas, David Lehninger, Konrad Seidel, Thomas Kämpfe
2024	—	`conf`	Enhanced reliability and trapping behavior in ferroelectric FETs under cryogenic conditions. IMW Maximilian Lederer, Franz Müller, Raik Hoffmann, Ricardo Olivo, Yannick Raffel, Shouzhuo Yang, Sourav De, Roman Potjan, Oliver Ostien, Abdelrahman Altawil, Ayse Sünbül, David Lehninger, Thomas Kämpfe, Konrad Seidel
2024	—	`conf`	Ferroelectric FETs as Embedded NVRAM Supporting Cryogenic Quantum Processors. NVMTS Shouzhuo Yang, Yannick Raffel, Ricardo Olivo, Franz Müller, Raik Hoffmann, David Lehninger, Oliver Ostien, Maik Simon, Konrad Seidel, Thomas Kämpfe, Maximilian Lederer, Gerald Gerlach
2024	—	`conf`	Improved Endurance Reliability of Ferroelectric Hafnium Oxide-Based BEoL Integrated MFM Capacitors. IRPS Ayse Sünbül, David Lehninger, Raik Hoffmann, Hannes Mähne, Kerstin Bernert, Steffen Thiem, Thomas Kämpfe, Konrad Siedel, Maximilian Lederer, Lukas M. Eng
2024	—	`conf`	Improved Tunability of BEoL-integrated Hafnium Zirconium Oxide Varactors for mmWave Applications. DRC Sukhrob Abdulazhanov, Q. H. Le, David Lehninger, Ayse Sünbül, Thomas Kämpfe, Gerald Gerlach
2024	—	`conf`	Optimized Polarization and Reduced Imprint: Integrating Ferroelectric Aluminum Co-Doped (Hf, Zr)O2 Films and Superlattices into the BEoL for FeMFET and FRAM Application. NVMTS David Lehninger, Ayse Sünbül, Kerstin Bernert, Hannes Mähne, Shouzhuo Yang, Thomas Kämpfe, Justine Barbot, Steffen Thiem, Konrad Seidel, Maximilian Lederer
2023	—	`conf`	Ferroelectric HfO2/ZrO2 Superlattices with Improved Leakage at Bias and Temperature Stress. IMW David Lehninger, Ayse Sünbül, Ricardo Olivo, Thomas Kämpfe, Konrad Seidel, Maximilian Lederer
2023	—	`conf`	Hafnium oxide-based Ferroelectric Memories: Are we ready for Application? IMW Konrad Seidel, David Lehninger, Franz Müller, Yannick Raffel, Ayse Sünbül, Ricardo Revello, Raik Hoffmann, Sourav De, Thomas Kämpfe, Maximilian Lederer
2023	—	`conf`	Permittivity Characterization of Ferroelectric Thin-Film Hafnium Zirconium Oxide Varactors up to 170 GHz. DRC Sukhrob Abdulazhanov, Quang Huy Le, Dang Khoa Huynh, David Lehninger, Thomas Kämpfe, Gerald Gerlach
2022	—	`conf`	BEoL integrated hafnium zirconium oxide varactors for tunable mmWave applications. ESSDERC Sukhrob Abdulazhanov, Dang Khoa Huynh, Quang Huy Le, David Lehninger, Thomas Kämpfe, Gerald Gerlach
2022	—	`conf`	Impact of Temperature on Reliability of MFIS HZO-based Ferroelectric Tunnel Junctions. IRPS Ayse Sünbül, Tarek Ali, Raik Hoffmann, Ricardo Revello, Yannick Raffel, Pardeep Duhan, David Lehninger, Kati Kühnel, Matthias Rudolph, Sebastian Oehler, Philipp Schramm, Malte Czernohorsky, Konrad Seidel, Thomas Kämpfe, Lukas M. Eng
2022	—	`conf`	Integration of BEoL Compatible 1T1C FeFET Memory Into an Established CMOS Technology. IMW David Lehninger, Hannes Mähne, Tarek Ali, Raik Hoffmann, Ricardo Olivo, Maximilian Lederer, Konstantin Mertens, Thomas Kämpfe, Kati Biedermann, Matthias Landwehr, Andreas Heinig, Defu Wang, Yukai Shen, Kerstin Bernert, Steffen Thiem, Konrad Seidel
2022	—	`conf`	Memory Array Demonstration of fully integrated 1T-1C FeFET concept with separated ferroelectric MFM device in interconnect layer. VLSI Technology and Circuits Konrad Seidel, David Lehninger, Raik Hoffmann, Tarek Ali, Maximilian Lederer, Ricardo Revello, Konstantin Mertens, Kati Biedermann, Yukai Shen, Defu Wang, Matthias Landwehr, Andreas Heinig, Thomas Kämpfe, Hannes Mähne, Kerstin Bernert, Steffen Thiem
2022	—	`conf`	Study of Nanosecond Laser Annealing on Silicon Doped Hafnium Oxide Film Crystallization and Capacitor Reliability. IMW Tarek Ali, Ricardo Olivo, S. Kerdilès, David Lehninger, Maximilian Lederer, Sourav De, A.-S. Royet, Ayse Sünbül, A. Prabhu, Kati Kühnel, Malte Czernohorsky, M. Rudolph, Raik Hoffmann, Christelle Charpin-Nicolle, Laurent Grenouillet, Thomas Kämpfe, Konrad Seidel
2020	—	`conf`	Impact of Ferroelectric Wakeup on Reliability of Laminate based Si-doped Hafnium Oxide (HSO) FeFET Memory Cells. IRPS Tarek Ali, Kati Kühnel, Malte Czernohorsky, Matthias Rudolph, Björn Pätzold, Ricardo Olivo, David Lehninger, Konstantin Mertens, Franz Müller, Maximilian Lederer, Raik Hoffmann, Clemens Mart, Mahsa N. Kalkani, Philipp Steinke, Thomas Kämpfe, Johannes Müller, Jan Van Houdt, Konrad Seidel, Lukas M. Eng