David L. Harame

23 papers A* 2A 1Journal 13Unranked 7
YearRankTypeTitle / Venue / Authors
2018 — conf
Evolution and Optimization of BEOL MOM Capacitors Across Advanced CMOS Nodes.
ESSDERC
Jinglin Shi, A. Sidelnicov, Kok Wai J. Chew, Mei See Chin, C. Schippel, J. M. M. dos Santos, Frank Schlaphof, Lutz Meinshausen, John R. Long, David L. Harame
2018 — conf
RF FDSOI Technology and Modelling.
ESSCIRC
David L. Harame
2018 — conf
RF FDSOI Technology and modelling.
ESSDERC
David L. Harame
2016 J jnl
Analog Circuit Blocks for 80-GHz Bandwidth Frequency-Interleaved, Linear, Large-Swing Front-Ends.
IEEE J. Solid State Circuits
James Hoffman, Jean-Roland Martin-Gosse, Stefan Shopov, Jack J. Pekarik, Renata Camillo-Castillo, Vibhor Jain, David L. Harame, Sorin P. Voinigescu
2013 — conf
A 10Gb/s 6Vpp differential modulator driver in 0.18µm SiGe-BiCMOS.
ISSCC
Yi Zhao, Leonardo Vera, John R. Long, David L. Harame
2006 — conf
SiGe BiCMOS Trends - Today and Tomorrow.
CICC
James S. Dunn, David L. Harame, Alvin J. Joseph, Stephen A. St. Onge, Natalie B. Feilchenfeld, Louis D. Lanzerotti, Bradley A. Orner, Ephrem G. Gebreselasie, Jeffrey B. Johnson, Douglas D. Coolbaugh, Rick Rassel, Marwan Khater
2005 J jnl
Special Issue on Silicon Germanium - Advanced Technology, Modeling, and Design.
Proc. IEEE
Raminderpal Singh, David L. Harame, Bernard S. Meyerson
2005 J jnl
Status and Direction of Communication Technologies - SiGe BiCMOS and RFCMOS.
Proc. IEEE
Alvin J. Joseph, David L. Harame, Basanth Jagannathan, Douglas D. Coolbaugh, David C. Ahlgren, John Magerlein, Louis D. Lanzerotti, Natalie B. Feilchenfeld, Stephen A. St. Onge, James S. Dunn, Edward J. Nowak
2004 — conf
A 21-27GHz self-shielded 4-way power-combining PA balun.
CICC
Tak Shun Dickson Cheung, John R. Long, Youri Tretiakov, David L. Harame
2004 A conf
Demonstration of a SiGe RF LNA Design Using IBM Design Kits in 0.18um SiGe BiCMOS Technology.
DATE
Yiming Chen, Xiaojuen Yuan, David Scagnelli, James Mecke, Jeff Gross, David L. Harame
2003 J jnl
Design automation methodology and rf/analog modeling for rf CMOS and SiGe BiCMOS technologies.
IBM J. Res. Dev.
David L. Harame, Kim M. Newton, Raminderpal Singh, Susan L. Sweeney, Sue E. Strang, Jeffrey B. Johnson, Scott M. Parker, Carl E. Dickey, Mete Erturk, Greg J. Schulberg, Donald L. Jordan, David C. Sheridan, Michael P. Keene, John Boquet, Robert A. Groves, Mukesh Kumar, Dean A. Herman Jr., Bernard S. Meyerson
2003 J jnl
Foundation of rf CMOS and SiGe BiCMOS technologies.
IBM J. Res. Dev.
James S. Dunn, David C. Ahlgren, Douglas D. Coolbaugh, Natalie B. Feilchenfeld, Greg G. Freeman, David R. Greenberg, Robert A. Groves, Fernando J. Guarín, Youssef Hammad, Alvin J. Joseph, Louis D. Lanzerotti, Stephen A. St. Onge, Bradley A. Orner, Jae-Sung Rieh, Kenneth J. Stein, Steven H. Voldman, Ping-Chuan Wang, Michael J. Zierak, Seshadri Subbanna, David L. Harame, Dean A. Herman Jr., Bernard S. Meyerson
2003 A* conf
Mixed signals on mixed-signal: the right next technology.
