David Esseni

36 papers C 2Journal 14Unranked 20
YearRankTypeTitle / Venue / Authors
2025 J jnl
Multilevel Operation in Scaled Back-End-of-Line Ferroelectric FETs With a Metal Interlayer.
IEEE Access
Chiara Rossi, Daniel Lizzit, David Esseni
2025 — conf
Towards Energy-Efficient Adiabatic Circuits for Neuromorphic Tactile Sensing with E-Prop Learning.
ICONS
Simon F. Müller-Cleve, Alessandro Pasin, Mirko Loghi, Pirah Memon, David Esseni, Chiara Bartolozzi, Sergio Mg Solinas
2025 J jnl
Unified Memcapacitor-Memristor Memory for Synaptic Weights and Neuron Temporal Dynamics.
CoRR
Simone D'Agostino, Marco Massarotto, Tristan Torchet, Filippo Moro, Niccolo Castellani, Laurent Grenouillet, Yann Beilliard, David Esseni, Melika Payvand, Elisa Vianello
2024 J jnl
Reducing the spike rate of deep spiking neural networks based on time-encoding.
Neuromorph. Comput. Eng.
Riccardo Fontanini, Alessandro Pilotto, David Esseni, Mirko Loghi
2023 — conf
Adiabatic Spiking Neurons and Synapses for Ultra-Low Energy Neuromorphic Computing.
ICECS
Marco Massarotto, Stefano Saggini, Mirko Loghi, David Esseni
2023 J jnl
Modelling and Simulations of Ferroelectric Materials and Ferroelectric-Based Nanoelectronic Devices.
CoRR
David Esseni, Francesco Driussi, Daniel Lizzit, Marco Massarotto, Mattia Segatto
2023 J jnl
Multi-level Operation of FeFETs Memristors: the Crucial Role of Three Dimensional Effects.
CoRR
Daniel Lizzit, Thomas Bernardi, David Esseni
2023 — conf
Reducing the tunneling barrier thickness of bilayer ferroelectric tunnel junctions with metallic electrodes.
DRC
Suzanne Lancaster, Mattia Segatto, Cláudia Silva, Benjamin Max, Thomas Mikolajick, David Esseni, Francesco Driussi, Stefan Slesazeck
2022 — conf
Multi-level Operation of FeFETs Memristors: the Crucial Role of Three Dimensional Effects.
ESSDERC
Daniel Lizzit, Thomas Bernardi, David Esseni
2022 J jnl
Operation and Design of Ferroelectric FETs for a BEOL Compatible Device Implementation.
CoRR
Daniel Lizzit, David Esseni
2022 — conf
Polarization switching and AC small-signal capacitance in Ferroelectric Tunnel Junctions.
ESSDERC
Mattia Segatto, Marco Massarotto, Suzanne Lancaster, Quang T. Duong, Antonio Affanni, Riccardo Fontanini, Francesco Driussi, Daniel Lizzit, Thomas Mikolajick, Stefan Slesazeck, David Esseni
2022 — conf
Reducing the Spike Rate in Deep Spiking Neural Networks.
ICONS
Riccardo Fontanini, David Esseni, Mirko Loghi
2021 J jnl
Ferroelectric based FETs and synaptic devices for highly energy efficient computational technologies.
CoRR
David Esseni, Riccardo Fontanini, Daniel Lizzit, Marco Massarotto, Francesco Driussi, Mirko Loghi
2021 J jnl
Modelling and design of FTJs as high reading-impedance synaptic devices.
CoRR
Riccardo Fontanini, Marco Massarotto, Ruben Specogna, Francesco Driussi, Mirko Loghi, David Esseni
2021 — conf
Operation and Design of Ferroelectric FETs for a BEOL Compatible Device Implementation.
ESSDERC
Daniel Lizzit, David Esseni
2021 — conf
Polarization switching and interface charges in BEOL compatible Ferroelectric Tunnel Junctions.
ESSDERC
Riccardo Fontanini, Justine Barbot, Mattia Segatto, Suzanne Lancaster, Quang T. Duong, Francesco Driussi, Laurent Grenouillet, François Triozon, Jean Coignus, Thomas Mikolajick, Stefan Slesazeck, David Esseni
2016 — conf
Performance study of strained III-V materials for ultra-thin body transistor applications.
ESSDERC
Martin Rau, Troels Markussen, Enrico Caruso, David Esseni, Elena Gnani, Antonio Gnudi, Petr A. Khomyakov, Mathieu Luisier, Patrik Osgnach, Pierpaolo Palestri, Susanna Reggiani, Andreas Schenk, Luca Selmi, Kurt Stokbro
2016 — conf
Supersteep retrograde doping in ferroelectric MOSFETs for sub-60mV/dec subthreshold swing.
