D. Nirmal

17 papers A 2Journal 15
YearRankTypeTitle / Venue / Authors
2025 J jnl
A Review of Performance and Reliability Issues in D Flip-Flops for Future Artificial Intelligence and Internet of Things Applications.
IET Circuits Devices Syst.
Syeda Hurmath Juveria, Shashank Rebelli, J. Ajayan, Amit Krishna Dwivedi, D. Nirmal
2024 J jnl
A Novel L
IEEE Access
B. Mounika, Asisa Kumar Panigrahy, J. Ajayan, N. Khadar Basha, Vakkalakula Bharath Sreenivasulu, M. Durga Prakash, Sandip Bhattacharya, D. Nirmal
2024 A conf
Enhancing Reliability and RF Performance: The Impact of Fe Doped Back Barrier Optimization in GaN HEMTs.
ICDCS
S. Angen Franklin, Binola K. Jebalin, Subhash Chander, D. Nirmal
2024 A conf
Parameter Extraction for Large Periphery Indigenous AlGaN/GaN HEMT Device.
ICDCS
Deepti Mongia, Subhash Chander, D. Nirmal
2024 J jnl
Revolutionizing Fe doped back barrier AlGaN/GaN HEMTs: Unveiling the remarkable 1700V breakdown voltage milestone.
Microelectron. J.
Binola K. Jebalin, S. Angen Franklin, G. Gifta, P. Prajoon, D. Nirmal
2023 J jnl
A comprehensive review of AlGaN/GaN High electron mobility transistors: Architectures and field plate techniques for high power/ high frequency applications.
Microelectron. J.
J. S. Raj Kumar, H. Victor Du John, Binola K. Jebalin, J. Ajayan, Angelin Delighta A, D. Nirmal
2023 J jnl
A new analytical modelling of 10 nm negative capacitance-double gate TFET with improved cross talk and miller effects in digital circuit applications.
Microelectron. J.
Adrija Mukherjee, Papiya Debnath, D. Nirmal, Manash Chanda
2023 J jnl
Investigation of variable field plate length in GaN HEMT on SiC substrate for MMIC applications.
Microelectron. J.
Binola K. Jebalin, G. Gifta, S. Angen, P. Prajoon, D. Nirmal
2023 J jnl
Investigation on effect of AlN barrier thickness and lateral scalability of Fe-doped recessed T-gate AlN/GaN/SiC HEMT with polarization-graded back barrier for future RF electronic applications.
Microelectron. J.
B. Mounika, J. Ajayan, Sandip Bhattacharya, D. Nirmal, V. Bharath Sreenivasulu, N. Aruna Kumari
2022 J jnl
Advances in neuromorphic devices for the hardware implementation of neuromorphic computing systems for future artificial intelligence applications: A critical review.
Microelectron. J.
J. Ajayan, D. Nirmal, Binola K. Jebalin, S. Sreejith
2022 J jnl
Analysis of nanoscale digital circuits using novel drain-gate underlap DMG hetero-dielectric TFET.
Microelectron. J.
D. Gracia, D. Nirmal, D. Jackuline Moni
2021 J jnl
Current collapse degradation in GaN High Electron Mobility Transistor by virtual gate.
Microelectron. J.
D. Godfrey, D. Nirmal, L. Arivazhagan, D. Godwinraj, N. Mohan Kumar, Yulin Chen, Wenkuan Yeh
2021 J jnl
Nanosheet field effect transistors-A next generation device to keep Moore's law alive: An intensive study.
Microelectron. J.
J. Ajayan, D. Nirmal, Shubham Tayal, Sandip Bhattacharya, L. Arivazhagan, A. S. Augustine Fletcher, P. Murugapandiyan, D. Ajitha
2019 J jnl
GaAs metamorphic high electron mobility transistors for future deep space-biomedical-millitary and communication system applications: A review.
Microelectron. J.
J. Ajayan, D. Nirmal, P. Mohankumar, Dheena Kuriyan, A. S. Augustine Fletcher, L. Arivazhagan, B. Santhosh Kumar
2015 J jnl
The influence of high-k passivation layer on breakdown voltage of Schottky AlGaN/GaN HEMTs.
Microelectron. J.
Binola K. Jebalin, A. Shobha Rekh, P. Prajoon, N. Mohankumar, D. Nirmal
2013 J jnl
Nanoscale channel engineered double gate MOSFET for mixed signal applications using high-k dielectric.
Int. J. Circuit Theory Appl.
D. Nirmal, P. Vijayakumar, K. Shruti, N. Mohankumar
2013 J jnl
Subthreshold performance of gate engineered FinFET devices and circuit with high-k dielectrics.
Microelectron. Reliab.
D. Nirmal, P. Vijayakumar, Divya Mary Thomas, Binola K. Jebalin, N. Mohankumar