DAC
Rob A. Rutenbar, David L. Harame, Kurt Johnson, Paul Kempf, Teresa H. Meng, Reza Rofougaran, James Spoto
2003 A* conf
On-chip interconnect-aware design and modeling methodology, based on high bandwidth transmission line devices.
DAC
David Goren, Michael Zelikson, Rachel Gordin, Israel A. Wagner, Anastasia Barger, Alon Amir, Betty Livshitz, Anatoly Sherman, Youri Tretiakov, Robert A. Groves, J. Park, Donald L. Jordan, Sue E. Strang, Raminderpal Singh, Carl E. Dickey, David L. Harame
2003 J jnl
Product applications and technology directions with SiGe BiCMOS.
IEEE J. Solid State Circuits
Alvin J. Joseph, James S. Dunn, Greg G. Freeman, David L. Harame, Douglas Coolbaugh, Robert A. Groves, Kenneth J. Stein, Rich Volant, Seshadri Subbanna, V. S. Marangos, Stephen St. Onge, Ebenezer Eshun, P. Cooper, Jeffrey B. Johnson, Jae-Sung Rieh, Basanth Jagannathan, Vidhya Ramachandran, David Ahlgren, Dawn Wang, X. Wang
2001 — conf
Silicon-germanium BiCMOS technology and a CAD environment for 2-40 GHz VLSI mixed-signal ICs.
CICC
Seshadri Subbanna, Lawrence Larson, Greg G. Freeman, David Ahlgren, Kenneth J. Stein, Carl E. Dickey, James Mecke, A. Rincon, P. Bacon, Robert A. Groves, Mehmet Soyuer, David L. Harame, James S. Dunn, David Rowe, W. Chon, Dean A. Herman Jr., Bernard S. Meyerson
2001 J jnl
Transistor noise in SiGe HBT RF technology.
IEEE J. Solid State Circuits
Guofu Niu, Zhenrong Jin, John D. Cressler, Rao Rapeta, Alvin J. Joseph, David L. Harame
1998 J jnl
A scaleable, statistical SPICE Gummel-Poon model for SiGe HBTs.
IEEE J. Solid State Circuits
K. M. Walter, B. Ebersman, D. A. Sunderland, G. D. Berg, Greg G. Freeman, Robert A. Groves, D. K. Jadus, David L. Harame
1997 J jnl
A scalable high-frequency noise model for bipolar transistors with application to optimal transistor sizing for low-noise amplifier design.
IEEE J. Solid State Circuits
Sorin P. Voinigescu, Michael C. Maliepaard, Jonathan L. Showell, Greg E. Babcock, David Marchesan, Michael Schröter, Peter Schvan, David L. Harame
1997 J jnl
An 11 GHz 3-V SiGe voltage controlled oscillator with integrated resonator.
IEEE J. Solid State Circuits
Mehmet Soyuer, Joachim N. Burghartz, Herschel A. Ainspan, Keith A. Jenkins, Peter Xiao, Arvin R. Shahani, Margaret S. Dolan, David L. Harame
1997 J jnl
Integrated RF components in a SiGe bipolar technology.
IEEE J. Solid State Circuits
Joachim N. Burghartz, Mehmet Soyuer, Keith A. Jenkins, Michael Kies, Margaret Dolan, Kenneth J. Stein, John Malinowski, David L. Harame
1997 J jnl
Temperature dependence of Q and inductance in spiral inductors fabricated in a silicon-germanium/BiCMOS technology.
IEEE J. Solid State Circuits
Robert A. Groves, David L. Harame, Dale Jadus
1996 J jnl
Low-frequency noise in UHV/CVD epitaxial Si and SiGe bipolar transistors.
IEEE J. Solid State Circuits
Lakshmi S. Vempati, John D. Cressler, Jeffrey Babcock, Richard C. Jaeger, David L. Harame