ESSDERC
Tommaso Rollo, David Esseni
2015 — conf
Improved surface roughness modeling and mobility projections in thin film MOSFETs.
ESSDERC
O. Badami, Enrico Caruso, Daniel Lizzit, David Esseni, Pierpaolo Palestri, Luca Selmi
2015 — conf
State-of-the-art semi-classical Monte Carlo method for carrier transport in nanoscale transistors.
MIPRO
Pierpaolo Palestri, Enrico Caruso, Francesco Driussi, David Esseni, Daniel Lizzit, Patrik Osgnach, Stefano Venica, Luca Selmi
2015 — conf
Strain engineering of single-layer MoS2.
ESSDERC
Manouchehr Hosseini, Mohammad Elahi, Ebrahim Asl Soleimani, Mahdi Pourfath, David Esseni
2014 — conf
Analysis of TFET based 6T SRAM cells implemented with state of the art silicon nanowires.
ESSDERC
Sebastiano Strangio, Pierpaolo Palestri, David Esseni, Luca Selmi, Felice Crupi
2014 — conf
Device-circuit co-design and comparison of ultra-low voltage Tunnel-FET and CMOS digital circuits.
NEWCAS
David Esseni, Massimo Alioto
2014 — conf
Performance and Impact of Process Variations in Tunnel-FET Ultra-Low Voltage Digital Circuits.
SBCCI
Massimo Alioto, David Esseni
2014 J jnl
Tunnel FETs for Ultra-Low Voltage Digital VLSI Circuits: Part II-Evaluation at Circuit Level and Design Perspectives.
IEEE Trans. Very Large Scale Integr. Syst.
Massimo Alioto, David Esseni
2014 J jnl
Tunnel FETs for Ultralow Voltage Digital VLSI Circuits: Part I - Device-Circuit Interaction and Evaluation at Device Level.
IEEE Trans. Very Large Scale Integr. Syst.
David Esseni, Manuel Guglielmini, Bernard Kapidani, Tommaso Rollo, Massimo Alioto
2012 — conf
A Multi-Subband Monte Carlo study of electron transport in strained SiGe n-type FinFETs.
ESSDERC
Daniel Lizzit, Pierpaolo Palestri, David Esseni, Francesco Conzatti, Luca Selmi
2012 J jnl
Mixed FBB/RBB: A Novel Low-Leakage Technique for FinFET Forced Stacks.
IEEE Trans. Very Large Scale Integr. Syst.
Davide Baccarin, David Esseni, Massimo Alioto
2011 C conf
A novel back-biasing low-leakage technique for FinFET forced stacks.
ISCAS
Davide Baccarin, David Esseni, Massimo Alioto
2010 J jnl
A numerical model for the oscillation frequency, the amplitude and the phase-noise of MOS-current-mode-logic ring oscillators.
Int. J. Circuit Theory Appl.
Michele Nocente, Donald Fontanelli, Pierpaolo Palestri, Roberto Nonis, David Esseni, Luca Selmi
2010 J jnl
Leakage-Delay Tradeoff in FinFET Logic Circuits: A Comparative Analysis With Bulk Technology.
IEEE Trans. Very Large Scale Integr. Syst.
Matteo Agostinelli, Massimo Alioto, David Esseni, Luca Selmi
2009 J jnl
Design of Ultra-Wideband Low-Noise Amplifiers in 45-nm CMOS Technology: Comparison Between Planar Bulk and SOI FinFET Devices.
IEEE Trans. Circuits Syst. I Regul. Pap.
Davide Ponton, Pierpaolo Palestri, David Esseni, Luca Selmi, Marc Tiebout, Bertrand Parvais, Domagoj Siprak, Gerhard Knoblinger
2008 — conf
Design and Evaluation of Mixed 3T-4T FinFET Stacks for Leakage Reduction.
PATMOS
Matteo Agostinelli, Massimo Alioto, David Esseni, Luca Selmi
2008 C conf
Design of UWB LNA in 45nm CMOS technology: Planar bulk vs. FinFET.
ISCAS
Davide Ponton, Pierpaolo Palestri, David Esseni, Luca Selmi, Marc Tiebout, Bertrand Parvais, Gerhard Knoblinger
2007 — conf
The Monte Carlo approach to transport modeling in deca-nanometer MOSFETs.
ESSCIRC
Enrico Sangiorgi, Pierpaolo Palestri, David Esseni, Claudio Fiegna, Luca Selmi
2001 — conf
Optimized programming of multilevel flash EEPROMs.
ICECS
Roberto Versari, David Esseni, Gianluca Falavigna, Massimo Lanzoni, Bruno Riccò