Daniel M. Fleetwood

20 papers Journal 12Unranked 8
YearRankTypeTitle / Venue / Authors
2024 — conf
Charge Trapping in Irradiated 3D Devices and ICs (Invited).
IRPS
En-xia Zhang, Shintaro Toguchi, Zi Xiang Guo, Michael L. Alles, Ronald D. Schrimpf, Daniel M. Fleetwood
2024 — conf
The Impact of Scaling on the Effects of Mixed-Mode Electrical Stress and Ionizing Radiation for 130-nm and 90-nm SiGe HBTs.
IRPS
Delgermaa Nergui, Mozhgan Hosseinzadeh, Y. A. Mensah, Harrison P. Lee, D. G. Sam, K. Li, E. X. Zhang, Daniel M. Fleetwood, John D. Cressler
2023 — conf
Radiation Effects in AlGaN/GaN HEMTs and Ga2O3 Diodes.
DRC
Daniel M. Fleetwood
2023 — conf
Single-Event Burnout by Cf-252 Irradiation in Vertical $\beta$-Ga2O3 Diodes with Pt and PtOx Schottky Contacts and High Permittivity Dielectric Field Plate.
DRC
Sajal Islam, Aditha S. Senarath, Arijit Sengupta, En-xia Zhang, Dennis R. Ball, Daniel M. Fleetwood, Ronald D. Schrimpf, Esmat Farzana, Arkka Bhattacharyya, Nolan S. Hendricks, James S. Speck
2021 — conf
Effects of Charge Generation and Trapping on the X-ray Response of Strained AlGaN/GaN HEMTs.
ASICON
Peng Wang, En-xia Zhang, Daniel M. Fleetwood, Peng Fei Wang, Michael W. McCurdy, Ji-Tzouh Lin, Michael L. Alles, Jim L. Davidson, Bruce W. Alphenaar, Ronald D. Schrimpf
2019 — conf
Reliability Limiting Defects in MOS Gate Oxides: Mechanisms and Modeling Implications.
IRPS
Daniel M. Fleetwood
2018 J jnl
Border traps and bias-temperature instabilities in MOS devices.
Microelectron. Reliab.
Daniel M. Fleetwood
2018 J jnl
The effect of ionization and displacement damage on minority carrier lifetime.
Microelectron. Reliab.
Jianqun Yang, Xingji Li, Chaoming Liu, Daniel M. Fleetwood
2015 — conf
Proton irradiation-induced traps causing VT instabilities and RF degradation in GaN HEMTs.
IRPS
A. Sasikumar, Z. Zhang, P. Kumar, En-xia Zhang, Daniel M. Fleetwood, Ronald D. Schrimpf, Paul Saunier, Cathy Lee, S. A. Ringel, Aaron R. Arehart
2014 J jnl
Total-ionizing-dose effects and reliability of carbon nanotube FET devices.
Microelectron. Reliab.
Cher Xuan Zhang, En-xia Zhang, Daniel M. Fleetwood, Michael L. Alles, Ronald D. Schrimpf, Chris Rutherglen, Kosmas Galatsis
2012 J jnl
The impact of device width on the variability of post-irradiation leakage currents in 90 and 65 nm CMOS technologies.
Microelectron. Reliab.
Nadia Rezzak, Pierre Maillard, Ronald D. Schrimpf, Michael L. Alles, Daniel M. Fleetwood, Yanfeng Albert Li
2011 J jnl
1/f Noise in GaN HEMTs grown under Ga-rich, N-rich, and NH
Microelectron. Reliab.
Tania Roy, Yevgeniy S. Puzyrev, En-xia Zhang, Sandeepan DasGupta, Sarah A. Francis, Daniel M. Fleetwood, Ronald D. Schrimpf, Umesh K. Mishra, Jim S. Speck, Sokrates T. Pantelides
2011 J jnl
High fluence 1.8 MeV proton irradiation effects on n-type MOS capacitors.
Microelectron. Reliab.
R. Arinero, En-xia Zhang, Nadia Rezzak, Ronald D. Schrimpf, Daniel M. Fleetwood, B. K. Choï, A. B. Hmelo, Julien Mekki, Antoine D. Touboul, Frédéric Saigné
2009 — conf
Performance, reliability, radiation effects, and aging issues in microelectronics - from atomic-scale physics to engineering-level modeling.
ESSCIRC
Sokrates T. Pantelides, L. Tsetseris, M. J. Beck, Sergey N. Rashkeev, G. Hadjisavvas, I. G. Batyrev, B. R. Tuttle, A. G. Marinopoulos, X. J. Zhou, Daniel M. Fleetwood, Ronald D. Schrimpf
2008 J jnl
Total ionizing dose effects in shallow trench isolation oxides.
Microelectron. Reliab.
Federico Faccio, Hugh J. Barnaby, Xiao J. Chen, Daniel M. Fleetwood, Laura Gonella, Michael L. McLain, Ronald D. Schrimpf
2007 J jnl
Effects of device aging on microelectronics radiation response and reliability.
Microelectron. Reliab.
Daniel M. Fleetwood, M. P. Rodgers, L. Tsetseris, X. J. Zhou, I. Batyrev, S. Wang, Ronald D. Schrimpf, Sokrates T. Pantelides
2007 J jnl
Hydrogen in MOSFETs - A primary agent of reliability issues.
Microelectron. Reliab.
Sokrates T. Pantelides, L. Tsetseris, Sergey N. Rashkeev, X. J. Zhou, Daniel M. Fleetwood, Ronald D. Schrimpf
2004 J jnl
Effects of radiation and charge trapping on the reliability of high-kappa gate dielectrics.
Microelectron. Reliab.
J. A. Felix, J. R. Schwank, Daniel M. Fleetwood, M. R. Shaneyfelt, Evgeni P. Gusev
2002 J jnl
Effects of hydrogen transport and reactions on microelectronics radiation response and reliability.
Microelectron. Reliab.
Daniel M. Fleetwood
2002 J jnl
Hydrogen-related reliability issues for advanced microelectronics.
Microelectron. Reliab.
Daniel M. Fleetwood