Claudio Fiegna

15 papers C 1Journal 4Unranked 10
YearRankTypeTitle / Venue / Authors
2025 — conf
HTGB and DGS Reliability Assessment of e-mode GaN-HEMTs with Ferroelectric Gate Stack.
IRPS
Andrea Natale Tallarico, Maurizio Millesimo, U. Ibrar, Enrico Sangiorgi, Claudio Fiegna, T.-Y. Yang, J.-S. Wu, H. Iwai, E.-Y. Chang
2025 — conf
RTN Analysis of Schottky p-GaN Gate HEMTs Under Forward Gate Stress: Impact of Temperature.
IRPS
Maurizio Millesimo, Lorenzo Valentini, Claudio Fiegna, Enrico Sangiorgi, Andrea Natale Tallarico, Matteo Borga, Niels Posthuma, Stefaan Decoutere, Benoit Bakeroot
2024 — conf
Analysis of RTN Induced by Forward Gate Stress in GaN HEMTs with a Schottky p-GaN Gate.
IRPS
Maurizio Millesimo, Claudio Fiegna, Benoit Bakeroot, Matteo Borga, Niels Posthuma, Stefaan Decoutere, Enrico Sangiorgi, Andrea Natale Tallarico
2022 — conf
A novel approach to analyze the reliability of GaN power HEMTs operating in a DC-DC Buck converter.
ESSDERC
Giuseppe Capasso, Mauro Zanuccoli, Andrea Natale Tallarico, Claudio Fiegna
2022 — conf
Gate Reliability of p-GaN Power HEMTs Under Pulsed Stress Condition.
IRPS
Maurizio Millesimo, Benoit Bakeroot, Matteo Borga, Niels Posthuma, Stefaan Decoutere, Enrico Sangiorgi, Claudio Fiegna, Andrea Natale Tallarico
2020 — conf
Full Understanding of Hot Electrons and Hot/Cold Holes in the Degradation of p-channel Power LDMOS Transistors.
IRPS
Andrea Natale Tallarico, Susanna Reggiani, Riccardo Depetro, Giuseppe Croce, Enrico Sangiorgi, Claudio Fiegna
2019 — conf
Characterization and Modeling of BTI in SiC MOSFETs.
ESSDERC
Davide Cornigli, Andrea Natale Tallarico, Susanna Reggiani, Claudio Fiegna, Enrico Sangiorgi, Luis Sanchez, Carlos Valdivieso, Giuseppe Consentino, Felice Crupi
2019 — conf
Perimeter Driven Transport in the p-GaN Gate as a Limiting Factor for Gate Reliability.
IRPS
Steve Stoffels, Niels Posthuma, Stefaan Decoutere, Benoit Bakeroot, Andrea Natale Tallarico, Enrico Sangiorgi, Claudio Fiegna, J. Zheng, X. Ma, Matteo Borga, Elena Fabris, Matteo Meneghini, Enrico Zanoni, Gaudenzio Meneghesso, Juraj Priesol, Alexander Satka
2019 — conf
TCAD predictions of hot-electron injection in p-type LDMOS transistors.
ESSDERC
Federico Giuliano, Riccardo Depetro, Giuseppe Croce, Andrea Natale Tallarico, Susanna Reggiani, Antonio Gnudi, Enrico Sangiorgi, Claudio Fiegna, Mattia Rossetti, Antonio Molfese, Stefano Manzini
2018 J jnl
TCAD investigation on hot-electron injection in new-generation technologies.
Microelectron. Reliab.
Susanna Reggiani, Mattia Rossetti, Antonio Gnudi, Andrea Natale Tallarico, Antonio Molfese, Stefano Manzini, Riccardo Depetro, Giuseppe Croce, Enrico Sangiorgi, Claudio Fiegna
2017 J jnl
Investigation of the hot carrier degradation in power LDMOS transistors with customized thick oxide.
Microelectron. Reliab.
Andrea Natale Tallarico, Susanna Reggiani, Paolo Magnone, Giuseppe Croce, Riccardo Depetro, P. Gattari, Enrico Sangiorgi, Claudio Fiegna
2009 J jnl
Noise Reduction in CMOS Circuits Through Switched Gate and Forward Substrate Bias.
IEEE J. Solid State Circuits
Domagoj Siprak, Marc Tiebout, Nicola Zanolla, Peter Baumgartner, Claudio Fiegna
2007 — conf
The Monte Carlo approach to transport modeling in deca-nanometer MOSFETs.
ESSCIRC
Enrico Sangiorgi, Pierpaolo Palestri, David Esseni, Claudio Fiegna, Luca Selmi
2000 C conf
The effects of scaling on the performance of small-signal MOS amplifiers: a physics-based simulation study.
ISCAS
Claudio Fiegna
1990 J jnl
Latch-up testing in CMOS IC's.
IEEE J. Solid State Circuits
Roberto Menozzi, Massimo Lanzoni, Claudio Fiegna, Enrico Sangiorgi, Bruno Riccò